Abstract: Plasma cathodes for micro Hall and ion thrusters of unprecedented power efficiency, low cost, compactness, are provided. The cathodes employ, for example, a very small planar scandate cathode as electron source, delivering over 350 ma of discharge from an emitter area as small as only 0.012 cm2.

Abstract: Plasma cathodes for micro Hall and ion thrusters of unprecedented power efficiency, low cost, compactness, are provided. The cathodes employ, for example, a very small planar scandate cathode as electron source, delivering over 350 ma of discharge from an emitter area as small as only 0.012 cm2.

Abstract: Irradiated material solids are thermally treated using a heat transfer liquid to improve the physical, chemical, mechanical and/or biochemical properties of the irradiated material solids.

Abstract: Irradiated material solids are thermally treated using a heat transfer liquid to improve the physical, chemical, mechanical and/or biochemical properties of the irradiated material solids.

Abstract: Provided is a microtomic system and process for the preparation of sections for microscope examination. A cutting edge in the system can cut through a sample block and produce a section one end of which remains attached to the cutting edge. A voltage generator can generate a voltage and apply the voltage between the cutting edge and a section receiver such as a semiconductor chip grid. Through electrostatic force caused by the voltage, another end of the section can anchor to the section receiver. The section is then spread on the receiver. The system is automatable, highly efficient, and does not need liquid to float sample sections, and can therefore maintain the integration of the sample sections.

Abstract: Provided is a process of using a microtomic system for the preparation of sections for microscope examination. A cutting edge in the system can cut through a sample block and produce a section one end of which remains attached to the cutting edge. A voltage generator can generate a voltage and apply the voltage between the cutting edge and a section receiver such as a semiconductor chip grid. Through electrostatic force caused by the voltage, another end of the section can anchor to the section receiver. The section is then spread on the receiver. The system is automatable, highly efficient, and does not need liquid to float sample sections, and can therefore maintain the integration of the sample sections.

Abstract: Provided is a process of using a microtomic system for the preparation of sections for microscope examination. A cutting edge in the system can cut through a sample block and produce a section one end of which remains attached to the cutting edge. A voltage generator can generate a voltage and apply the voltage between the cutting edge and a section receiver such as a semiconductor chip grid. Through electrostatic force caused by the voltage, another end of the section can anchor to the section receiver. The section is then spread on the receiver. The system is automatable, highly efficient, and does not need liquid to float sample sections, and can therefore maintain the integration of the sample sections.

Abstract: Provided is a microtomic system and process for the preparation of sections for microscope examination. A cutting edge in the system can cut through a sample block and produce a section one end of which remains attached to the cutting edge. A voltage generator can generate a voltage and apply the voltage between the cutting edge and a section receiver such as a semiconductor chip grid. Through electrostatic force caused by the voltage, another end of the section can anchor to the section receiver. The section is then spread on the receiver. The system is automatable, highly efficient, and does not need liquid to float sample sections, and can therefore maintain the integration of the sample sections.

Abstract: Provided is a microtomic system and process for the preparation of sections for microscope examination. A cutting edge in the system can cut through a sample block and produce a section one end of which remains attached to the cutting edge. A voltage generator can generate a voltage and apply the voltage between the cutting edge and a section receiver such as a semiconductor chip grid. Through electrostatic force caused by the voltage, another end of the section can anchor to the section receiver. The section is then spread on the receiver. The system is automatable, highly efficient, and does not need liquid to float sample sections, and can therefore maintain the integration of the sample sections.

Abstract: The invention is a thermal recycling system for converting lower quality thermal sources into higher quality thermal sources. In one embodiment, at least one photonic crystal radiator is combined with at least one substantially different radiator within a low loss thermal recycling cavity. Thermal recycling is based on the use of spectrum, polarization and temporal restrictions. These systems can be used in cooling, heating, and energy production.

Abstract: Bulk material solids are packaged in a shaped block and the packaged block is irradiated on two sides using high-energy electron beam radiation to uniformly irradiate the solids in the package.

Abstract: Bulk material solids are packaged in a shaped block and the packaged block is irradiated on two sides using high-energy electron beam radiation to uniformly irradiate the solids in the package.

Abstract: An optical element such as an interference filter will have adjacent layers of different indexes of refraction but formed of the same optical material. An optical element such as a diffraction grating or beam-splitter will have adjacent sections of different indexes of refraction in the same optical material layer. An optical element such as a waveguide will have a core layer of a higher index of refraction partially or completely surrounded by a cladding layer of a lower index of refraction formed of the same optical material.

Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Abstract: The exposure of selected optical materials to large area electron beam irradiation can raise the refractive index of the optical material to allow the fabrication of waveguides, optical fibers, gradient index lenses, interference filters, antireflection coatings, heat reflective thermal control coatings and other optical elements.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.