Patents Assigned to ENI Technology, Inc.
  • Patent number: 6020636
    Abstract: A high-power high-voltage transistor has four or more semiconductor dies mounted in thermal contact on a metal flange. Each die has a flat lower surface with a drain (collector) region formed over at least 80 percent of its lower surface. A gate (base) region and a source (emitter) region are formed respectively on upper surfaces of the die. The drain region is seated in direct electrical and thermal contact with the flange, so that the flange serves as a drain lead for the transistor die. The die has a drain-source breakdown voltage or collector-emitter breakdown voltage) on the order of one kilovolt or higher and an area of one hundred thousand square mils or larger. Molybdenum tabs between the drain (collector) region and the flange protect the die from thermally-induced stresses. The dies can be MOSFET power transistors, bipolar junction transistors or other solid-state devices. An oval lead frame can be employed for connecting to the source regions.
    Type: Grant
    Filed: October 24, 1997
    Date of Patent: February 1, 2000
    Assignee: ENI Technologies, Inc.
    Inventor: Gary C. Adishian
  • Patent number: 5971591
    Abstract: Plasma process control arrangement controls a plasma generator that provides electrical power to a plasma chamber for an RF or DC plasma process. A sensor system detects operating parameters of the electrical power, including voltage and current levels. A process detection system (pds) controller has inputs coupled to the sensor system to receive the operating parameters, a programmable memory unit for storing a control program to compute an output control signal based on the operating parameters, and a control output coupled to a control input of the plasma generator. An external computer device, includes a monitor, an icon copying device for example, a mouse suitable for drag-and-drop operation, and a memory storing a suitable code-building program for generating a user-selected control program according to user-determined process requirements.
    Type: Grant
    Filed: October 20, 1997
    Date of Patent: October 26, 1999
    Assignee: ENI Technologies, Inc.
    Inventors: Daniel F. Vona, Kevin S. Gerrish, Kevin P. Nasman
  • Patent number: 5842154
    Abstract: A fuzzy logic control arrangement is provided for an impedance match network of the type that is typically employed between a source of RF power at a given impedance, e.g., 50 ohms, and a non-linear load whose impedance can vary in magnitude and phase, e.g., an RF plasma. The fuzzy logic controller fuzzifies the phase and the magnitude error signals. The error signals are applied to a fuzzy logic inference function based on a number of fuzzy sets. The values of the error signals enjoy some degree of membership in one or more fuzzy sets. Fuzzy logic rules are applied to the phase and magnitude error signals. In a defuzzification stage, drive signal values are obtained for moving the tuning elements of the variable impedances. The drive signal values are weighted according to respective fuzzy inference functions for which the error signals enjoy membership. Then the weighted drive signal values are combined to produce output drive signals.
    Type: Grant
    Filed: September 15, 1997
    Date of Patent: November 24, 1998
    Assignee: ENI Technologies, Inc.
    Inventor: Sean Harnett
  • Patent number: 5810982
    Abstract: Pulses of a positive voltage are superimposed onto negative dc sputtering current that is applied to the target of a dc sputtering process to create a reverse bias. This charges insulating deposits on the target to the reverse bias level, so that when negative sputtering voltage is reapplied to the target, the deposits will be preferentially sputtered away. The reverse bias pulses are provided at a low duty cycle, i.e., with a pulse width of 0.25 to 3 microseconds at a pulse rage of 40 to 200 KHz. This technique reduces or eliminates the sources for arcing. A circuit arrangement for reverse biasing provides the forward (negative) dc sputtering power as a current source, and provides the pulses of reverse (positive) voltage as a voltage source.
    Type: Grant
    Filed: September 30, 1996
    Date of Patent: September 22, 1998
    Assignee: ENI Technologies, Inc.
    Inventor: Jeff C. Sellers
  • Patent number: 5770922
    Abstract: An RF probe for a plasma chamber picks up current and voltage samples of the RF power applied to an RF plasma chamber, and the RF voltage and current waveforms are supplied to respective mixers. A local oscillator supplies both mixers with a local oscillator signal at the RF frequency plus or minus about 15 KHz, so that the mixers provide respective voltage and current baseband signals that are frequency shifted down to the audio range. The phase relation of the applied current and voltage is preserved in the baseband signals. These baseband signals are then applied to a stereo, two-channel A/D converter, which provides a serial digital signal to a digital signal processor or DSP. A local oscillator interface brings a feedback signal from the DSP to the local oscillator. The DSP can be suitably programmed to obtain complex Fast Fourier Transforms of the voltage and current baseband samples.
    Type: Grant
    Filed: July 22, 1996
    Date of Patent: June 23, 1998
    Assignee: ENI Technologies, Inc.
    Inventors: Kevin S. Gerrish, Daniel F. Vona, Jr.
  • Patent number: 5726603
    Abstract: A linear RF power amplifier employs push-pull pairs of high voltage mosfets. A minimum of transformers is employed, with an impedance matching transformer feeding an input balun supplying the input signal in push-pull to the gates of the mosfets. The drains are coupled to balanced legs of an output balun, followed by an output impedance matching transformer. Thermal sensors are employed for control of gate bias and also for control of drain voltage. The temperature sensors are mounted in the air inlet path and on the spreader plate of the heat sink. An aluminum or fiberglass strap is used to press the transistors against the spreader plate thereby ensuring good thermal contact with the transistor dies.
    Type: Grant
    Filed: February 14, 1997
    Date of Patent: March 10, 1998
    Assignee: ENI Technologies, Inc.
    Inventors: Yogendra K. Chawla, Leonid Reyzelman
  • Patent number: 5717293
    Abstract: A strike enhancement circuit for a dc power supply, which can be a switched half-bridge supply, creates a high voltage at high impedance to initiate a plasma in a plasma chamber or sputtering chamber. The strike circuit has a plurality of diode bridges that act as full-wave rectifiers or peak detectors. The transformer secondary of the power supply is connected through isolation capacitors to the ac inputs of each of the diode bridges. The dc ports of the diode bridges are stacked in series, and the combined, stacked voltage is applied across the input terminals of the plasma chamber. Each diode bridge also has a storage capacitor connected between the positive and negative dc ports. Positive and negative voltage peaks from the transformer secondary waveform are stored in the storage capacitors. The combined dc outputs applied to the plasma chamber appear as a voltage high enough to initiate a plasma discharge.
    Type: Grant
    Filed: February 24, 1997
    Date of Patent: February 10, 1998
    Assignee: ENI Technologies, Inc.
    Inventor: Jeff C. Sellers