Abstract: The present disclosure relates to a substrate transfer device for sensing deflection of an end-effector and a substrate processing apparatus having the same. The substrate transfer device includes: an end-effector extending in a first direction and supporting a substrate; an end-effector hand connected with one side in the first direction of the end-effector; a horizontal movement unit connected with the end-effector hand and moving the end-effector in the first direction; and a deflection sensing unit including a light emitting part and a light receiving part, which are respectively disposed at both sides of a movement path of the end-effector, and sensing deflection of the end-effector.

Abstract: According to an embodiment of the present invention, a method for processing a substrate through a heater that heats the substrate to perform a semiconductor process, the method comprising: inputting, into a correlation formula of at least one independent variable, which is a parameter related to the heater, and a dependent variable including a measured temperature of the heater, a measurement value corresponding to the independent variable, and calculating a predicted temperature of the heater; and applying a Kalman filter to the predicted temperature to calculate an estimated temperature.

Abstract: Provided is a batch type substrate processing apparatus that generates plasma by a plurality of electrodes to perform a processing process on a substrate. The batch type substrate processing apparatus includes a reaction tube, a plurality of electrodes, and an electrode protection part. The plurality of electrodes includes first and second power supply electrodes spaced apart from each other and first and second ground electrodes provided between the first power supply electrode and the second power supply electrode to correspond to the first power supply electrode and the second power supply electrode, respectively.

Abstract: In accordance with an exemplary embodiment of the present invention, an apparatus for processing substrate comprising: a support plate; an antenna disposed in parallel to one surface of the support plate and having 1st to n-th turns (n=an integer greater than 3) wound along one direction from an inner end; and a distance control unit capable of adjusting separation distances formed between the 1st to n-th turns.

Abstract: An apparatus for processing a substrate includes a reaction tube, a side cover, a heater, a first gas supplier, a second gas supplier and a controller. The reaction tube is configured to receive a substrate boat in which a plurality of the substrate is received to process the substrate. The side cover is configured to receive the reaction tube. The heater lines the interior of the side cover. The first gas supplier is provided to an upper portion of the side cover to supply a cooling gas at a first supplying rate to a space between the side cover and the reaction tube. The second gas supplier is provided to a lower portion of the side cover to supply the cooling gas at a second supplying rate different from the first supplying rate to the space between the side cover and the reaction tube. The controller controls the reaction tube.

Abstract: According to an embodiment of the present invention, an apparatus for processing substrate comprising: a susceptor; and a cover unit installed on an upper part of the susceptor, the substrate is placed on the cover unit, wherein the cover unit comprises: a cover frame having one or more air gaps; and one or more covers having a shape corresponding to each of the air gaps and mountable in each of the air gaps, wherein a depth of the air gap is at least three times the thickness of the substrate.

Abstract: In accordance with an exemplary embodiment of the present invention, an assembly for supporting substrate, the assembly comprising: a support frame having at least one insertion hole recessed from one surface of the support frame, the insertion hole having an inner movement hole and a screw hole positioned outside the inner movement hole; and a substrate support member including a shaft body inserted into the insertion hole with one end of the shaft body and a pin shaft connected to the shaft body to support the substrate in contact, wherein the shaft body having an inner screw body inserted into the insertion hole and positioned in the inner movement hole and a connection body disposed between the inner screw body and the pin shaft and positioned in the screw hole, wherein the inner diameter of the screw hole is smaller than the diameter of the inner movement hole and the outer diameter of the inner screw body, the inner screw body is capable of passing through the screw hole by rotation.

Abstract: Provided is a batch type substrate processing apparatus that generates plasma by a plurality of electrodes to perform a processing process on a substrate. The batch type substrate processing apparatus includes a reaction tube, a plurality of electrodes disposed to be spaced apart from each other, and an electrode protection part configured to protect the plurality of electrodes. The plurality of electrodes includes first and second power supply electrodes spaced apart from each other, and a ground electrode provided between the first power supply electrode and the second power supply electrode. The electrode protection part includes a plurality of first electrode protection tubes provided in the first and second power supply electrodes, respectively, a second electrode protection tube provided in the ground electrode, and a plurality of connection tubes configured to connect each of the plurality of first electrode protection tubes to the second electrode protection tube so as to communicate with each other.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber in which a process with respect to a substrate is performed, a susceptor which is installed in the chamber and on which the substrate is placed, a plurality of lift pins passing through the susceptor to support the substrate, and a plurality of protection plugs protruding from a bottom surface of the susceptor to surround a portion of each of the lift pins protruding from the bottom surface of the susceptor.

Abstract: The present inventive concept relates to a method for removing impurities in thin film and a substrate processing apparatus. The method for removing impurities in a thin film includes the steps of: providing a substrate having a thin film formed thereon in a process chamber; supplying a first gas reacting and coupling with impurities contained in the thin film, into the process chamber; exhausting a coupled product of the impurities and the first gas by depressurizing an interior of the process chamber after stopping the supply of the first gas; curing the thin film by supplying a second gas being different from the first gas into the process chamber; and stopping the supply of the second gas and exhausting the remaining second gas from the interior of the process chamber.

Abstract: In accordance with an exemplary embodiment of the present invention, provided is an apparatus for processing substrate, the apparatus comprising: a chamber providing a process space formed therein; a susceptor on which a substrate is placed, the susceptor being installed in the process space; a gas supply port formed in the central portion of the ceiling of the chamber to supply a source gas to the process space; an exhaust port formed on a side wall of the chamber to be positioned outside and below the susceptor, the exhaust port exhausting a gas in the process space in the direction from a center of the susceptor toward an edge of the susceptor; and an antenna positioned above the susceptor and installed outside the chamber to generate plasma from the source gas, an upper surface of the susceptor comprises a seating surface on which the substrate is placed during the process and a control surface which is located on the periphery of the seating surface and faces the process space to be exposed to the plasma

Abstract: According to an embodiment of the present invention, an apparatus for processing substrate comprising: a susceptor; and a cover unit installed on an upper part of the susceptor, the substrate is placed on the cover unit, wherein the cover unit comprises: a cover frame having one or more air gaps; and one or more covers having a shape corresponding to each of the air gaps and mountable in each of the air gaps, wherein a depth of the air gap is at least three times the thickness of the substrate.

Abstract: According to an embodiment of the present invention, a substrate processing apparatus including: a chamber in which a process is performed on a substrate; a susceptor installed in the chamber to support the substrate; and a showerhead installed above the susceptor, and the showerhead includes: a plurality of inner injection holes defined in an inner area corresponding to a portion above the substrate and injecting a reaction gas downward; and a plurality of outer injection holes defined in an outer area corresponding to a portion outside the inner area and injecting an inert gas along an inner wall of the chamber.

Abstract: An apparatus for processing a substrate includes a reaction tube, a side cover, a heater, a first gas supplier, a second gas supplier and a controller. The reaction tube is configured to receive a substrate boat in which a plurality of the substrate is received to process the substrate. The side cover is configured to receive the reaction tube. The heater lines the interior of the side cover. The first gas supplier is provided to an upper portion of the side cover to supply a cooling gas at a first supplying rate to a space between the side cover and the reaction tube. The second gas supplier is provided to a lower portion of the side cover to supply the cooling gas at a second supplying rate different from the first supplying rate to the space between the side cover and the reaction tube. The controller controls the reaction tube.

Abstract: In accordance with an exemplary embodiment of the present invention, an apparatus for processing substrate comprising: a support plate; an antenna disposed in parallel to one surface of the support plate and having 1st to n-th turns (n=an integer greater than 3) wound along one direction from an inner end; and a distance control unit capable of adjusting separation distances formed between the 1st to n-th turns.

Abstract: In accordance with an exemplary embodiment of the present invention, an assembly for supporting substrate, the assembly comprising: a support frame having at least one insertion hole recessed from one surface of the support frame, the insertion hole having an inner movement hole and a screw hole positioned outside the inner movement hole; and a substrate support member including a shaft body inserted into the insertion hole with one end of the shaft body and a pin shaft connected to the shaft body to support the substrate in contact, wherein the shaft body having an inner screw body inserted into the insertion hole and positioned in the inner movement hole and a connection body disposed between the inner screw body and the pin shaft and positioned in the screw hole, wherein the inner diameter of the screw hole is smaller than the diameter of the inner movement hole and the outer diameter of the inner screw body, the inner screw body is capable of passing through the screw hole by rotation.

Abstract: In accordance with an exemplary embodiment of the present invention, an apparatus for processing substrate with a plasma, the apparatus comprising: a chamber forming an inner space in which a processing gas is supplied; a substrate holder installed in the inner space to support a substrate; a dielectric window positioned on the substrate holder; at least one antenna installed outside the dielectric window to generate an induced plasma from the processing gas supplied to the inner space; and at least one metal shield installed between the antenna and the induced plasma.

Abstract: In accordance with an exemplary embodiment of the present invention, provided is an apparatus for processing substrate, the apparatus comprising: a chamber providing a process space formed therein; a susceptor on which a substrate is placed, the susceptor being installed in the process space; a gas supply port formed in the central portion of the ceiling of the chamber to supply a source gas to the process space; an exhaust port formed on a side wall of the chamber to be positioned outside and below the susceptor, the exhaust port exhausting a gas in the process space in the direction from a center of the susceptor toward an edge of the susceptor; and an antenna positioned above the susceptor and installed outside the chamber to generate plasma from the source gas, an upper surface of the susceptor comprises a seating surface on which the substrate is placed during the process and a control surface which is located on the periphery of the seating surface and faces the process space to be exposed to the plasma

Abstract: In one embodiment, a method for operating a substrate processing apparatus comprising a chamber in which a fluorine/silicon-containing substance is deposited on an inner wall through an oxide film removal process for a substrate placed therein, and an antenna installed outside the chamber to which RF power is applied, the method comprising: decomposing thermally the fluorine/silicon-containing substance through heating the inner wall of the chamber to 75° C. or more by supplying an inert gas to the inside of the chamber and applying RF power to the antenna.

Abstract: According to an embodiment of the present invention, a method for forming a thin film includes loading an object to be processed into a chamber, and while controlling the temperature of the object to be processed to be 400° C. or less, supplying an Si source gas and an oxidizing gas into the chamber to form a silicon oxide film on the surface of the object to be processed, wherein the oxidizing gas is heated to a temperature exceeding 400° C. before being supplied into the chamber.