Abstract: Disclosed is a method for acquiring program lists, including: receiving a program list request from a client; calculating out current-time programs of all channels, and arranging the current-time programs of all the channels into a current-time program list of all the channels; and sending the current-time program list of all the channels to the client, a current-time program of each channel being differentiated from the current-time program list of all the channels according to an ID of each channel and displayed by the client. The present invention also provides a device for acquiring program lists. Through the technical solution of the present invention, a conflict between the urgency for obtaining the current-time program and the time consumption for obtaining a complete program list is solved, the intensity of a session between the client and the server is reduced, and the pressure of the server is relieved.

Abstract: Disclosed is a method for remotely controlling customized channels, including: receiving a data source of a customized channel uploaded by a client; conducting automatic collation regularly and excluding an unqualified data source; storing a qualified data source, and forming a customized channel source; receiving a download and/or play request raised by the client; and providing the customized channel source to the client for a user to download and/or play. The present invention also discloses a device for remotely controlling customized channels. According to the method and the device for remotely controlling customized channels provided by the present invention, the qualified customized channel source is provided to the user, a channel database is expanded, and the special needs of the user are satisfied.

Abstract: A local processing apparatus and a data transceiving method thereof are provided. The local processing apparatus includes a communication module configured to transceive the data with the one or more distributed storage units, a memory configured to store a program for transceiving the data and the one or more key-value data pairs, and a processor configured to execute the program, the processor confirms whether a first key-value data exists in the memory by executing the program, and determines whether to prefetch one or more key-value data corresponding to the first key-value data based on the confirmation result.

Abstract: A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more semiconductor layers containing columnar nanostructures (e.g., nanowires). The nanowire semiconductor layer can include sub-layers of varying composition, at least one of which is an active layer that can include quantum wells and barriers. A heterostructure can include n-type and p-type semiconductor contact layers adjacent to the nanowire semiconductor layer containing the active layer.

Abstract: An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

Abstract: Provided is a method for determining network link quality between a master station and slave stations in a wireless network system having a synchronous superframe structure. The method for determining link quality in a wireless network system includes determining whether the current station is a master or a slave, when the current station is a master, comparing a time value during which the latest packets were received from slaves and a maximum time value during which the slaves are not obliged to exchange packets with the master after accessing a network, and determining link quality between the slaves and the master according to the comparison result.

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

Abstract: The present invention relates to a method for making 3D stereo digital broadcast service compatible in an MPEG-2-TS format which is used for transmitting and receiving digital TV. To this end, suggested is a method for transmitting detailed information which supports both TS-level multiplexing and ES-level multiplexing when left and right compressed bitstreams are multiplexed, when service compatibility is enabled.

Abstract: A first-etched and later-packaged three-dimensional system-in-package normal chip stack package structure and a processing method for manufacturing the same are provided. The structure includes: a die pad (1); a lead (2); a chip (4) provided on a top surface of the die pad (1) by a conductive or non-conductive adhesive material (3); a metal wire (5) via which a top surface of the chip (4) is connected to a top surface of the lead (2); a conductive pillar (6) provided on the surface of the lead (2); and a molding material (7).

Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.

Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.

Abstract: Provided is an etching-before-packaging three-dimensional system-level metal circuit board structure inversely provided with a chip. The structure comprises a metal substrate frame, wherein a base island and pins are arranged in the metal substrate frame; a chip is inversely arranged on a front face of the base island and the pins; a conductive pillar is arranged on a front face of the pins; the region on the periphery of the base island, the region between the base island and the pins, the region between one pin and another, the region above the base island and the pins, the region below the base island and the pins, and the outside of the chip and the conductive pillar are all enveloped with a plastic packaging material.

Abstract: A two-piece optical lens for capturing image and a two-piece optical module for capturing image are provided. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with positive refractive power; and a second lens with refractive power; and at least one of the image-side surface and object-side surface of each of the two lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: A solution for evaluating a sample gas for a presence of a trace gas, such as ozone, is provided. The solution uses an ultraviolet source and an ultraviolet detector mounted in a chamber. The chamber can include reflecting walls and/or structures configured to guide ultraviolet light. A computer system can operate the ultraviolet source in a high power pulse mode and acquire data corresponding to an intensity of the ultraviolet radiation detected by the ultraviolet detector while a sample gas is present in the chamber. Using the data, the computer system can determine a presence and/or an amount of the trace gas in the sample gas.

Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.

Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

Abstract: A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package.

Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.

Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.