Abstract: An electric-field-driving reflective display apparatus is provided. The electric-field-driving reflective display apparatus includes a barrier wall which has a plurality of driving grooves and first and second surfaces, a reflecting member which is disposed within the driving groove and has an electric charge, a first electrode which is disposed on the first surface of the barrier wall, and a second electrode which is disposed on the second surface of the barrier wall, wherein areas of cross sections of each driving groove parallel to the first and second surface are equal to each other.

Abstract: A photoresist polymer having a spiro cyclic ketal group, and a photoresist composition including the same is disclosed. The photoresist polymer and the photoresist composition can improve the resolution and the process margin due to its low activation energy of the deprotection reaction of the spiro cyclic ketal group, and can produce fine photoresist patterns due to its low PEB (Post Exposure Baking) temperature sensitivity.

Abstract: A conductive coating composition and a method for producing coating layer using the same are disclosed. The conductive coating composition is capable of forming an antistatic coating layer on the protective film surface of display device. The conductive coating composition includes: 1 to 30 wt % of polyethylene dioxythiophene aqueous-dispersed solution; 5 to 15 wt % of water-soluble binder resin; 0.2 to 10 wt % of melamine resin; 6 to 40 wt % of alcohol solvent; 5 to 30 wt % of organic solvent selected from the group consisting of dimethyl sulfoxide, propyleneglycol methylether, N-methylpyrrolidone, ethyl-3-ethoxypropionate, propyleneglycol monomethyletheracetate, butylcarbitol and the mixtures thereof; and 10 to 50 wt % of water. The method for producing the conductive coating layer includes the steps of coating the conductive coating composition on a substrate; and drying the coating composition.

Abstract: The invention provides photoresist resin compositions and in particular, a photoresist resin compositions comprising a) an acrylate monomer having two urethane bonds, b) a crosslinkable urethane monomer having at least two ethylene double bonds, c) an alkali-soluble compound, d) a photopolymerization initiator and e) a solvent, and a photoresist dry film resists using the photoresist resins. The photoresist resin compositions and the photoresist dry film resists using the same in accordance with the invention have excellent adhesion to a substrate and sandblast resistance and at the same time, they have high sensitivity as well as high resolution, thereby enabling fine pattern formation on substrates.

Abstract: A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has a repeating unit represented by wherein, R1 is hydrogen or methyl group, and R2 is a substituted or non-substituted alky group of C1 to C5. The composition for forming the organic anti-reflective coating layer includes the polymer having the repeating unit represented by above Formulas; a light absorber; and a solvent.

Abstract: Disclosed are a compound which works as electronic materials such as a molecular memory, a molecular switch, a molecular rectifier, a molecular wire, and so on, and a molecular electronic device including the same. The compound for molecular electronic device has the structure of following Formula 1, (MnRM)n??<Formula 1> wherein, R is a single molecule having an electrical conductivity, M is independently a repeating unit constituting a polymer having an electrical conductivity, and n is independently an integer ranging from 100 to 500.

Abstract: The present invention relates to a chemically amplified polymer having a pendent group with dicyclohexyl bonded thereto, a process for the preparation thereof, and a resist composition comprising it, and more particularly, to a novel (meth)acrylic or norbornene carboxylate compound with dicyclohexyl bonded thereto, a process for the preparation thereof, a chemically amplified polymer synthesized therewith, and a positive photoresist composition for ArF comprising said polymer, with high resolution and excellent etching resistance.

Abstract: The present invention relates to a photosensitive resin composition, and more particularly, to a photosensitive resin composition for forming an over coating layer of a color filter. The photosensitive resin composition according to the present invention includes a UV absorber. The photosensitive resin composition according to the present invention adjusts line width and height of a pattern without difficulty, forms a linear pattern, provides good transmittance and is adequate to form the over coating layer of the color filter.

Abstract: A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R is a substituted or non-substituted alky group of C1 to C5.

Abstract: A system and a method for controlling the multi-component composition such as photoresist, stripper, developer, etchant, thinner, rinser/cleaner and etch bead remover, for a lithography process, which is used for manufacturing a semiconductor device, a liquid crystal display device and so on, are disclosed.

Abstract: The present invention provides a Pb free Ag paste composition for a PDP address electrode comprising a) 60 to 90% by weight of an Ag powder; b) 1 to 10% by weight of a Pb free inorganic binder; c) 0.001 to 1% by weight of an inorganic thickener; and d) 5 to 38% by weight of an alkali-soluble, negative photoresist composition for fine conductive powder dispersion. The Pb free Ag paste composition according to the invention i) is environment-friendly by using a Pb free inorganic binder, ii) is suitable for the fabrication of fine electrodes by using the prior electrode formation processes, iii) can apply the formed pattern to low temperature sintering processes of not higher than 600° C., iv) does not use a surfactant and stabilizer and has excellent printing, leveling and sintering performances by using an inorganic thickener and conductive Ag powder, and v) enables sintering to be carried out at a sintering target temperature without binder burning off zone.

Abstract: A photosensitive polymer for forming high-resolution fine circuit patterns with an exposure light source of a short wavelength, and a chemically amplified photoresist composition including the polymer, are disclosed. The photosensitive polymer is represented by the following Formula 1, wherein R1 is a hydrogen atom, R2 is a hydrogen atom, R3 is a chlorine atom, a bromine atom, hydroxy, cyano, t-butoxy, CH2NH2, CONH2, CH?NH, CH(OH)NH2 or C(OH)?NH group, R4 is a hydrogen atom or methyl group, each of 1-x-y-z, x, y and z is a degree of polymerization of each repeating unit constituting the photosensitive polymer, x, y and z are 0.01 to 0.8, respectively, and n is 1 or 2.

Abstract: A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R is a substituted or non-substituted alky group of C1 to C5.

Abstract: The present invention provides an ink for a color filter comprising a polymer binder, a crosslinking monomer, a solvent, a pigment, and a polymerization initiator. The polymer binder comprises acrylate or methacrylate including a hydroxy group. The polymer binder may comprise 2-hydroxyethyl acrylate or 2-hydroxyethyl methacrylate.

Abstract: The present invention provides a photoresist composition and more particularly, a photoresist composition comprising a) a novolak resin, b) a diazide compound, and c) a solvent containing propylene glycol methyl ether acetate (PGMEA) and 2,2,4-triemthyl-1,3-penthanediolmonoisobutylate (TMPMB). The photoresist composition according to the invention has excellent coating uniformity and stain inhibitory properties after coating so that it can be easily applied to real industrial fields and it can improve working environments due to the reduction of amounts to be consumed, the decrease of time to be required for manufacture, etc. when manufactured on a large scale.

Abstract: The present invention relates to a photosensitive resin composition for use as a photoresist, and more particularly, to a photosensitive resin composition for a photoresist comprising an acrylate copolymer obtained by selectively using specific compounds or controlling the ratio of unreacted monomers, and a 1,2-quinonediazide compound, which is excellent in several performance factors such as dielectric characteristics, flatness, transparency, developing performance, residual film rate, chemical resistance, and heat resistance, as well as sensitivity and resolution, and in particular it facilitates easy pattern formation into interlayer dielectrics, and it can be used as a photoresist in an LCD manufacturing process due to its excellent transmissivity even when prepared as a thick film.

Abstract: A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.

Abstract: The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises (a) 10 to 40 wt. % of a water-soluble organic amine compound, (b) 40 to 70 wt. % of water-soluble organic solvents selected from a group consisting of dimethyl sulfoxide (DMSO), N-methyl pyrrolidone (NMP) dimethylacetamide (DMAc), dimethylformamide (DMF) and a mixture thereof, (c) 10 to 30 wt. % of water, (d) 5 to 15 wt. % of an organic phenol compound containing two or three hydroxyl groups, (e) 0.5 to 5 wt. % of anion type compound containing perfluoroalkyl, and (f) 0.01 to 1 wt. % of a polyoxyethylenealkylamine ether-type surfactant.

Abstract: Disclosed is a chemical mechanical polishing (CMP) slurry having a superior polishing efficiency as well as being capable of effectively converting a metal layer to be polished into a metal oxide layer. The CMP slurry composition includes an abrasive, an oxidizing agent, an iron-doped colloidal silica, and water. Preferably, the amount of the iron-doped colloidal silica is 0.0001 to 0.5 weight % with respect to the total CMP slurry composition, and the iron-doped colloidal silica is produced by reacting a silica salt with an iron salt in an aqueous solution state. The preferable amount of Si contained in the silica salt is 2 to 10 times of the amount of Fe contained in the iron salt by mole ratio.