Abstract: The present application provides a method for packaging a display device and an apparatus therefor. The method includes: providing a display device, a platform, a laser beam and a magnetic mechanism; wherein the display device includes a light emitting element, the light emitting element includes at least one effective light emitting region thereon and is prepared on an upper surface of a glass substrate, the glass substrate is bonded to a glass cover plate via a sealing adhesive layer; the display device is placed on the platform; the laser beam penetrates the glass cover plate and focuses on the sealing adhesive layer to sinter the sealing adhesive layer; and the magnetic mechanism clamps the glass cover plate and the glass substrate from top to bottom and applies a uniform pressing force on the effective light emitting region of the display device.

Abstract: The present disclosure disclosed a method of forming the buffer layer in the LTPS products. The method comprises the following steps: heating the substrate to make the alkali metal ions diffuse to the surface of the glass; washing the substrate by acid to remove the alkali metal ions on the surface of the glass; forming the buffer layer on the glass which has been heated and washed by acid, wherein the material of the buffer layer is SiOx. The method of the present disclosure based on the design of the single buffer layer, it can greatly promote the capacity and can economize the gas. Furthermore, it can avoid the cross contamination of the different layers so as to promote characteristic of the element.

Abstract: The present disclosure discloses a method of laser annealing process, wherein the surface of the semiconductor structure on a substrate is scanned by a laser annealing device, and the said laser annealing device comprises a laser source and the optical instruments. The invention comprises the following steps: generating a laser beam by the laser source, and the laser beam is irradiating on a mirror, the route thereof changed by 90 degrees and converging the laser beam by the optical instrument thereafter. By this method, an improved annealing process which saved the chamber, reduced the likelihood of the oxidation of silicon film in the annealing process, improved the electrical property of silicon substrate, reduced the weight of machine and further simplified the maintenance machine.

Abstract: The present disclosure discloses a method of manufacturing the LTPS array substrate, comprising: depositing a polysilicon layer and an amorphous silicon layer on the substrate successively and crystallizing the amorphous silicon layer to form the polysilicon layer by laser annealing; coating a photoresist layer covering the PMOS area, NMOS area and TFT area of the polysilicon layer; forming a polysilicon pattern and a channel by dry etching the polysilicon layer, then removing the regions of the photoresist layer which are thinner and covering the NMOS area and the TFT area by ashing, the region of the photoresist layer covering the PMOS area is remained. The present disclosure saves the cost of the equipment, improves the yield, reduces the design defect and the process difficulty of the conventional process using 8 photomasks.

Abstract: The invention discloses a method and a device of improving crystallization ratio of polysilicon, which is applied to the process that the amorphous silicon layer converts into the polysilicon layer. More specifically, superposing at least two pulse laser beams into a superposed pulse laser beam. The pulse width of the superposed pulse laser beam is larger than each pulse laser beam. Next, utilizing the superposed pulse laser beam to irradiate onto the amorphous silicon layer for transforming the amorphous silicon layer into polysilicon layer. The superposed pulse laser beam irradiates onto the surface of the amorphous silicon layer. The amorphous silicon layer is transformed into the polysilicon layer. Consequently, the crystallization ratio of polysilicon is improved.

Abstract: An organic electronic light emitting device comprises a substrate; a first gate electrode formed on an upper surface of the substrate; a first insulating layer formed on the upper surface of the substrate and covering the first gate electrode; an organic layer formed on an upper surface of the first insulating layer and comprising at least two organic layers with different conductive type; a second insulating layer formed on an upper surface of the organic layer; a second gate electrode formed on an upper surface of the second insulating layer; and a source electrode and a drain electrode formed between the first and second insulating layers, and the source and drain electrodes located on both sides of the organic layer respectively.

Abstract: The present disclosure discloses a method for improving the reflectivity of aluminum in OLED structure. The OLED structure includes a top ITO layer, a middle reflective layer made by aluminum and a bottom ITO layer. The method comprises; forming a bottom ITO layer; coating the aluminous reflective layer on the surface of the bottom ITO layer and forming an aluminum oxide layer on the surface of the aluminous reflective layer uniformly by introducing plenty of oxygen gas simultaneously; adjusting the velocity of coating the aluminous reflective until the aluminum oxide layer is formed; and forming an top ITO layer on the surface of the aluminum oxide layer. The present disclosure can repair and cover the defects on the surface of the metal aluminum film and can reduce the concavities and hillocks on the surface of the metal aluminum film. Consequently, the reflectivity of aluminum in OLED structure is improved.

Abstract: An evaporation source assembly used for depositing film on a substrate is provided, the evaporation source assembly comprises: a body comprising a top element, a bottom element and side walls defining a hollow chamber together, the bottom element comprises a plurality of inlet openings communicating with the chamber; a plurality of nozzles located at the top element and communicate with the chamber; a plurality of evaporators for containing and evaporating the evaporating material, which are positioned below the body and correspond to inlet openings respectively; each evaporator has an opening through which the evaporators is connected with corresponding inlet openings; and a plurality of connecting pipes for connecting the opening of the evaporators with the inlet openings, the connecting pipes are tapered pipes with a broad top and a narrow bottom to improve the vapor pressure of the evaporating material in the body to reach pressure balance.

Abstract: The N-type poly-silicon is applied in the LTPS productions. The LTPS productions comprise an N-type poly-silicon and a P-type poly-silicon. The N-type poly-silicon, from bottom to top, successively includes a substrate layer, a SiOx layer, a SiNx layer, a metal layer and a photoresist. The substrate layer is an A-type silicon layer. Wherein, the method for controlling the threshold voltage of the N-type poly-silicon specifically comprise the following steps: (a) etching the metal layer and the SiNx layer, and over etching the SiOx layer in a small quantity; (b) over etching the metal layer, and etching a portion of the SiOx layer, and the SiOx layer is not etched through.

Abstract: The disclosure discloses a single point linear evaporation source system comprising a body, an evaporator and two guiding plates. The body comprises an elongated chamber, and the surface of the body towards the substrate is provided with a plurality of nozzles communicating with the chamber for ejecting evaporating vapor towards the substrate. The evaporator comprises an opening portion communicating with the chamber. Two guiding plates are disposed inclinedly at two ends of the chamber, and the periphery of the guiding plates are in sealing connection with the body, and the distance between two ends of the two guiding plates adjacent to the substrate is larger than the distance between two ends of the two guiding plates adjacent to the evaporator. The disclosure improves the balance performance of the vapor pressure inside the chamber, and improves the uniformity of the film deposited on the substrate.

Abstract: The present application discloses a metal matrix composite for evaporation mask, comprising matrix and reinforcing phase dispersed in the matrix, wherein the matrix is iron-nickel alloy, the reinforcing phase is non-metallic particles, and the volume ratio of the non-metallic particles in the matrix is in the range from 20 vol % to 50 vol %. The present application also provides an evaporation mask made from the metal matrix composite and a making method thereof. The metal matrix composite according to the present application has a decreased density and an elevated elasticity modulus, and thereby is useful to prevent the evaporation mask from drooping due to gravity. Further, the method for making the evaporation mask according to the present application is beneficial to improve the overall performance of the evaporation mask, save raw materials and reduce the cost.

Abstract: The present disclosure discloses a sputtering apparatus for reducing the damage to the base board caused by ITO sputtering and the method thereof. The sputtering chamber of the sputtering apparatus includes a base board connection structure for setting a base board and a target connection structure for setting a target. The target connection structure makes the target locate on the side of the base board connection structure. The target connection structure forms a precalculated angle with the base board. There is a space between the target and the base board. The target connection structure includes a negative potential generator for generating negative potential. The negative potential is applied to the target which is connected to the target connection structure. The sputtering chamber of the apparatus further includes an anode plate which is in parallel with the target material.

Abstract: A method for forming polysilicon using high energy sources of radiation includes the steps of providing a laser system which has at least two laser sources with different wavelengths, a dichroic mirror, a reflecting mirror and a substrate; generating a laser beam by the laser sources to irradiate towards the substrate perpendicularly by the dichroic mirror and the reflecting mirror which are faced to the laser source and meet the laser sources at a certain angle; placing the reflecting mirror above the dichroic mirror; placing the a semiconductor thin-film material on the substrate. The advantages of the above technical solution are that as follows: the crystallization rate of poly-silicon is effectively increased; the usage frequency of the excimer laser is reduced; the cost thereof is reduced; the throughput of annealing is affectively improved.

Abstract: The present disclosure is related to a method of fabricating display panels, especially to a method of fabricating flexible electronic devices. By means of adding an inorganic membrane with surface roughness between a bonding layer and a PI film, in order to effectively improve the dimensional stability of plastic substrate and the water/oxygen barrier property of flexible substrate during the PI film fabrication and the follow-up process, improving the yield of good products and prolonging the working life thereof.

Abstract: The present disclosure relates to a process for manufacturing Organic Light-Emitting Diode (OLED) display panel, and in particular to a device and a method for detecting evaporation source. Through installing a mobile detector above a linear evaporation source, the vapor-deposition rate of the whole linear can be timely and effectively detected. The feedback of uniformity of vapor-deposition can be effectively given, and at the same time the abnormity of the vapor-deposition can be found. Meanwhile, in order to increase the yield and quality of product as well as prevent the evaporation source pollution caused by the dropping of some defects such as organic material or dust, the mobile detector is locked in one side of the evaporation source when it does not work.

Abstract: The present invention relates to an OLED pixel driving circuit which has a data input unit for sending out controlling signals, a voltage storage unit for storing voltages from a first power source, a driving unit for receiving the controlling signals from the data input unit to selectively activate the voltage storage unit, a second power source providing a voltage to be stored in the voltage storage unit; and a switch connected to the second power source to offset potential loss of the first power source from the voltage stored in the voltage storage unit. The compensation circuit can not only compensate the non-uniformity of the threshold voltage but also eliminate the non-uniformity of the OLED display caused by the power IR drop, so that the effect of display of the OLED are maximally improved.