Abstract: A laser marking device includes a laser emission unit configured to emit a laser beam to a first surface of an object to be processed, and a pressing unit configured to press a second surface that is opposite to the first surface of the object to be processed to make the first surface of the object to be flat. The pressing unit includes a first pressing portion configured to press an edge area of the second surface in a contact manner, and at least one second pressing portion configured to press a middle area of the second surface in a non-contact manner to maintain a separation distance from the second surface within a certain distance.

Abstract: Provided are a variable pulse width flat-top laser device and an operation method therefor. A variable pulse width flat-top laser device includes a light source unit including first and second laser light sources driven at different times to respectively emit pulse-type first and second laser beams, a beam shaping unit configured to shape the first and second laser beams emitted from the light source unit into flat-top laser beams, a combination/split unit located between the light source unit and the beam shaping unit, and including a first beam combination/split unit configured to combine optical paths of the first and second laser beams and split a combined optical path into at least two optical paths so that the split at least two optical paths are directed to different regions of an incident surface of the beam shaping unit, and an imaging optical system configured to time-sequentially overlay the flat-top laser beams shaped by the beam shaping unit on a target object to form an image.

Abstract: A method of operating an apparatus for laser annealing, includes reducing temporal or spatial coherency of a plurality of laser beams by beam superimposing; and reducing an electric field inner product magnitude of beams having the reduced temporal or spatial coherency by a fly eye lens array to reduce coherency, and/or by modifying a polarization state between the beams by beam superimposing.

Abstract: Provided is an adhesive removing device for removing an adhesive for adhering a mask and a pellicle from the mask. The adhesive removing device includes: a laser irradiating unit configured to irradiate a laser beam to an adhesive layer formed between the mask and the pellicle; a controller configured to control a wavelength, a waveform, and an energy density of the laser beam, so as to remove the adhesive layer through emission of the laser beam; and an imaging unit configured to monitor a region to which the laser beam is irradiated.

Abstract: An electrode manufacturing device for manufacturing an electrode includes: a first support unit having a plate shape extending along a plane and injecting a first pressurized fluid in a 1st-1st direction perpendicular to the plane; a second support unit having a plate shape extending along one plane, disposed to face the first support unit at a certain distance, and injecting a second pressurized fluid in a 1st-2nd direction opposite to the 1st-1st direction; a transfer unit configured to transfer an electrode having a sheet-shape in a direction of gravity and dispose a first area of the electrode between the first support unit and the second support unit; and a laser beam notching unit configured to notch and cut a portion of a second area of the electrode by irradiating a laser beam to the electrode in the 1st-1st direction.

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

Abstract: A warpage reduction device the present disclosure includes a jig having a warped shape capable of distributing stress of a workpiece, a light source heating the workpiece so as to be flat, a pressurizer applying pressure to the heated workpiece to be pressed against the jig so as to be deformed, a cooler cooling the deformed workpiece, and a controller controlling operations of the light source, the pressurizer, and the cooler.

Abstract: Disclosed are a laser annealing system and a method of fabricating a semiconductor device using the same. The laser annealing system having multiple laser devices may include a stage, on which a substrate is loaded, a light source generating a plurality of laser beams to be provided to the substrate, an optical delivery system disposed between the light source and the stage and used to deliver the laser beams, a homogenizing system disposed between the optical delivery system and the stage, the homogenizing system including an array lens including a plurality of lens cells which allow the laser beams to pass therethrough and homogenize the laser beams, and an imaging optical system disposed between the homogenizing system and the stage to image the laser beams on the substrate.

Abstract: A laser marking device includes a laser emission unit configured to emit a laser beam to a first surface of an object to be processed, and a pressing unit configured to press a second surface that is opposite to the first surface of the object to be processed to make the first surface of the object to be flat. The pressing unit includes a first pressing portion configured to press an edge area of the second surface in a contact manner, and at least one second pressing portion configured to press a middle area of the second surface in a non-contact manner to maintain a separation distance from the second surface within a certain distance.

Abstract: Provided is an apparatus and method for correcting a marking position, in which, by measuring and correcting a marking position by using a processing film for position correction, marking may be accurately performed on a position on a semiconductor chip during a marking operation, before a marking operation is performed on semiconductor chips provided on a wafer. The apparatus for correcting a marking position of a wafer includes a support configured to support a processing film for position correction, a laser head configured to emit a laser beam to the processing film for position correction to form a pattern, a vision camera configured to obtain pattern position information, a movable table configured to move the support in a horizontal direction, and a controller configured to compare and match the pattern position information and marking position information set in the laser head.

Abstract: A laser marking device includes a laser emission unit configured to emit a laser beam to a first surface of an object to be processed, and a pressing unit configured to press a second surface that is opposite to the first surface of the object to be processed to make the first surface of the object to be flat. The pressing unit includes a first pressing portion configured to press an edge area of the second surface in a contact manner, and at least one second pressing portion configured to press a middle area of the second surface in a non-contact manner to maintain a separation distance from the second surface within a certain distance.

Abstract: Provided is an automatic inspection device and method for inspecting processing quality of laser processing equipment that forms a modified area by irradiating a laser beam into an object to be processed. The automatic inspection device includes: an image film coated on a bottom surface of the object to be processed; an image sensing unit configured to detect a damage image of the object to be processed formed on the image film through irradiation of the laser beam; and an image processing unit configured to process the damage image detected by the image sensing unit.

Abstract: A laser marking device includes a laser emission unit configured to emit a laser beam to a first surface of an object to be processed, and a pressing unit configured to press a second surface that is opposite to the first surface of the object to be processed to make the first surface of the object to be flat. The pressing unit includes a first pressing portion configured to press an edge area of the second surface in a contact manner, and at least one second pressing portion configured to press a middle area of the second surface in a non-contact manner to maintain a separation distance from the second surface within a certain distance.

Abstract: A warpage reduction device the present disclosure includes a jig having a warped shape capable of distributing stress of a workpiece, a light source heating the workpiece so as to be flat, a pressurizer applying pressure to the heated workpiece to be pressed against the jig so as to be deformed, a cooler cooling the deformed workpiece, and a controller controlling operations of the light source, the pressurizer, and the cooler.

Abstract: Provided is an apparatus and method for correcting a marking position, in which, by measuring and correcting a marking position by using a processing film for position correction, marking may be accurately performed on a position on a semiconductor chip during a marking operation, before a marking operation is performed on semiconductor chips provided on a wafer. The apparatus for correcting a marking position of a wafer includes a support configured to support a processing film for position correction, a laser head configured to emit a laser beam to the processing film for position correction to form a pattern, a vision camera configured to obtain pattern position information, a movable table configured to move the support in a horizontal direction, and a controller configured to compare and match the pattern position information and marking position information set in the laser head.

Abstract: Disclosed is a wafer marking method using a laser for marking a wafer having processing tape attached thereto. The disclosed laser marking method comprises the steps of: penetrating a 532-nm wavelength laser beam through the processing tape attached to one side of the wafer; and performing marking on the one side of the wafer by moving the 532-nm wavelength laser beam at a predetermined velocity, wherein the 532-nm wavelength laser beam has a frequency of 8 kHz to 40 kHz, and an output power of 0.8 W to 2 W.

Abstract: Disclosed is a method for marking, by using a laser marker, a plurality of wafer dice divided by a wafer dicing process. The disclosed marking method for wafer dice comprises the steps of: setting a plurality of scan regions having a mutually overlapping portion on a wafer including the wafer dice; scanning the scan regions of the wafer a plurality of times by using a line scan camera; collecting position information of each of wafer dice located in regions in which the scan regions do not overlap; collecting, through image synthesis, position information of each of wafer dice located in regions in which the scan regions overlap; and marking, by using the laser marker, each of all the wafer dice of which the position information has been collected.

Abstract: The laser processing device includes: a measuring device configured to measure a change in a height of an object and including a first light source configured to emit probe light, a first light focusing unit configured to focus the probe light on the object, a light sensing unit configured to detect a change in the probe light reflected from a reflective surface of the object and including a Shack-Hartmann sensor, and a calculation unit configured to calculate the change in the height of the object by using the change in the reflected light detected by the light sensing unit; a second light source configured to emit laser light for processing to the object; and a focus adjusting device configured to adjust a focus of the laser light emitted to the object by using the change in the height of the object to be processed measured by the measuring device.

Abstract: The laser processing device includes: a measuring device configured to measure a change in a height of an object and including a first light source configured to emit probe light, a first light focusing unit configured to focus the probe light on the object, a light sensing unit configured to detect a change in the probe light reflected from a reflective surface of the object and including a Shack-Hartmann sensor, and a calculation unit configured to calculate the change in the height of the object by using the change in the reflected light detected by the light sensing unit; a second light source configured to emit laser light for processing to the object; and a focus adjusting device configured to adjust a focus of the laser light emitted to the object by using the change in the height of the object to be processed measured by the measuring device.