Abstract: Disclosed is a method for marking, by using a laser marker, a plurality of wafer dice divided by a wafer dicing process. The disclosed marking method for wafer dice comprises the steps of: setting a plurality of scan regions having a mutually overlapping portion on a wafer including the wafer dice; scanning the scan regions of the wafer a plurality of times by using a line scan camera; collecting position information of each of wafer dice located in regions in which the scan regions do not overlap; collecting, through image synthesis, position information of each of wafer dice located in regions in which the scan regions overlap; and marking, by using the laser marker, each of all the wafer dice of which the position information has been collected.

Abstract: The laser processing device includes: a measuring device configured to measure a change in a height of an object and including a first light source configured to emit probe light, a first light focusing unit configured to focus the probe light on the object, a light sensing unit configured to detect a change in the probe light reflected from a reflective surface of the object and including a Shack-Hartmann sensor, and a calculation unit configured to calculate the change in the height of the object by using the change in the reflected light detected by the light sensing unit; a second light source configured to emit laser light for processing to the object; and a focus adjusting device configured to adjust a focus of the laser light emitted to the object by using the change in the height of the object to be processed measured by the measuring device.

Abstract: Disclosed are a laser processing method for cutting a semiconductor wafer having a metal layer formed thereon and a laser processing device. The disclosed laser processing method transmits a plurality of laser beams, which propagate coaxially, to the semiconductor wafer, thereby forming focusing points in positions adjacent to a surface of the metal layer, which constitutes a boundary with the semiconductor wafer, and to one surface of the semiconductor wafer, respectively.

Abstract: Provided is an adhesive removing device for removing an adhesive for adhering a mask and a pellicle from the mask. The adhesive removing device includes: a laser irradiating unit configured to irradiate a laser beam to an adhesive layer formed between the mask and the pellicle; a controller configured to control a wavelength, a waveform, and an energy density of the laser beam, so as to remove the adhesive layer through emission of the laser beam; and an imaging unit configured to monitor a region to which the laser beam is irradiated.

Abstract: Provided is an automatic inspection device and method for inspecting processing quality of laser processing equipment that forms a modified area by irradiating a laser beam into an object to be processed. The automatic inspection device includes: an image film coated on a bottom surface of the object to be processed; an image sensing unit configured to detect a damage image of the object to be processed formed on the image film through irradiation of the laser beam; and an image processing unit configured to process the damage image detected by the image sensing unit.

Abstract: A laser welding apparatus includes a laser head for irradiating laser beams transferred through a plurality of transferring optical fibers to a processing target connected thereto via a connector, wherein the laser head includes an optical fiber block having an accommodating space for accommodating the plurality of transferring optical fibers to be arranged along a first direction, and an optical system disposed in front of the optical fiber block and irradiating the laser beams transferred through the plurality of transferring optical fibers to the processing target.

Abstract: Disclosed is a wafer marking method using a laser for marking a wafer having processing tape attached thereto. The disclosed laser marking method comprises the steps of: penetrating a 532-nm wavelength laser beam through the processing tape attached to one side of the wafer; and performing marking on the one side of the wafer by moving the 532-nm wavelength laser beam at a predetermined velocity, wherein the 532-nm wavelength laser beam has a frequency of 8 kHz to 40 kHz, and an output power of 0.8 W to 2 W.

Abstract: Disclosed is a method for marking, by using a laser marker, a plurality of wafer dice divided by a wafer dicing process. The disclosed marking method for wafer dice comprises the steps of: setting a plurality of scan regions having a mutually overlapping portion on a wafer including the wafer dice; scanning the scan regions of the wafer a plurality of times by using a line scan camera; collecting position information of each of wafer dice located in regions in which the scan regions do not overlap; collecting, through image synthesis, position information of each of wafer dice located in regions in which the scan regions overlap; and marking, by using the laser marker, each of all the wafer dice of which the position information has been collected.

Abstract: Disclosed are a laser processing method for cutting a semiconductor wafer having a metal layer formed thereon and a laser processing device. The disclosed laser processing method transmits a plurality of laser beams, which propagate coaxially, to the semiconductor wafer, thereby forming focusing points in positions adjacent to a surface of the metal layer, which constitutes a boundary with the semiconductor wafer, and to one surface of the semiconductor wafer, respectively.

Abstract: Disclosed are a laser processing apparatus and method that can effectively remove a low-k material formed on a wafer. A laser processing apparatus of the invention is a laser processing apparatus that processes a subject on which a low-k material is formed. The laser processing apparatus includes a laser generating unit that emits a laser beam; and an optical system that splits the laser beam emitted from the laser generating unit into two and irradiates the split laser beams onto the subject In this case, the optical system includes a pair of condensing lenses in which cut surfaces that are cut at a predetermined distance from central axes to be parallel to the central axes contact with each other, and the interval between the two split laser beams is the same as the interval between two edges of the low-k material in a removal subject region.

Abstract: Disclosed are a laser processing apparatus and method that can effectively remove a low-k material formed on a wafer. A laser processing apparatus of the invention is a laser processing apparatus that processes a subject on which a low-k material is formed. The laser processing apparatus includes a laser generating unit that emits a laser beam; and an optical system that splits the laser beam emitted from the laser generating unit into two and irradiates the split laser beams onto the subject In this case, the optical system includes a pair of condensing lenses in which cut surfaces that are cut at a predetermined distance from central axes to be parallel to the central axes contact with each other, and the interval between the two split laser beams is the same as the interval between two edges of the low-k material in a removal subject region.

Abstract: A method of multi-processing an object using a polygon mirror according to an embodiment of the invention includes setting processing parameters for individual layers of an object having a multilayer structure, performing laser processing on exposed layers in a region to be processed of the object according to the processing parameters using a polygon mirror, determining whether or not all of the layers of the object having a multilayer structure are processed, and if it is determined in the determining that not all of the layers are processed, progressing the performing of laser processing. Therefore, efficiency in processing the object can be increased, and cracks that occur in the object during laser processing using a polygon mirror can be minimized.

Abstract: Disclosed is a laser processing apparatus for minimizing generation of sludge and enhancing the processing efficiency while processing an object. The laser processing apparatus includes a beam irradiator for emitting a laser beam from a laser light source, a beam scanner for operating the laser beam emitted from the beam scanner, to be irradiated on a predetermined interval of a processing position of the object repeatedly on the straight, and a condensing lens for regulating a focus of the laser beam emitted from the beam irradiator. The object is movable at least once along a processing direction during processing the object. According to the present invention, it is able to improve the processing efficiency and to work an object with a uniform morphology by using a mask filtering a laser beam irradiated at a rotation turning point of a beam scanning mirror, capable of continuously irradiating a laser beam by deforming the laser beam into an elliptical pattern.

Abstract: Provided is a laser machining apparatus.

Abstract: A multi-laser system including a first laser oscillator for emitting a first laser beam, a second laser oscillator for emitting a second laser beam, a first scanner pair for receiving the first laser beam emitted by the first laser oscillator and deflecting the incident first laser beam to a desired location on a substrate to be processed, a second scanner pair for receiving the second laser beam emitted by the second laser oscillator and deflecting the incident second laser beam to a desired location on the substrate to be processed, and a scan lens for receiving laser beams that have been deflected from the first and second scanner pairs, focusing the received laser beams to spots having predetermined diameters so as to radiate the spots on the substrate.

Abstract: A multi-laser system including a first laser oscillator for emitting a first laser beam, a second laser oscillator for emitting a second laser beam, a first scanner pair for receiving the first laser beam emitted by the first laser oscillator and deflecting the incident first laser beam to a desired location on a substrate to be processed, a second scanner pair for receiving the second laser beam emitted by the second laser oscillator and deflecting the incident second laser beam to a desired location on the substrate to be processed, and a scan lens for receiving laser beams that have been deflected from the first and second scanner pairs, focusing the received laser beams to spots having predetermined diameters so as to radiate the spots on the substrate.

Abstract: Provided is a laser machining apparatus.

Abstract: A method of multi-processing an object using a polygon mirror according to an embodiment of the invention includes setting processing parameters for individual layers of an object having a multilayer structure, performing laser processing on exposed layers in a region to be processed of the object according to the processing parameters using a polygon mirror, determining whether or not all of the layers of the object having a multilayer structure are processed, and if it is determined in the determining that not all of the layers are processed, progressing the performing of laser processing. Therefore, efficiency in processing the object can be increased, and cracks that occur in the object during laser processing using a polygon mirror can be minimized.

Abstract: Provided is a method of forming a via hole using a laser beam. The method includes forming a first hole in the first metal layer by irradiating a laser beam having a predetermined frequency; reducing an energy density of the laser beam having the same frequency; and forming a second hole corresponding to the first hole in the dielectric layer by irradiating the laser beam having the same frequency.

Abstract: Disclosed is a laser processing apparatus and method for enhancing processing efficiency of an object by means of a polygon mirror. The laser processing apparatus includes a laser generator outputting a laser beam with a predetermined diameter, a polygon mirror rotating on an axis with plural reflection planes to reflect the laser beam incident on the reflection planes from the laser generator, in which the number of the reflection planes is set in order that the laser beam can cover at least two reflection planes of the polygon mirror, and a lens condensing and irradiating the laser beam reflected from the polygon mirror. According to the present invention, it is able to improve the processing efficiency and product yield of an object by dividing the laser beam into the plurality to be incident on the reflection planes of the polygon mirror and repeatedly processing the object in low energy by means of the divided laser beam.