Abstract: A photosensitive compound whose size is smaller than conventional polymer for photoresist, and which has well-defined (uniform) structure, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula 1. Also, the photoresist composition comprises 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 200 to 5000 weight parts of an organic solvent. In the formula 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, and R and R? are independently a chain type or a ring type of aliphatic or aromatic hydrocarbon group of 1 to 30 carbon atoms.

Abstract: This invention provides alignment materials for liquid crystal display device of vertical alignment mode and methods for the preparation of the same, and more particularly, it provides diaminobenzene derivatives represented by the following formula 1 (shown in description), capable of aligning liquid crystal in uniform and vertical way and remarkably improving clarity and solubility against organic solvents, methods for the preparation of the same and liquid crystal alignment films using the same.

Abstract: An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1. in Formula 1, R is C4˜C20 mono-cyclic or multi-cyclic saturated hydrocarbon, R1 is C1˜C10 linear hydrocarbon, C1˜C10 perfluoro compound or C5˜C20 aromatic compound, Ra and Rb are independently hydrogen atom or C1˜C4 saturated hydrocarbon and A is independently oxygen atom (O) or sulfur atom (S).

Abstract: This disclosure relates to novel organic dye and a method for preparing the same. The dye compound of the present invention, when used for a dye-sensitized solar cell (DSSC), shows improved molar absorption coefficient, Jsc (short circuit photocurrent density) and photoelectric transformation efficiency, compared to dyes of the prior art, thus largely improving solar cell efficiency, and it may be purified without expensive column thus remarkably lowering dye synthesis cost.

Abstract: The present invention relates to a photosensitive resin composition including a) an alkali-soluble acrylate resin, b) a cross-linking monomer having at least two ethylenic double bonds, and c) a phosphinoxide based photopolymerization initiator and an acridon based photopolymerization initiator; a preparation method thereof; and a dry film resist comprising the same.

Abstract: The present invention relates to a low melting point frit paste composition and a sealing method for an electric element using the same, and more particularly, to a low melting point frit paste composition which is sealable and appropriate for a flat panel, protects an element weak to heat and improves a process yield with good print properties, and a sealing method for an electric element using the same.

Abstract: Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition comprises: a non-ionized, heat-activated nano-catalyst which releases electrons and holes by energy generated in a chemical mechanical polishing process; an abrasive; and an oxidizing agent. The non-ionized, heat-activated nano-catalyst and the abrasive are different from each other, and the non-ionized, heat-activated nano-catalyst is preferably a semiconductor material which releases electrons and holes at a temperature of 10 to 100° C. in an aqueous solution state, more preferably a transition metal silicide selected from the group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi), mixtures thereof, and most preferably, a semiconductor material such as nano ferrosilicon.

Abstract: Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition comprises: a non-ionized, heat-activated nano-catalyst which releases electrons and holes by energy generated in a chemical mechanical polishing process; an abrasive; and an oxidizing agent. The non-ionized heat-activated nano-catalyst and the abrasive are different from each other, and the non-ionized, heat-activated nano-catalyst is preferably a semiconductor material which releases electrons and holes at a temperature of 10 to 100° C. in an aqueous solution state, more preferably a transition metal silicide selected from the group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi), mixtures thereof, and most preferably, a semiconductor material such as nano ferrosilicon.

Abstract: The present invention relates to a glass frit and a sealing method for an electric element using the same, and more particularly, to a glass frit which provides a good sealing effect to moisture and gas and is processable at low temperatures, and a sealing method for an electric element using the same.

Abstract: A system for testing a flat panel display having a flat display panel assembly includes a testing stage for arranging the flat display panel assembly, a measuring apparatus being disposed on the testing stage and for measuring a spectrum of a transmitted light passing through a measuring region of the flat display panel assembly from a light source, a transporting apparatus for moving the measuring apparatus at a constant acceleration on the testing stage, a defect informing apparatus being electrically connected to the measuring apparatus and for informing an existence of defect, a type of defect, and a severity of defect by processing an electrical signal of the spectrum transmitted from the measuring apparatus.

Abstract: Disclosed are a compound which works as electronic materials such as a molecular memory, a molecular switch, a molecular rectifier, a molecular wire, and so on, and a molecular electronic device including the same. The compound for molecular electronic device has the structure of following Formula 1, (MnRM)n??<Formula 1> wherein, R is a single molecule having an electrical conductivity, M is independently a repeating unit constituting a polymer having an electrical conductivity, and n is independently an integer ranging from 100 to 500.

Abstract: A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula. In Formula, R is hydrogen atom, C1˜C20 alkyl group, C1˜C10 alcohol group or epoxy group, R1 is independently hydrogen atom, n is an integer of 1-50, R2 is C1˜C20 alkyl group, C3˜C20 cycloalkyl group, C6˜C20 aryl group or C7˜C12 arylalkyl group, R3 is hydrogen atom, C1˜C10 alcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Abstract: A polymer for forming an organic anti-reflective coating layer, which is soluble in alkali solutions so that an additional etching process of anti-reflective coating layer is not required, and a composition including the same are disclosed. The polymer for forming an organic anti-reflective coating layer has the following formula. Wherein, R1 is a hydrogen atom (H) or a methyl group (—CH3), R2 is a sulfur atom (S) or an oxygen atom (O), R3 is a group containing 1 to 20 carbon atoms and a terminal hydroxyl group, R4 is an alkylene group or a cycloalkylene group, and if necessary, a hetero atom is contained therein, and a, b and c independently represent weight % of repeating units constituting the polymer, and are 1 to 98 weight %, 1 to 98 weight %, and 1 to 98 weight %, respectively.

Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

Abstract: The present invention relates to a photosensitive resin composition, particularly to a photosensitive resin composition for forming an interlayer organic insulating film for TFT-LCD, comprising 0.01 to 20 wt % of UV stabilizer or radical scavenger. The photosensitive resin composition of the present invention can be used for forming an interlayer organic insulating film for TFT-LCD to improve active unfilled area upon over exposure in liquid crystal photo-alignment process, can easily control resolution of pattern, and is particularly suitable for forming a planarization layer of an interlayer organic insulating film.

Abstract: The present invention relates to a photosensitive resin composition, and more particularly, to a photosensitive resin composition for forming an over coating layer of a color filter. The photosensitive resin composition according to the present invention includes a UV absorber. The photosensitive resin composition according to the present invention adjusts line width and height of a pattern without difficulty, forms a linear pattern, provides good transmittance and is adequate to form the over coating layer of the color filter.

Abstract: A photosensitive compound as a molecular resist whose size is smaller than conventional polymer for photoresist, and which can form a nano assembly, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula. Also, the present invention provides a photoresist composition comprising 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound. In the formula, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms.

Abstract: The present invention relates to an anthracene compound and an organic electroluminescent display device using the same. Particularly, the present invention relates to an anthracene compound which has good blue light emitting property, transports holes and electrons efficiently to enable an organic electroluminescent display device to have a low voltage, high brightness and long lifetime, and an organic electroluminescent display device using the same.

Abstract: Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1, wherein x is an integer of 1 to 5, y is an integer of 2 to 6, R is a C2˜C20 hydrocarbon group. The photoresist composition comprises 1˜85 weight % of a photo-sensitive compound represented by following Formula 1, 1˜55 weight % of a compound which reacts with a hydroxyl group (—OH) of the compound represented by Formula 1 to combine with the photo-sensitive compound represented by Formula 1; 1˜15 weight % of a photo-acid generator; and 12˜97 weight % of an organic solvent.

Abstract: The present invention relates to a ruthenium-type dye and a making method thereof, and more particularly, to a ruthenium-type dye which is used to manufacture a dye-sensitized solar cell, drastically improves a molar extinction coefficient to enhance efficiency of a solar cell with only a small amount of a dye and oxide semiconductor particles, allows a thin film solar cell element to be manufactured without difficulty and sharply reduces manufacturing costs of a solar cell, and a making method thereof.