Patents Assigned to Eugene Technology Co., Ltd.
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Publication number: 20200243301Abstract: A plasma treatment apparatus according to the present invention includes an induction chamber in which a source gas is introduced to generate plasma therein, a process chamber in which a substrate to be treated is treated by the plasma generated in the induction chamber, an inductively coupled plasma (ICP) antenna disposed outside the induction chamber and configured to form an inductive magnetic field so as to generate plasma from the source gas introduced into the induction chamber, and a high-frequency oscillator configured to apply a RF power to the ICP antenna.Type: ApplicationFiled: October 2, 2018Publication date: July 30, 2020Applicant: EUGENE TECHNOLOGY CO., LTD.Inventors: Jeong Hee JO, Yoon Seok CHOI, Zaretskiy SERGEY, Cha Young YOO
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Patent number: 10692745Abstract: The present disclosure relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of blocking particles falling from a lower portion of a substrate to a surface of a lower substrate. The substrate processing apparatus in accordance with an exemplary embodiment may include a substrate boat including a plurality of hollow plates coupled to a plurality of rods in a multistage manner, wherein a plurality of substrates are respectively loaded on the plurality of hollow plates, a reaction tube having an accommodation space in which the substrate boat is accommodated, a gas supply part configured to supply a process gas into the reaction tube from one side of the reaction tube, and an exhaust part configured to exhaust a process residue in the reaction tube from the other side of the reaction tube. Each of the hollow plates may include an edge portion defining a hollow portion vertically passing therethrough.Type: GrantFiled: December 23, 2017Date of Patent: June 23, 2020Assignee: EUGENE TECHNOLOGY CO., LTD.Inventor: Sung Ha Choi
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Patent number: 10622228Abstract: Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor provided with heaters to heat a substrate placed on the susceptor, and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; and a heat dissipating member including a contact surface being in thermal contact with the second temperature region. The heat dissipating member further includes an opening corresponding to the first temperature region. The heat dissipating member formed in a ring shape, in which the opening is surrounded with the contact surface, and the contact surface of the heat dissipating member makes thermal contact with the lower surface of the susceptor.Type: GrantFiled: December 29, 2016Date of Patent: April 14, 2020Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Dong-Keun Lee, Kyung-Jin Chu, Sung-Tae Je, Il-Kwang Yang
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Patent number: 10593545Abstract: A substrate processing method in which processes with respect to substrates are performed comprises: stacking the substrates on a substrate holder disposed in a staking space formed within a lower chamber through a passage formed in a side of the lower chamber, exhausting the stacking space through an auxiliary exhaust port connected to the stacking space, moving the substrate holder into an external reaction tube closing an opened upper side of the lower chamber to provide a process space in which the processes are performed, and supplying a reaction gas into the process space using a supply nozzle connected to the process space and exhausting the process space using an exhaust nozzle connected to the process space and an exhaust port connected to the exhaust nozzle.Type: GrantFiled: February 7, 2017Date of Patent: March 17, 2020Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Il-Kwang Yang, Sung-Tae Je, Byoung-Gyu Song, Yong-Ki Kim, Kyong-Hun Kim, Yang-Sik Shin
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Publication number: 20190385814Abstract: Provided is an ICP antenna used in a plasma processing device. The ICP antenna includes an antenna coil having one end connected to an RF power source through an impedance matching circuit and the other end that is grounded; and a variable capacitor connected in parallel to a portion of the antenna coil.Type: ApplicationFiled: December 5, 2017Publication date: December 19, 2019Applicant: EUGENE TECHNOLOGY CO., LTD.Inventor: Yoon-Seok CHOI
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Publication number: 20190304785Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.Type: ApplicationFiled: August 14, 2017Publication date: October 3, 2019Applicant: EUGENE TECHNOLOGY CO., LTD.Inventors: Doo Yeol RYU, Seung Woo SHIN, Cha Young YOO, Woo Duck JUNG, Ho Min CHOI, Wan Suk OH, Hui Sik KIM, Eun Ho KIM, Seong Jin PARK
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Patent number: 10392702Abstract: Provided is a substrate processing apparatus, and more particularly, a batch-type substrate processing apparatus where processes can be performed independently on a plurality of substrates. The substrate processing apparatus includes a substrate boat including a plurality of partition plates and a plurality of connection rods, an internal reaction tube, a gas supply unit, and an exhaust unit, and a plurality of substrates are loaded to be separated from the partition plates.Type: GrantFiled: July 19, 2016Date of Patent: August 27, 2019Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Woo Duck Jung, Kyu Jin Choi, Song Hwan Park, Seong Min Han, Sung Ha Choi
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Patent number: 10364494Abstract: The present disclosure relates to a substrate processing apparatus, and more particularly, a substrate processing apparatus that is capable of improving process uniformity on an entire surface of a substrate. The substrate processing apparatus includes a substrate boat in which a substrate is loaded, a reaction tube in which a processing process for the substrate loaded in the substrate boat is performed, a gas supply unit configured to supply a process gas into the reaction tube through an injection nozzle disposed on one side of the reaction tube, a heating unit including a plurality of vertical heating parts, which are disposed along a circumference of the reaction tube outside the reaction tube and configured to divide the circumference to the reaction tube into a plurality of portions so as to independently heat each of the divided portions of the reaction tube, and a control unit configured to control the heating unit.Type: GrantFiled: October 10, 2016Date of Patent: July 30, 2019Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Cha Young Yoo, Sung Tae Je, Kyu Jin Choi, Ja Dae Ku, Jun Kim, Bong Ju Jung, Kyung Seok Park, Yong Ki Kim, Jae Woo Kim
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Patent number: 10337103Abstract: Provided is a substrate processing apparatus including a tube having an inner space therein, a substrate supporting unit including a plurality of isolation plates configured to vertically stack a plurality of substrates thereon and divide a processing space, in which the plurality of substrates are processed, into a plurality of processing spaces in the tube, a gas supply unit configured to supply a processing gas to the plurality of substrates, and an exhaust unit disposed to face the gas supply unit to exhaust a gas inside the tube. A plurality of through-holes are defined in each of the isolation plates.Type: GrantFiled: July 26, 2016Date of Patent: July 2, 2019Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Jun Jin Hyon, Sung Tae Je, Byoung Gyu Song, Yong Ki Kim, Kyoung Hun Kim, Chang Dol Kim, Yang Sik Shin, Jae Woo Kim
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Patent number: 10287687Abstract: Provided is an apparatus for processing a substrate. The apparatus includes a chamber providing an inner space in which a process with respect to the substrate is performed, a susceptor disposed in the inner space and on which the substrate is placed, a fixing plate disposed in an exhaust port disposed in a sidewall of the chamber along a circumference of the susceptor, the fixing plate having a plurality of through-holes, and at least one sliding plate disposed on an upper or lower portion of the fixing plate to rotate with respect to a center of the susceptor, the at least one sliding plate selectively opening and closing the through-holes.Type: GrantFiled: December 10, 2014Date of Patent: May 14, 2019Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Sung-Tae Je, Jae-Ho Lee, Sang-Ho Choi, Seung-Hyun Yoon
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Patent number: 10283391Abstract: Provided is a method for multi-supplying gas, the method comprising: installing a control valve and an flow meter on each of a plurality of branch lines branched from a main supply line, in which one or more gases are supplied, and supplying the gas; and providing the gas by adjusting flow of the gas by a controller connected to each of the control valve and the flow meter, wherein the controller has a first control manner, which controls each of the control valves based on a rate of flow measured by the flow meter to required portion flow for each branch line, and the first control manner adjusts an open rate of the control valve if the rate of the measured flow to the required portion flow is not within a predetermined range, and a unit of adjusting the control valve increases or decreases according to a difference between the measured flow and the required portion flow.Type: GrantFiled: February 19, 2016Date of Patent: May 7, 2019Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Jun-Jin Hyon, Joo-Hyun Cho, Chul-Goo Kang, Yong-Ki Kim, Jung-Ki Min
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Patent number: 10246773Abstract: A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.Type: GrantFiled: May 9, 2016Date of Patent: April 2, 2019Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Seung-Woo Shin, Cha-Young Yoo, Woo-Duck Jung, Ho-Min Choi, Wan-Suk Oh, Koon-Woo Lee, Hyuk-Lyong Gwon, Ki-Ho Kim
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Patent number: 10229845Abstract: Provided is a substrate processing apparatus.Type: GrantFiled: October 17, 2014Date of Patent: March 12, 2019Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Jun-Jin Hyon, Byoung-Gyu Song, Kyong-Hun Kim, Yong-Ki Kim, Yang-Sik Shin, Chang-Dol Kim
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Patent number: 10199225Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a first tube defining an inner space, a substrate holder in which a plurality of substrates are vertically stacked in the inner space of the first tube, the substrate holder defining a plurality of processing spaces in which the substrates are individually processed, a gas supply unit having a plurality of main injection holes each of which is vertically defined to correspond to each of the processing spaces to supply a gas into the first tube, and an exhaust unit configured to exhaust the gas supplied into the plurality of processing spaces in the first tube to the outside. The exhaust unit includes a plurality of exhaust holes facing the main injection holes and vertically arranged in a line to correspond to the processing spaces. Therefore, the gas may smoothly flow on the substrate.Type: GrantFiled: April 12, 2016Date of Patent: February 5, 2019Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Woo Duck Jung, Sung Tae Je, Kyu Jin Choi, Seong Min Han
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Patent number: 10192760Abstract: A substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit are provided. The substrate supporting unit includes a susceptor provided with heaters to heat a substrate placed on the susceptor, and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; a heat dissipating member including a contact surface being in thermal contact with the second temperature region; and a reflecting member disposed approximately in parallel with one surface of the susceptor to reflect heat emitted from the susceptor toward the susceptor.Type: GrantFiled: October 26, 2015Date of Patent: January 29, 2019Assignee: Eugene Technology Co., Ltd.Inventors: Dong-Keun Lee, Kyung-Jin Chu, Sung-Tae Je, Il-Kwang Yang
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Patent number: 10161036Abstract: The present invention may include: a tube providing an interior space in which substrates are processed; a substrate support portion stacking a plurality of substrates in the interior space of the tube in multi-level; a gas supply portion supplying a process gas to the plurality of substrates; an exhaust portion disposed to face the gas supply portion to absorb the process gas; and a flowage adjustment portion having spray openings formed along a circumference of the tube between the gas supply portion and the exhaust portion to spray an adjusting gas, and may be capable of controlling the amount of process gas supplied to an upper surface of the substrate by adjusting the flowage of process gas.Type: GrantFiled: July 26, 2016Date of Patent: December 25, 2018Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Jun Jin Hyon, Sung Tae Je, Byoung Gyu Song, Yong Ki Kim, Kyoung Hun Kim, Chang Dol Kim, Yang Sik Shin, Jae Woo Kim
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Patent number: 10145012Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a lower chamber having an opened upper side, an upper chamber opening or closing the upper side of the lower chamber, the upper chamber defining an inner space, in which a process is performed on a substrate, together with the lower chamber, a showerhead disposed on a lower portion of the upper chamber to supply a reaction gas toward the inner space, wherein a buffer space is defined between the showerhead and the upper chamber, a partition member disposed in the buffer space to partition the buffer space into a plurality of diffusion regions, and a plurality of gas supply ports disposed in the upper chamber to supply the reaction gas toward each of the diffusion regions.Type: GrantFiled: December 10, 2014Date of Patent: December 4, 2018Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Sung-Tae Je, Gil Sun Jang, Chang-Hoon Yun, Kyong-Hun Kim
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Patent number: 10006121Abstract: Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, and Si4H10, to deposit a silicon oxide layer. The stacking of the sacrificial layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and dichloro silane (SiCl2H2), and ammonia-based gas, to deposit a silicon nitride layer.Type: GrantFiled: February 25, 2014Date of Patent: June 26, 2018Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Sung Kil Cho, Hai Won Kim, Sang Ho Woo, Seung Woo Shin, Gil Sun Jang, Wan Suk Oh
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Publication number: 20180112307Abstract: According to an embodiment of the present invention, provided is a method for forming an amorphous thin film, the method comprising: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.Type: ApplicationFiled: May 9, 2016Publication date: April 26, 2018Applicant: EUGENE TECHNOLOGY CO., LTD.Inventors: Seung-Woo SHIN, Cha-young YOO, Woo-Duck JUNG, Ho-Min CHOI, Wan-Suk OH, Koon-Woo LEE, Hyuk-Lyong GWON, Ki-Ho KIM
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Patent number: 9953850Abstract: Provided is a substrate processing apparatus.Type: GrantFiled: November 16, 2012Date of Patent: April 24, 2018Assignee: EUGENE TECHNOLOGY CO., LTD.Inventors: Il-Kwang Yang, Sung-Tae Je, Byoung-Gyu Song, Yong-Ki Kim, Kyong-Hun Kim, Yang-Sik Shin