Abstract: A powder for an underlayer of a coating-type magnetic recording medium, which powder comprises flat-acicular iron oxide particles having an average major axis length of 20–200 nm, a short axis cross-section taken perpendicularly to the long axis that has a long width and a short width, and a short axis cross-section ratio defined as the ratio of the long width to the short width that is greater than 1.3 and substantially uniform in the long axis direction, the powder having a specific surface area measured by the BET method of 30–100 m2/g. The underlayer powder preferably contains 0.1–5.0 wt % of P and, optionally, an amount of R(R representing one or more rare earth elements, defined as including Y) such that R/Fe expressed in atomic percentage (at. %) is 0.1–10 at. %.

Abstract: Copper particle clusters constituting a powder suitable for making a conductive paste are provided that are individually composed of not fewer than two and not more than 20 unit particles joined through neck portions. A conductive paste made from the powder is excellent in conductivity. A conductive filler for conductive paste is provided that consists essentially of a mixture of copper particle clusters A individually composed of two or more unit particles joined through neck portions and spherical metallic particles B of smaller diameter than the particles A. A conductive paste made from the filler is low in viscosity and excellent in conductivity.

Abstract: The present invention is to provide metal powder capable of decomposing and remedying various range of organic halogen compounds including organic halogen compounds which are difficult to be decomposed by a conventional decomposition and remediation method. Metal powder for decomposition of organic halogen is prepared in such a manner that the metal powder contains at least two kinds or more of metal elements, the respective metal elements forming phases, the respective metal elements therein serving as major constituents thereof, wherein difference in standard oxidation-reduction electric potential between any two kinds among the above-described metal elements is 778 mV or more in absolute value.

Abstract: The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same. An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.

Abstract: A silver oxide powder that replaces silver powder as a silver conductive paste filler has a specific surface area measured by the BET method is 1.0–25.0 m2/g, average primary particle diameter is 1–50 nm, and average secondary particle diameter is 1–1000 nm. The silver oxide powder is made by preparing a neutralization medium that is an aqueous solution containing one or both of sodium hydroxide and potassium hydroxide in a total amount of 0.5 mole/L or less, simultaneously adding an aqueous solution containing silver salt in an amount of 6.0 mole/L or less and an aqueous solution of at least one of sodium hydroxide and potassium hydroxide to the liquid medium to conduct a neutralization reaction, thereby obtaining a neutralized precipitate, maintaining the liquid at a pH in the range of 12±1.5 during the reaction, and subjecting the precipitate to filtration, washing, and drying.

Abstract: There is provided a method for producing a reliable metal/ceramic bonding substrate at low costs by forming a desired fillet on the peripheral portion of a metal circuit by a small number of steps. After an active metal containing brazing filler metal 12 is applied on a ceramic substrate 10 to bond a metal member 14 thereto, a resist 16 is applied on a predetermined portion of a surface of the metal member 14 to etch unnecessary portions, and then the resist is removed. Thereafter, unnecessary part of a metal layer 12b, which is formed of a metal other than an active metal of the active metal containing brazing filler metal 12, is etched with a chemical to be removed. Then, unnecessary part of an active metal layer 12a, which is formed of the active metal and a compound thereof, is selectively etched with a chemical, which inhibits the metal member 14 and the metal layer 12b from being etched and which selectively etch the active metal layer 12b, to form a metal circuit on the ceramic substrate 10.

Abstract: In a metal/ceramic bonding substrate 10 wherein a circuit forming metal plate 14 is bonded to one side of a ceramic substrate 12 and a radiating metal base plate 16 is bonded to the other side thereof, a difference in level is provided along the entire circumference of the bonding surface of the ceramic substrate 12 to the metal base plate 16. The difference in level is provided by forming at least one of a rising portion 16a and a groove portion 116b on and in the metal base plate 16.

Abstract: A substrate for film growth of group III nitride, a method of manufacturing the same, and a semiconductor device using the same are provided which can make an AlN thin film relatively thin without cloudiness, as well as cracks and pits are reduced in a group III nitride thin film layer constituting the device grown thereon. A substrate 10 for film growth of group III nitride is constituted which includes a substrate material 11 and an AlN thin film 12 formed on said substrate as a buffer layer, and a semiconductor device comprising group III nitride thin film is formed thereon, and the AlN thin film is formed at plural steps at least one of which changes film growth conditions during the film growth.

Abstract: Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.

Abstract: Heat dissipating plate (4) made of copper-base alloy is proposed that exhibits high degree of flatness after joining in the step of assembling power semiconductor modules, IC packages, etc., that will not crack in the solder (3) joint if subjected to heat cycles during joining or in an environment of use, and that has high heat conductivity and cost effectiveness. The heat dissipating plate (4) uses a copper-base alloy having a 0.2% yield strength of at least 300 N/mm2 which is characterized in that the 0.2% yield strength after heating at 400° C. for 10 minutes is at least 90% of the 0.2% yield strength before heating and that said copper-base alloy has a heat conductivity of at least 350 W/m·K and contains at least one element of the group consisting of Fe, Co and Ni plus P in a total amount of 0.01–0.3%; the heat dissipating plate (4) is 10–200 mm long on each side, 0.

Abstract: To provide a phosphor for an electron beam excitation with a small deterioration in an emission efficiency and capable of maintaining a high luminance, even when an excitation density of an electron beam for a phosphor excitation is increased. As raw materials, Ca3N2(2N), AlN(3N), Si3N4(3N), and Eu2O3(3N) are prepared, and the raw materials thus prepared are measured and mixed, so that a molar ratio of each element becomes (Ca+Eu):Al:Si=1:1:1. Then, the mixture thus obtained is maintained and fired for at 1500° C. for 3 hours, and thereafter crushed, to manufacture the phosphor having a composition formula Ca0.985SiAlN3:Eu0.015.

Abstract: To provide a manufacturing apparatus that is capable of manufacturing metal-ceramic composite members in various shapes with high productivity, and a mold member and a manufacturing method therefore. An apparatus for manufacturing a metal-ceramic composite member was made, the apparatus including: a plurality of process regions, namely, an atmosphere replacing/heating part 11, a molten metal push-out part 21, and a cooling part 31; and a guide 48 for allowing a mold to pass through these plural process regions, molds 60 having ceramic members 86 placed therein are successively inserted into a mold inlet 43 provided in this guide 48 to pass through the guide 48 practically in a shielded state from the atmosphere, a molten metal 53 is poured thereto in the molten-metal push-out part 21, and the molten metal 53 is cooled and solidified in the cooling part 31 to join a metal and a ceramic, thereby manufacturing the metal-ceramic composite member.

Abstract: A ferromagnetic iron alloy powder for a magnetic recording medium is composed of acicular iron-base particles of an average major axis length (X) of not less than 20 nm and not greater than 80 nm and have oxygen content of not less than 15 wt % and coercive force (Hc) of not less than [0.0036 X3?1.1 X2+110 X?1390 (Oe)] (where X is average major axis length expressed in nm). The ferromagnetic iron alloy powder is obtained by reacting metal powder composed of acicular iron-base particles having an average major axis length of not less than 20 nm and not greater than 80 nm with pure water in substantial absence of oxygen to form a metal oxide film on the particle surfaces. Optionally, the particles can be reacted with a weak oxidizing gas by a wet or dry method.

Abstract: In a method for producing an electronic part mounting substrate wherein a heat sinking metal base plate 12 is bonded to one side of a ceramic substrate 10, and one side of a circuit forming metal plate 14 is bonded to the other side thereof, an electronic part 16 being mounted on the other side of the circuit forming metal plate 14, the ceramic substrate 10 and the electronic part 16 are arranged in a mold so that the ceramic substrate 10 is spaced from the electronic part 16, and then, a molten metal is injected into the mold so that the molten metal contacts both sides of the ceramic substrate 10 and the electronic part 16.

Abstract: After a metal member of an alloy containing copper and nickel is arranged on at least one side of a ceramic substrate, the metal member and the ceramic substrate are heated in an atmosphere of an inert gas or in vacuo at a temperature between solidus and liquidus lines of the alloy to bond the metal member directly to the ceramic substrate.

Abstract: There are provided a method for producing a fine zirconium oxide powder which has a narrower particle size distribution than that of conventional zirconium oxide powders and which is capable of lowering the starting temperature in the sintering reaction of a reactant to which the fine zirconium oxide powder is added. When a hydrated zirconium is calcined to be dispersed in a solvent with a dispersing agent, an alcohol (e.g., IPA or t-butanol) having a branched chain structure, not a straight chain structure, is used as the solvent, and a dicarboxylic acid (e.g., maleic acid or oxalic acid) having two carboxyl groups in its molecule is used as the dispersing agent. Thus, a fine zirconium oxide powder having a narrow particle size distribution and a small particle size at 90 vol % is obtained.

Abstract: A phosphor, which has less reduction in emission efficiency and is capable of keeping high luminance even when density of an electron beam for exciting the phosphor increases, is provided. As raw materials, Ca3N2 (2N), AlN (3N), Si3N4 (3N), and Eu2O3 (3N) are prepared, and each of the raw materials is weighed so that a mole ratio of each element is, for example, (Ca+Eu):Al:Si=1:1:1, and mixed, then the mixture is held and fired at 1500° C. under the inert atmosphere for three hours, and thereafter ground to produce a phosphor having a composition formula of Ca0.985SiAlN3:Eu0.

Abstract: A manufacturing apparatus capable of manufacturing metal-ceramic composite members in various shapes with high productivity, and a mold member and a manufacturing method therefor. An apparatus for manufacturing a metal-ceramic composite member has a plurality of process regions, namely, an atmosphere replacing/heating part, a molten metal push-out part, and a cooling part; and a guide for allowing a mold to pass through these plural process regions. The molds have ceramic members placed therein and are successively inserted into a mold inlet provided in the guide to pass through the guide practically in a shielded state from the atmosphere. A molten metal is poured thereto in the molten-metal push-out part, and the molten metal is cooled and solidified in the cooling part to join a metal and a ceramic, thereby manufacturing the metal-ceramic composite member.

Abstract: To provide a phosphor having an emission spectrum with a broad peak in range from green color to red color, and having excellent emission efficiency and luminance. A phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (where element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator.), satisfying 2.5<(a+b)/m<4.5, 0<a/m<2.0, 2.0<b/m<4.0, 0<o/m<1.0, o<n, n=2/3 m+a+4/3b?2/3o.

Abstract: A metal layer 12 of aluminum or an aluminum alloy is formed on at least one side of a ceramic substrate 10, and a resist 14 having a predetermined shape is formed on the metal layer 12. Then, an etchant of a mixed solution prepared by mixing ferric chloride with water without adding any acids is used for etching and removing an undesired portion of the metal layer 12 to form a metal circuit 12 on the at least one side of the ceramic substrate 10.