Abstract: A CCD shift register includes a second gate electrode disposed adjacent to and longitudinally spaced from a first gate electrode, and a buried layer having a first dopant impurity concentration. The first gate electrode is disposed over the buried layer to define a first buried layer area. The second gate electrode is disposed over the buried layer to define a second buried layer area greater than the first buried layer area. In the buried layer, a trench region is formed to have a second dopant impurity concentration greater than the first dopant impurity concentration. The first gate electrode is disposed over the trench region to define a first trench area. The second gate electrode being disposed over the trench region to define a second trench area less than the first trench area. The first and second trench areas are dimensioned so that a first charge storage capacity is equal to or greater than a second charge storage capacity.

Abstract: A structure for a charge coupled device (CCD) to minimize effects of masking defects of a predetermined dimensional extent includes a plurality of sets of conductors, a plurality of strapping networks and a connection matrix of via contacts. Each set of the plurality of sets of conductors includes a plurality of parallel elongate first conductors oriented in a first direction and disposed substantially in a first plane, each first conductor being comprised of a first material and characterized by a first sheet resistance per square of conductor.

Abstract: A CCD shift register includes a first gate electrode, a second gate electrode disposed adjacent to and longitudinally spaced from the first gate electrode, and a buried layer having a first dopant impurity concentration. The first gate electrode is disposed over the buried layer so as to define a first buried layer area. The second gate electrode is disposed over the buried layer so as to define a second buried layer area greater than the first buried layer area. In the buried layer, a trench region is formed so as to have a second dopant impurity concentration greater than the first dopant impurity concentration. The first gate electrode is disposed over the trench region so as to define a first trench area. The second gate electrode being disposed over the trench region so as to define a second trench area less than the first trench area.

Abstract: A switched CCD electrode photodetector includes a substrate made of first semi-conductor type, a drain made of a second semi-conductor type formed in the substrate, a collection well made of the second semi-conductor type formed in the substrate, and a switched CCD electrode resistor formed between the drain and the collection well. The collection well is operable in cooperation with a photosensitive region. The switched CCD electrode resistor includes a channel region defined in the substrate and having a first end disposed adjacent to the collection well and a second end disposed adjacent to the drain. The switched CCD electrode resistor also includes a first electrode insulatively spaced from and disposed over the first end and a second electrode insulatively spaced from and disposed over the second end.

Abstract: The present invention is directed to methods and apparatus for accurately detecting light energy of a signal of interest (e.g., a laser pulse) even when the signal-to-noise ratio is relatively low. The present invention is further directed to accurate detection of a signal of interest even when either or both the signal of interest and background illumination vary across plural pixels of an imaging an array. For example, a signal of interest can be accurately detected even in the presence of pixel response non-uniformity and fixed pattern noise, or when the incident signal of interest is not confined laterally to a single pixel.

Abstract: The present invention is directed to providing a charge-coupled device which can provide accurate signal detection while providing high speed electronic exposure control or shuttering. Exemplary embodiments can maintain charge transfer efficiency at a relatively high level even if a pixel array of the charge-coupled device is clocked rapidly (i.e., exposure control or shuttering speed is increased) for a given pixel pitch.

Abstract: A dual mode high frequency output structure for a CCD image sensor has a differencing mode for determining a difference between a charge of successive charge packets of a first pulse train outputted from a shift register of the CCD image sensor and a non-differencing mode for outputting a video signal from the shift register of the CCD image sensor.

Abstract: A defect detection system includes a video camera with defect detection circuits for detecting defects in video signals being outputted by corresponding sections of an array sensor such as a TDI CCD two-dimensional array sensor. Each defect detection circuit includes a subtraction circuit for subtracting a prior stored pixel from an incoming pixel to generate a difference. Comparators compare the difference with positive and negative limits defining an acceptable range of difference values. The prior stored pixel is updated to the succeeding pixel only when the difference value is acceptable. Memories store the defect pixels from the respective detection circuits along with X-coordinates and end of line bits. The memories are sequentially read up to their end of line bits, and the defect pixel values along with coordinates expanded to include section indicating bits are transferred from the camera to further processing facilities.

Abstract: Silicon-germanium devices including MOSFETs, photogates and photodiodes, are produced by implanting the Si or polycrystalline silicon substrate with Ge.sup.+, to realize active SiGe regions within Si which are substantially free from defects, at an appropriate point in the fabrication by conventional techniques.

Abstract: A wide dynamic range photodetector comprising a photosensitive region for generating signal electrons in response to being illuminated, a collection region for storing the signal electrons generated within the photosensitive region, a shift register for receiving and outputing the signal electrons from the collection region, and a transfer gate intermediate the photosensitive region and the collection region for alternately facilitating transfer of the signal electrons from the photosensitive region for storage in the collection region, and isolating the photosensitive region from the collection region while the signal electrons are being output via the shift register.

Abstract: An electronically and mechanically expandable camera in which a tubular metal casing having removable front and back plates has a CCD image sensor mounted on a secondary front plate removably received within the casing for a direct thermal path to the casing. A driver board is removably receivable at a position between the secondary front plate and the back plate. A logic board is removably receivable at a position between the driver board and the back plate. The camera's functions may be expanded or altered by adding option electronic board modules between the logic board and the back plate of the camera, or by reconfiguring the logic board or by adding a different image sensor. All of the components within the camera, all of the enclosure elements and all of the mounting hardware used in the camera can be easily and conveniently changed as desired.

Abstract: An integrable photodetector element of large dynamic range includes a silicon substrate which has a resistivity of between 1 and 100 ohm-cm. The substrate is of one conductivity type. In the substrate there is an electrically floating photosensitive diffusion region and a second diffusion region that is spaced apart from the electrically floating region by means of a channel in the substrate. The two diffusion regions are of the same conductivity type and of opposite conductivity type to that of the substrate. A metal-insulator-semiconductor gate spans the substrate between the regions and over the channel. The gate is electrically connected to the electrically floating region, and the second region is reverse biased with respect to the substrate. Except for the photosensitive diffusion region, the element is shielded against penetration by visible light.