Patents Assigned to CVD Inc.
  • Silicide to silicon bonding process
    Patent number: 4737474
    Abstract: A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900.degree.-1000.degree. C. for ten minutes or less.
    Type: Grant
    Filed: November 17, 1986
    Date of Patent: April 12, 1988
    Assignee: Spectrum CVD, Inc.
    Inventors: J. B. Price, Yu C. Chow, John Mendonca, Schyi-Yi Wu
  • Plasma enhanced CVD
    Patent number: 4692343
    Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
    Type: Grant
    Filed: May 12, 1986
    Date of Patent: September 8, 1987
    Assignee: Spectrum CVD, Inc.
    Inventors: J. B. Price, Schyi-Yi Wu
  • CVD heat source
    Patent number: 4640224
    Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
    Type: Grant
    Filed: August 5, 1985
    Date of Patent: February 3, 1987
    Assignee: Spectrum CVD, Inc.
    Inventors: Matthew L. Bunch, J. B. Price, Robert W. Stitz
  • CVD plasma reactor
    Patent number: 4632057
    Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
    Type: Grant
    Filed: August 5, 1985
    Date of Patent: December 30, 1986
    Assignee: Spectrum CVD, Inc.
    Inventors: J. B. Price, Matthew L. Bunch, Robert W. Stitz
  • CVD heater control circuit
    Patent number: 4607591
    Abstract: Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
    Type: Grant
    Filed: August 6, 1985
    Date of Patent: August 26, 1986
    Assignee: Spectrum CVD, Inc.
    Inventor: Robert W. Stitz