Abstract: A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.

Abstract: A heavy current mini connector. The connector has a power terminal assembly and a holder. The power terminal assembly includes a set of resilient contacting tabs. The power terminal assembly and a busbar conductive plate are inserted into each other. The power terminal assembly is conductively connected with a PCB and covered on its outer side with the holder made from steel. The set of resilient contacting tabs is located at the front portion of the power terminal assembly and in contact with the busbar conductive plate. The clamping plates, fastened to the base and provided in the front of the holder, are clamped to the two sides of the power terminal assembly. The base is located on the rear of the holder and is clamped onto the outside of the rear part of the power terminal assembly. The ventilation apertures are situated on the middle of the base.

Abstract: A Raman pump laser control apparatus comprises a wavelength division multiplexer, a tap coupler, a photoelectric detector, an analogue amplification processing circuit, an analogue-to-digital converter, a fast Raman pump control unit, an digital-analog converter, and a Raman pump laser. The fast Raman pump control unit, after having known anticipated output light power of the Raman pump laser, based on a direct relationship between a current anticipated output light power of the Raman pump laser and input digital quantity that is needed by the digital-analog converter, uses a feedforward control mechanism so that actual output light power of the Raman pump laser fastly approximates the anticipated output light power thereof, and then synchronously combines with a feedback control mechanism so that the actual output light power of the Raman pump laser is precisely locked on the anticipated output light power, thereby achieving fast and precise control of the Raman pump laser.

Abstract: A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. At least one of the plurality of surfaces can be configured to diffusively reflect at least 70% of the ultraviolet radiation and at least one of the plurality of surfaces can be configured to transmit at least 30% of the ultraviolet radiation and reflect at least 10% of the ultraviolet radiation.

Abstract: A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. A light generating structure formed over the n-type semiconductor contact layer has a set of quantum wells and barriers configured to emit or absorb target radiation. An ultraviolet transparent semiconductor layer having a non-uniform thickness is formed over the light generating structure. A p-type contact semiconductor layer having a non-uniform thickness is formed over the ultraviolet transparent semiconductor layer.

Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.

Abstract: A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.

Abstract: An imaging lens assembly includes an optical lens set including first, second and third optical lens elements that are arranged sequentially from an object side to an image side along an optical axis of the imaging lens assembly and that respectively have positive, negative and positive refractive powers, and a fixed aperture stop that is disposed between the object side and the first optical lens element. At least one of the object-side surface and the image-side surface of the second optical lens element is aspheric, and at least one of the object-side surface and the image-side surface of the second and third optical lens element has an inflection point.

Abstract: This invention defines management protocols for wireless power transfer to multiple devices in Multi-device Wireless Power Management System. Various functions of Multi-device Wireless Power Management System are justified from this invention. The WPT frames and messages which work between the management block of a charger and the management block or the coupler block of a device, or the coupler block of a charger are defined as well to execute various functions. Also the procedures for each functionality are described based on its frames and messages.

Abstract: Fabrication of a heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be epitaxially grown on a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

Abstract: A modulated light source includes a ring modulator, a first optical waveguide and a second optical waveguide that are optically connected to the ring modulator, and a third optical waveguide that optically connects an end of the first optical waveguide and an end of the second optical waveguide. At least part of the third optical waveguide has optical gain, and an optical waveguide loop including the ring modulator, the first optical waveguide, the second optical waveguide, and the third optical waveguide is used as a resonator to cause laser oscillation.

Abstract: A multi-layered contact to a semiconductor structure and a method of making is described. In one embodiment, the contact includes a discontinuous Chromium layer formed over the semiconductor structure. A discontinuous Titanium layer is formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some of the discontinuous sections of the Chromium layer. A discontinuous Aluminum layer is formed directly on the Chromium layer, wherein portions of the Aluminum layer extend into at least some of the discontinuous sections of the Titanium layer and the Chromium layer.

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Abstract: The present disclosure relates to piezoelectric compositions of Formula I comprising Lead Zirconate—Lead Titanate solid solution. The disclosure further relates to a method of obtaining said composition, method of preparing/fabricating piezoelectric component(s) and piezoelectric component(s)/article(s) obtained thereof. The piezoelectric composition and articles of the present disclosure show excellent electromechanical characteristics along with very large insulation resistance (IR).

Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

Abstract: A connector is provided and includes a housing and a terminal position assurance article. The housing has a body and a terminal receiving portion extending rearward from the body. The terminal position assurance article is wholly received into a rear end of the housing and corresponds with the terminal receiving portion.

Abstract: A method and a device is provided for a mobile communication terminal to control a smart TV to play a video file, wherein the mobile communication terminal establishes communication connections with the smart TV and an application server in advance.

Abstract: A solution for fabricating a device is described. The solution can include fabricating a heterostructure for the device, which includes at least one stress controlling layer. The stress controlling layer can include one or more attributes varies as a function of a lateral position based on a target variation of stresses in a semiconductor layer located directly under the stress controlling layer. Embodiments are further directed to a heterostructure including at least one stress controlling layer and a device including the heterostructure.

Abstract: A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.