Abstract: The present disclosure provides a parameter calibration importing method for importing calibration parameter into an UWB module, the parameter calibration importing method includes determining the calibration parameter according to requirements of the UWB module, storing the calibration parameters, and writing the corresponding calibration parameters into an UWB chip according to the identity information. Wherein the calibration parameter is associated with identity information of the UWB module.
Abstract: A method for preparing a double-sided microlens array, which is used to prepare a uniform, large-area and easy-to-control microlens array on upper and lower surfaces of a sapphire glass lens. A complete laser wavefront is spatially divided into many tiny parts, and each part is focused on the focal plane by a corresponding small lens, and the light spots are overlapped to achieve uniform light in a specific area. The sapphire glass lens is applied to the deep ultraviolet LED inorganic module packaging device to reduce the total reflection loss between the deep ultraviolet LED package optical window-air interface, and focus the light passing through the lens on the focal plane, while increasing the emission of light Coupling ability, uniform light intensity of ultraviolet LED.
Type:
Grant
Filed:
November 8, 2021
Date of Patent:
October 22, 2024
Assignees:
GUANGDONG UNIVERSITY OF TECHNOLOGY, Shenzhen Shuangma Xingguang Electronic Technology Co., Ltd.
Abstract: A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.
Abstract: Provided are a motor for an electric toothbrush and an electric toothbrush having the same. The motor includes a housing and at least one pair of rotor iron core groups fixed within the housing, wherein each rotor iron core group is formed by stacking a plurality of rotor iron cores, each of the plurality of rotor iron cores includes an iron core main body portion and an iron core convex portion protruding outwards from the periphery of the iron core main body portion; and at least one pair of rotor iron core groups are inserted into two axially extending iron core brackets, and the two iron core brackets are each provided with a clamping groove, with the clamping grooves having openings opposite to each other.
Abstract: The present application relates to the technical field of cables. Disclosed is a light-emitting flat cable structure with convenient assembly and high reliability, which includes a cable device and a light-emitting device. The cable device includes a flat cable and connectors at both ends thereof, and both ends of the light-emitting device are connected to the flat cable through fixing parts; the light-emitting device includes a light guide plate and a plurality of parallel arranged lamp strips, a plurality of light guide strips are arranged in the light guide plate, a plurality of light sources are arranged on each lamp strip, and each lamp strip penetrates through one light guide strip.
Abstract: The disclosure provides a preparation method of GaN field effect transistor based on diamond substrate, and relates to the technical field of semiconductor manufacturing. The method includes the following steps: preparing a GaN heterojunction layer on the front-side of a SiC substrate; thinning the SiC substrate; etching the SiC substrate; growing a diamond layer; removing a sacrificial layer and the diamond layer on the sacrificial layer; preparing a source electrode, a drain electrode and a gate electrode on the front surface of the GaN heterojunction layer; etching the SiC substrate and the GaN heterojunction layer to form a source through hole communicated with the source electrode; and removing the through hole mask layer, and preparing back grounding metal to complete the preparation of the diamond substrate GaN transistor device.
Type:
Grant
Filed:
April 25, 2022
Date of Patent:
October 8, 2024
Assignee:
The 13th Research Institute of China Electronics Technology Group Corporation