Abstract: A rotatable shaft supports and imparts rotary motion to a susceptor supporting spider to locate the susceptor and any substrate mounted thereon within a reaction chamber during a CVD process. The spider includes a plurality of radially extending arms having upwardly directed pegs for engaging cavities in the underside of the susceptor and a hub for interconnection with the rotatable shaft.

Abstract: A noncontacting displacement measuring system therefor a sensor (2) with a housing (11), at least one coil (1) accommodated in the sensor housing (11) and an embedding substance (13) for anchoring the coil (1), and further therefor an electronic supply/evaluation unit, is designed such that the influence of fluids and solids with a high dielectric constant on the measured values is large eliminated. To this end, a shield (15) is provided on the measuring side (8) of the sensor (2), which is at least largely impervious to electric field lines (9) emanating from the coil (1), but largely permeable to electromagnetic field lines emanating from the coil (1).

Abstract: A method for monitoring mechanical power transmission systems is disclosed, wherein the power transmission system includes at least one power transmitting element, and which is characterized for a reliable and simple measurement of elongations on the power transmitting element by the following steps: First two substantially parallel planes are established on the unstressed power transmitting element, each plane being defined by at least three space coordinates or respectively measuring points on the power transmitting element. Then, the relative change in position of the two planes to one another is determined on the stressed power transmitting element. Finally, the determined relative change in position of the planes is correlated with the local elongation or compression on the power transmitting element. An apparatus for carrying out the method is likewise described.

Abstract: An improved reaction chamber for use in an epitaxial deposition process or processing a single wafer-at-a-time. The reaction chamber includes a cold-wall reactor having a substantially rectangular cross-section. The cross-sectional area of the reactant chamber is substantially reduced to increase the efficiency of the system. Wall deposits are restricted to those which can be readily gas-etched array at various stages of the deposition process by the use of a cooling chamber or plenum about at least the downstream portion of the reactor. Apparatus is provided to maintain the wall temperature within a predetermined range for insuring that only readily cleanable deposits are formed. The reduced cross-sectional area results in insufficient room to mount a susceptor. Therefore, the susceptor assembly is mounted within a well distending vertically downward from the bottom of the chamber or within a second portion of a duel height chamber having a greater cross-sectional area.

Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single water-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.

Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.

Abstract: A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.

Abstract: A hollow drive shaft mounted within a tubular shaft depending from a reaction chamber supports a substrate receiving susceptor to effect rotation of the susceptor.

Abstract: Mode converting signal launchers for efficient coupling signals between dielectric insular and image waveguides and TEM mode transmission lines. The launcher includes a conductive ground plane and an elongated high permittivity dielectric waveguide adjacent to the ground plane. A TEM mode transmission line provides an elongated conductive strip fixed adjacent to the dielectric waveguide such that a coupling region is formed having a length of at least two times the wavelength in the dielectric waveguide.

Abstract: An epitaxial deposition method for processing a single wafer and a reaction chamber for conducting the method. The chamber has a substantially rectangular cross section reduced for increased system efficiency. Because the reduced cross section has insufficient room for a susceptor, the susceptor, in one embodiment, is mounted within a second portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable deposits beneath the susceptor from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor are controlled, for example, by a quartz plate which narrows and simultaneously shapes the gap between the susceptor and the input end of the chamber. Two types of reactant gas injectors can be used for controlling the velocity profile of injected gases.

Abstract: Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.

Abstract: Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick up the wafer while bathing the wafer in radially outflowing gases to prevent intrusion and deposition on the wafer of particulate matter in suspension.

Abstract: Apparatus for processing a single wafer and a reaction chamber for conducting an epitaxial deposition process therein. The chamber has a substantially rectangular cross section reduced for increased system efficiency. Because the reduced cross section has insufficient room for a susceptor, the susceptor, in one embodiment, is mounted within a second portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable deposits beneath the susceptor from reactant gas. The velocity profile and flow of reactant gas beneath the susceptor are controlled, for example, by a quartz plate which narrows and simultaneously shapes the gap between the susceptor and the input end of the chamber.

Abstract: A substrate loading subsystem receives substrates from an external source and delivers them to an input port. A substrate pickup transports the substrates serially from the input port to a delivery port of a processing subsystem wherein the substrates are subjected to a reactant gas in a reaction chamber. After completion of the chemical vapor deposition, the substrate pick up serially transports the substrates to an outlet port wherefrom they are off loaded.

Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.

Abstract: A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.

Abstract: A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in horizontal flow for depositing materials on a substrate which is supported in a reaction chamber on a susceptor which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly, a lower heating element assembly and a heat concentrator mechanism whic interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processing cycle.

Abstract: A roll coin dispenser is extremely narrow and occupies a vacant space between adjacent slot machines. The dispenser changes paper bills into coinage. Loading and access to all internal components of the changer are through the front of an enclosing cabinet which is unobstructed by adjacent slot machines. A coin storage section of the changer includes a multi-cartridge loading and dispensing mechanism in order to permit fast and accurate reloading of the machine by someone who is physically capable of lifting only small weights.

Abstract: The present invention relates to a high throughput single crystal epitaxial deposition process which achieves increased uniformity, both wafer to wafer and across the wafer surface. There is provided an epitaxial deposition process characterized by low-level cooling periods which minimize temperature changes between deposition cycles and inter-cycle cleaning so that each new wafer is presented with a substantially equivalent deposition environment.

Abstract: A method of error compensation for transducers having non-linear characteristics is shown. A computer-supported measuring circuit is used. In a first factory alignment, the output characteristic of the transducer is set so that it can be linearized by the computer using a power function. The appropriate exponent of the power function is stored. At the place of use, at least three calibration measurements are performed with the installed transducer using defined calibration measured values substantially spanning the measuring range of the transducer equidistantly. The power function is solved with the calibration measuring results and the stored exponent, so that the constants not yet known can be calculated. During every following service measurement, the actual measuring result is put into the now solved power function. The result of the equation is then outputted as the error-compensated measuring result.