Patents Assigned to Diodes, Inc.
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Patent number: 10718491Abstract: A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof.Type: GrantFiled: July 16, 2019Date of Patent: July 21, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Paul Rudy, Melvin McLaurin, Troy Trottier, Steven DenBaars
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Patent number: 10720757Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.Type: GrantFiled: December 12, 2018Date of Patent: July 21, 2020Assignee: Soraa Lase Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Paul Rudy, Po Shan Hsu, Alexander Sztein
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Patent number: 10693279Abstract: In an example, the present invention provides a gallium and nitrogen containing structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers. The structure has a first handle substrate coupled to each of the substrates. The orientation of a reference crystal direction for each of the substrates are parallel to within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrates.Type: GrantFiled: August 29, 2019Date of Patent: June 23, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, James W. Raring
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Patent number: 10658810Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.Type: GrantFiled: November 26, 2018Date of Patent: May 19, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Alexander Sztein, Melvin McLaurin, Po Shan Hsu, James W. Raring
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Patent number: 10655800Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.Type: GrantFiled: February 21, 2019Date of Patent: May 19, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Eric Goutain, James W. Raring, Paul Rudy, Hua Huang
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Patent number: 10649086Abstract: The present disclosure provides a mobile machine including a laser diode based lighting system having an integrated package holding at least a gallium and nitrogen containing laser diode and a wavelength conversion member. The gallium and nitrogen containing laser diode is configured to emit a first laser beam with a first peak wavelength. The wavelength conversion member is configured to receive at least partially the first laser beam with the first peak wavelength to excite an emission with a second peak wavelength that is longer than the first peak wavelength and to generate the white light mixed with the second peak wavelength and the first peak wavelength. The mobile machine further includes a light detection and ranging (LIDAR) system configured to generate a second laser beam and manipulate the second laser beam to sense a spatial map of target objects in a remote distance.Type: GrantFiled: February 7, 2019Date of Patent: May 12, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Paul Rudy, Vlad Novotny
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Patent number: 10651629Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: January 21, 2019Date of Patent: May 12, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 10637210Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.Type: GrantFiled: March 18, 2019Date of Patent: April 28, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Christiane Poblenz Elsass
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Patent number: 10630050Abstract: A laser diode having a surface region configured on either a non-polar or semi-polar orientation. The laser diode also has N waveguide structures each overlying a different portion of the surface region. Each of the N waveguide structures is coupled to at least one immediately adjacent one of the N waveguide structures and extends in a different direction than immediately adjacent ones of the N waveguide structures.Type: GrantFiled: September 27, 2018Date of Patent: April 21, 2020Assignee: Soraa Laser Diode, Inc.Inventor: James W. Raring
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Patent number: 10627055Abstract: A method and device for emitting electromagnetic radiation at high power using a gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided.Type: GrantFiled: April 15, 2019Date of Patent: April 21, 2020Assignee: Soraa Laser Diode, Inc.Inventor: Eric Goutain
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Patent number: 10629689Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.Type: GrantFiled: June 11, 2018Date of Patent: April 21, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Melvin McLaurin, Alexander Sztein, Po Shan Hsu
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Patent number: 10587090Abstract: The present invention provides a device and method for a laser based light source using a combination of laser diode or waveguide gain element excitation source based on gallium and nitrogen containing materials and wavelength conversion phosphor materials designed for inherent safety. In this invention a violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials is closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, light source with closed loop design features to yield the light source as an eye safe light source.Type: GrantFiled: December 31, 2015Date of Patent: March 10, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Paul Rudy, Steve DenBaars, Troy Trottier
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Patent number: 10587097Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.Type: GrantFiled: July 25, 2018Date of Patent: March 10, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Paul Rudy, Chendong Bai
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Patent number: 10566767Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.Type: GrantFiled: November 14, 2016Date of Patent: February 18, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
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Patent number: 10566766Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.Type: GrantFiled: December 13, 2018Date of Patent: February 18, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass
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Patent number: 10559939Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.Type: GrantFiled: March 27, 2018Date of Patent: February 11, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Hua Huang, Phillip Skahan, Sang-Ho Oh, Ben Yonkee, Alexander Sztein, Qiyuan Wei
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Patent number: 10551728Abstract: A structured phosphor device includes a frame member comprising wall regions separating multiple openings of window regions. Further, the structured phosphor device includes a phosphor material filled in each of the multiple openings with a first surface thereof being exposed to an excitation light from one or more laser sources to generate an emitted light out of each window region. Additionally, the structured phosphor device includes an anti-reflective film overlying the first surface of the phosphor material. Furthermore, the structured phosphor device includes a substrate attached to a second surface of the phosphor material in each of the multiple openings. Alternatively, the structured phosphor device includes an array of phosphor pixels dividing a plate of single-crystalline or poly-crystalline phosphor material separated by optically reflective and thermally conductive walls. A dynamic lighting system based on the arrays of phosphor pixels for single or full color image projection is also disclosed.Type: GrantFiled: April 10, 2018Date of Patent: February 4, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Vlad Joseph Novotny, Troy Trottier, James W. Raring, Paul Rudy
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Patent number: 10522976Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.Type: GrantFiled: August 30, 2018Date of Patent: December 31, 2019Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, You-Da Lin, Christiane Elsass
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Patent number: 10511149Abstract: A gallium- and nitrogen-containing laser device including a facet with surface treatment to improve an optical beam is disclosed.Type: GrantFiled: October 8, 2018Date of Patent: December 17, 2019Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
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Patent number: 10505344Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescence mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.Type: GrantFiled: October 25, 2018Date of Patent: December 10, 2019Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang