Abstract: A light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a trench formed between the first light-emitting unit and the second light-emitting unit, and exposing the substrate; and a connecting electrode including a first connecting part on the first light-emitting unit and connected to the first semiconductor layer of the first light-emitting unit, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

Abstract: A transferring chips method, including providing a plurality of chips on a first load-bearing structure; dividing the first load-bearing structure into a plurality of blocks, and each of the plurality of blocks including multiple chips of the plurality of chips; measuring a characteristic value of each of the plurality of chips; respectively calculating an average characteristic value of each of the plurality of blocks based on the characteristic values of the multiple chips of each of the plurality of blocks; and transferring the multiple chips of at least two blocks of the plurality of blocks with the average characteristic values within the same range to a second load-bearing structure.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

Abstract: A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

Abstract: A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

Abstract: This disclosure discloses a method of manufacturing a light-emitting device includes steps of providing a first substrate with a plurality of first light-emitting elements and adhesive units arranged thereon, providing a second substrate with a first group of second light-emitting elements and a second group of second light-emitting elements arranged thereon, and connecting the a second group of second light-emitting elements and the adhesive units. The first light-emitting elements and the first group of second light-emitting elements are partially or wholly overlapped with each other during connecting the second group of second light-emitting elements and the adhesive units.

Abstract: An applying method includes the following steps. Firstly, a conductive adhesive including a plurality of conductive particles and an insulating binder is provided. Then, a carrier plate is provided. Then, a patterned adhesive is formed on the carrier plate by the conductive adhesive, wherein the patterned adhesive includes a first transferring portion. Then, a manufacturing device including a needle is provided. Then, the needle of the manufacturing device is moved to contact the first transferring portion. Then, the transferring portion is transferred to a board by the manufacturing device.

Abstract: A light-emitting device comprises a flexible carrier having a plurality of segmentations, a light-emitting unit and a connecting wire. The flexible carrier has a carrier part and an extendable part. The light-emitting unit is set on the carrier part. The extendable part has a plurality of segmentations. The flexible carrier has a continuous common surface.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.

Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.