Abstract: The present disclosure relates to cubic boron nitride (cBN) cutting elements that have high cBN content and that are cuttable by electric discharge machining (EDM). A cutting element according to an embodiment includes a self-sintered polycrystalline cubic boron nitride (PCBN) compact, having a first phase of cubic boron nitride (cBN) particles and a ceramic binder phase with titanium compounds. The first phase occupies greater than 80% by volume of the self-sintered PCBN compact. The self-sintered PCBN compact has an electrical conductivity sufficient to be cuttable by electrical discharge machining.

Abstract: The present disclosure relates to cubic boron nitride (cBN) cutting elements that have high cBN content and that are cuttable by electric discharge machining (EDM). A cutting element according to an embodiment includes a self-sintered polycrystalline cubic boron nitride (PCBN) compact, having a first phase of cubic boron nitride (cBN) particles and a ceramic binder phase with titanium compounds. The first phase occupies greater than 80% by volume of the self-sintered PCBN compact. The self-sintered PCBN compact has an electrical conductivity sufficient to be cuttable by electrical discharge machining.

Abstract: A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.

Abstract: A cutter insert assembly for a drill bit for boring into the earth, comprising a super-hard structure clampable to a support body by means of a clamp mechanism; the clamp mechanism comprising opposed or opposable compression members connected or connectable by a tension member capable of sustaining a clamping force between the compression members when the cutter insert assembly is in a clamped condition, in which condition the compression members exert opposing compressive forces on the super-hard structure and the support body, operable to clamp the super-hard structure to the support body, and in which condition the cutter insert assembly is self-supporting and capable of being mounted onto a drill bit body.

Abstract: A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.

Abstract: A method for making a treated super-hard structure, the method including providing a super-hard structure comprising super-hard material selected from polycrystalline cubic boron nitride (PCBN) material or thermally stable polycrystalline diamond (PCD) material; subjecting the super-hard structure to heat treatment at a treatment temperature of greater than 700 degrees centigrade at a treatment pressure at which the super-hard material is not thermodynamically stable, for a treatment period of at least about 5 minutes to produce the treated super-hard structure.

Abstract: A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber (2); a substrate holder (4) disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration (12) for feeding microwaves from a microwave generator (8) into the plasma chamber; and a gas flow system (13,16) for feeding process gases into the plasma chamber and removing them therefrom, wherein the microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber comprises: an annular dielectric window (18) formed in one or several sections; a coaxial waveguide (14) having a central inner conductor (20) and an outer conductor (22) for feeding microwaves to the annular dielectric window; and a waveguide plate (24) comprising a plurality of apertures (28) disposed in an annular configuration with a plurality of arms

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.

Abstract: A method comprising: selecting a diamond material; irradiating the diamond material to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the diamond material is selected from the group consisting of: a HPHT diamond material having a total equivalent isolated nitrogen concentration in the range 1 to 600 ppm; a CVD diamond material having a total equivalent isolated nitrogen concentration in the range 0.005 to 100 ppm; and a natural diamond material having a total nitrogen concentration in the range 1 to 2000 ppm, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1×1014 to 1×1021 vacancies/cm?1.

Abstract: A method comprising: selecting a diamond material; irradiating the diamond material with neutrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises irradiating the diamond material with neutrons having an energy in the range 1.0 keV to 12 MeV, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1×1014 to 1×1020 vacancies/cm?3.

Abstract: A method comprising: selecting a diamond material; irradiating the diamond material with electrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1×1014 to 1×1022 vacancies/cm?3.

Abstract: The invention relates to a speaker dome comprising: a polycrystalline diamond dome body formed of a material of high stiffness with a Young's modulus greater than 50 GPa and having respective inner and outer surfaces; and a coating on at least one side of the dome body, wherein the coating comprises an optically refractive metal compound layer which is semi-transparent and which forms one or more colors via interference of reflected light from front and rear surfaces of the layer. The invention also relates to a diamond component comprising: a diamond body; and a coating on at least one side of the diamond body, wherein the coating comprises at least two layers including a first layer bonded to the at least one side of the diamond body and a second layer disposed over the first layer, the second layer being an optically refractive metal compound coating which is semi-transparent and which forms one or more colors via interference of reflected light from front and rear surfaces of the second layer.

Abstract: A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber (2); a substrate holder (4) disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration (12) for feeding microwaves from a microwave generator (8) into the plasma chamber; and a gas flow system (13,16) for feeding process gases into the plasma chamber and removing them therefrom, wherein the microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber comprises: an annular dielectric window (18) formed in one or several sections; a coaxial waveguide (14) having a central inner conductor (20) and an outer conductor (22) for feeding microwaves to the annular dielectric window; and a waveguide plate (24) comprising a plurality of apertures (28) disposed in an annular configuration with a plurality of arms

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized a

Abstract: A superhard element (22) for a machine tool, comprising polycrystalline cubic boron nitride (PCBN) material containing whiskers of a ceramic material, the PCBN material comprising at least about 50 volume percent cubic boron nitride (cBN) material dispersed in a binder matrix comprising a compound including titanium and the whiskers; the content of the whiskers being at least 1 weight percent and at most 6 weight percent of the binder matrix.

Abstract: A method of making a cutter structure comprising super-hard material defining a rake face topology is provided.

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is co

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized

Abstract: A method of making a construction for an indexable cutter insert, the method including providing a wafer (20) comprising ceramic material, the wafer (20) being substantially unsupported by a cemented carbide substrate and having a mean thickness of at most 2 mm; providing an insert base (30) having proximate and distal major ends (33, 34) connected by peripheral sides (36), the proximate end (33) of the insert base (30) being configured to have at least two corners (35) defined by junctions of the peripheral sides (36); the wafer (20) being configured to have at least two corners (25) corresponding to the two corners (35) of the proximate end (33) of the insert base (30); the method including bonding the wafer (20) to the proximate end (33) by means of a bond material, the corners (25) of the wafer (20) being disposed adjacent the corresponding corners (35) of the proximate end (33) to provide the construction.

Abstract: A tip for twist drill, comprising a super-hard structure joined to a substrate at an interface boundary coterminous with an end of the substrate, the super-hard structure comprising sintered polycrystalline material comprising super-hard grains, the super-hard structure defining a super-hard end surface opposite the interface boundary and a plurality of cutting edges configured for boring into a body in use; the super-hard end surface including a centre point or chisel edge, and comprising a plurality of surface regions configured such that respective planes tangential to each of the surface regions are disposed at substantially different angles from the axis of rotation of the tip in use. Precursor constructions for use in manufacturing the tips as well as methods for making the precursor constructions and the tips are disclosed.