Abstract: The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.

Abstract: A package includes a substrate, a first light-emitting unit, a second light-emitting unit, a light-transmitting layer, and a light-absorbing layer. The substrate has a first surface and an upper conductive layer on the first surface. The first light-emitting unit and the second light-emitting unit are disposed on the upper conductive layer. The first light-emitting unit has a first light-emitting surface and a first side wall. The second light-emitting unit has a second light-emitting surface and a second side wall. The light-transmitting layer is disposed on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit. The light-absorbing layer is disposed between the substrate and the light-transmitting layer, covers the upper conductive layer, the first side wall, and the second side wall, and exposes the first light-emitting surface and the second light-emitting surface.

Abstract: A light-emitting device includes a carrier with a first surface and a second surface opposite to the first surface; and a light-emitting unit disposed on the first surface and configured to emit a light toward but not passing through the first surface. When emitting the light, the light-emitting device has a first light intensity above the first surface, and a second light intensity under the second surface, a ratio of the first light intensity to the second light intensity is in a range of 2˜9.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: A voltage converter circuit, comprising: a bridge rectifier; a first transistor, having a first end, a second end and a third end; a second transistor, having a first end and a second end; wherein the first end of the first transistor and the first end of second transistor are electrically connected to bridge rectifier, and the second end of the first transistor is electrically connected to the first end of the second transistor; and a Zener diode, connected between the third end of the first transistor and the second end of the second transistor.

Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section vie

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure.

Abstract: An LED bulb with an LED assembly, including a substrate having a first top surface, longer side surface and shorter side surface; a mount disposed on the first top surface, having a first inner side surface and second inner side surface facing the first inner side surface; a plurality of LED chips on the first top surface, arranged between the first and second inner side surfaces, having a second top surface; an electrode plate formed on the mount, electrically connected to the plurality of LED chips with a third top surface which does not extend beyond the shorter side surface in a top view; and a phosphor layer covering the plurality of LED chips, mount, and electrode plate, without covering the side surfaces; and a cover covering the LED assembly. The third top surface is higher than the second top surface in an elevation based on the first top surface.

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

Abstract: A light-emitting device includes a substrate with light-emitting units. The light-emitting units include a first light-emitting unit, a second light-emitting unit, and one or more of third light-emitting units. Each of the light-emitting units includes a first semiconductor layer, an active layer and a second semiconductor layer. An insulating layer includes a first insulating layer opening and a second insulating layer opening formed on each of the light-emitting units. A first extension electrode covers the first light-emitting unit and the first extension electrode covers the first insulating layer opening on the first light-emitting unit. A second extension electrode covers the second light-emitting unit and the second extension electrode covers the second insulating layer opening on the second light-emitting unit. First and second electrode pads cover different parts of the light-emitting units.

Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.

Abstract: A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface.

Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

Abstract: A display includes a substrate with a plurality of electronic control elements, an array of light-emitting diodes having a semiconductor layer, a plurality of light emitting units disposed on the semiconductor layer, and a plurality of first electrodes disposed on the semiconductor layer, an bonding layer disposed between the substrate and the array of light-emitting diodes, and a plurality of wavelength conversion elements disposed on the semiconductor layer and spaced apart from each other. The plurality of wavelength conversion elements and the plurality of light emitting units are disposed at different sides of the semiconductor layer. The plurality of wavelength conversion elements is arranged in positions corresponding to the plurality of light-emitting units.

Abstract: A light-emitting device, includes: a semiconductor stack, including a top surface, wherein the top surface includes a first region and a second region which are coplanar; a current barrier layer formed on the first region, wherein the current barrier layer includes an insulating material; and a transparent conductive layer formed on the current barrier layer and the second region; and a first electrode formed on the transparent conductive layer; wherein the current barrier layer includes: an electrode region at a position corresponding to the first electrode, having a shape substantially the same as the first electrode; and a plurality of extension regions extending from the electrode region and not covered by the first electrode.

Abstract: A light-emitting device, includes: a substrate, comprising a top surface; a first edge and a second edge opposite to the first edge; a plurality of light-emitting units arranged in N rows on the substrate, wherein the N rows comprises a first row at the first edge and a Nth row at the second edge; and a plurality of connection electrodes, formed on and electrically connecting the plurality of light-emitting units; wherein the plurality of light-emitting units comprises a first light-emitting unit in the first row, and the first light-emitting unit comprises a first notch on the first edge wherein the first notch comprises a bottom composed by the top surface.

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions regularly formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions includes a first portion and a second portion formed on the first portion and the first portion is integrated with the base portion; and wherein the base portion includes a first material and the first portion includes the first material.