Abstract: A pixel arrangement structure for an organic light-emitting diode includes a plurality of red subpixel groups, a plurality of green subpixel groups, and a plurality of blue subpixel groups. Each red subpixel group is comprised of a plurality of red subpixels. Each green subpixel group is comprised of a plurality of green subpixels. Each blue subpixel group is comprised of a plurality of blue subpixels. The red subpixel groups, the green subpixel groups, and the blue subpixel groups are spaced from each other. One of the red subpixels of the red subpixel groups, one of the green subpixels of the green subpixel groups, and one of the blue subpixels of the blue subpixel groups, which are adjacent to each other, together form a pixel. The subpixels of the same color are gathered to form a subpixel group to increase the aperture ratio of metal masks.

Abstract: A vapor deposition device has a plurality of moving plates between the cooling plate and moving vapor deposition source is controlled by the blowout panel. Moreover, when the vapor deposition materials absorbed by the blowout panel are up to the predetermined value, the moving plates are rotated around their axis simultaneously by the linkage to form a new blowout panel for performing the subsequent vapor deposition process. Consequently, the adsorption ability of the blowout board is greatly improved, and the crack and peeling off of the blowout panel caused by absorbing too many vapor deposition materials are avoided. Hence, the volume production of the evaporative coating equipment is improved.

Abstract: The present disclosure relates to a process for manufacturing Organic Light-Emitting Diode (OLED) display panel, and in particular to a device and a method for detecting evaporation source. Through installing a mobile detector above a linear evaporation source, the vapor-deposition rate of the whole linear can be timely and effectively detected. The feedback of uniformity of vapor-deposition can be effectively given, and at the same time the abnormity of the vapor-deposition can be found. Meanwhile, in order to increase the yield and quality of product as well as prevent the evaporation source pollution caused by the dropping of some defects such as organic material or dust, the mobile detector is locked in one side of the evaporation source when it does not work.

Abstract: The present invention provides an organic electroluminescent material, the process for preparing same and an OLED device using same. The organic electroluminescent material has a general formula (I): wherein, each of R1, R2, R3 and R4 is independently selected from the group consisting of H, C1-C20 alkyl, C1-C20 alkoxy, ether groups and aromatic amino groups; each of Z is carbon atom or each of Z is nitrogen atom; R is carbazolyl, wherein, n is an integer ranging from 1 to 3 when each of Z is carbon atom, and n is an integer ranging from 1 to 2 when each of Z is nitrogen atom. The organic electroluminescent material of the invention can be used as emitting layer material in an OLED device and improve the luminescent efficiency and lifetime of the device. The luminescence spectral peakmay be adjusted by changing the group on the molecular structure.

Abstract: An upper electrode device applied to the film coating process has a splitter chamber and at least three gas diversion plates; a gas inlet is set on the splitter chamber; the at least three gas diversion plates were fixed on the inside walls of the splitter chamber and used for diverting and outputting the gas introduced into the splitter chamber through the gas inlet. By using the upper electrode device provided by the present disclosure can uniformize the gas used for coating in the film coating process, especially uniformize the gas in the perimeter area and the center area. Consequently, the uniformity of the thickness of the whole film coated is improved.

Abstract: One embodiment of the present invention discloses an AMOLED display device and a method for producing the sub-pixels thereof. To change the metal masks used for forming the resonator adjustment layer in sub-pixels to form the sub-pixels with resonator adjustment layers in different thicknesses. On other hands, a light blue sub-pixel and an orange sub-pixel are added into a pixel unit to form the pixel unit consisting of a blue sub-pixel, a red sub-pixel, a green sub-pixel, a light blue sub-pixel and an orange sub-pixel. The AMOLED with the above features can reduce the power consumption in the display screen greatly, and can maintain the high color saturation.

Abstract: An inverted top emitting device includes an TIO/Ag/ITO substrate, a cathode layer, an electron transport layer, an emissive layer, a hole transport layer, and an anode layer. The TIO/Ag/ITO substrate, the cathode layer, the electron transport layer, the emissive layer, the hole transport layer, and the anode layer are stacked in sequence. The cathode layer is made of cesium carbonate. The inverted top emitting device and its producing method provided by the present invention change the current structure of ITO/Ag/ITO/HTL/EML/ETL/Mg:Ag of the device to ITO/Ag/ITO/Cs2CO3/ETL/EML/HTL/MoO3/Ag. This avoids use of low work function metals, such as magnesium. Thus, even if the encapsulation is not satisfactory, the device is less likely to be oxidized by water and oxygen, providing the device with a longer service life.

Abstract: The present disclosure provides an OLED structure. The OLED structure includes a cathode layer, an organic light emitting layer, and an anode layer. The organic light emitting layer is located between the cathode layer and the anode layer. A reflective layer is formed under the cathode layer and the anode layer, an insulation isolation layer is formed on the reflective layer. In the present disclosure, structural modification is performed on the anode of the OLED structure to directly avoid possibility of hill lock in the anode. Thus, improvement in the reliability, productivity and yield of the OLED is ensured.

Abstract: One embodiment of the present invention discloses a light-emitting signal control circuit comprising: a first driving transistor for allowing a voltage to be output from a first voltage source to a output end under the control of a low level drive signal; a second driving transistor for allowing a voltage to be output from a second voltage source to the output under the control of a second low level drive signal; a first transmission control transistor connected between the first voltage source and the control end of a first driving transistor; a control signal unit for generating the first low level drive signal and the second low level drive signal; a voltage stabilizer connected between the second low level drive signal and first transmission control transistor. The circuit will suppress the voltage fluctuation on the control end of the first transmission control transistor.

Abstract: The invention discloses a method and a device of improving crystallization ratio of polysilicon, which is applied to the process that the amorphous silicon layer converts into the polysilicon layer. More specifically, superposing at least two pulse laser beams into a superposed pulse laser beam. The pulse width of the superposed pulse laser beam is larger than each pulse laser beam. Next, utilizing the superposed pulse laser beam to irradiate onto the amorphous silicon layer for transforming the amorphous silicon layer into polysilicon layer. The superposed pulse laser beam irradiates onto the surface of the amorphous silicon layer. The amorphous silicon layer is transformed into the polysilicon layer. Consequently, the crystallization ratio of polysilicon is improved.

Abstract: A thin film transistor includes a semiconductor layer including a source region, a drain region, a channel region, first lightly doped drain regions adjacent to the channel region and second lightly doped drain regions adjacent to the first lightly doped drain regions; wherein the second lightly doped drain regions have a doping concentration lower than that of the first lightly doped drain regions. According to the present application, the leakage current in a switching transistor may be further reduced, thereby avoiding instability and even failure in the operation of the assembly caused by overlarge leakage current.

Abstract: The present disclosure relates to an annealing apparatus and an annealing method, which are applied to the packaging art of the AMOLED panel, wherein the annealing apparatus comprises an electromagnetic wave generator coupled with a plurality of irradiators and comprises a plate whose surface is provided with the irradiators and which is placed above or below the AMOLED panel for annealing it. The method comprises the following steps: annealing the AMOLED panel by an annealing apparatus which comprises an electromagnetic wave generator and a plate having lots of irradiators; when the irradiators aim at the annealing area, the annealing areas are annealed by the high frequency electromagnetic wave generated by the electromagnetic wave generator and irradiated from the irradiators. The present disclosure can save the time of the annealing process and can improve the process situation. Meanwhile, the present disclosure increases production yield and improves product quality.

Abstract: The present disclosure disclosed a method of forming the buffer layer in the LTPS products. The method comprises the following steps: heating the substrate to make the alkali metal ions diffuse to the surface of the glass; washing the substrate by acid to remove the alkali metal ions on the surface of the glass; forming the buffer layer on the glass which has been heated and washed by acid, wherein the material of the buffer layer is SiOx. The method of the present disclosure based on the design of the single buffer layer, it can greatly promote the capacity and can economize the gas. Furthermore, it can avoid the cross contamination of the different layers so as to promote characteristic of the element.

Abstract: An organic electronic light emitting device includes a substrate; a first gate electrode formed on a top surface of the substrate; a first insulating layer formed on the top surface of the substrate and covering the first gate electrode; an organic layer formed on a top surface of the first insulating layer and comprising at least two organic layers with different conductivity type; a second insulating layer formed on a top surface of the organic layer; a second gate electrode formed on a top surface of the second insulating layer; and a source electrode and a drain electrode formed between the first and second insulating layers, and the source and drain electrodes located on both sides of the organic layer respectively.

Abstract: The N-type poly-silicon is applied in the LTPS productions. The LTPS productions comprise an N-type poly-silicon and a P-type poly-silicon. The N-type poly-silicon, from bottom to top, successively includes a substrate layer, a SiOx layer, a SiNx layer, a metal layer and a photoresist. The substrate layer is an A-type silicon layer. Wherein, the method for controlling the threshold voltage of the N-type poly-silicon specifically comprise the following steps: (a) etching the metal layer and the SiNx layer, and over etching the SiOx layer in a small quantity; (b) over etching the metal layer, and etching a portion of the SiOx layer, and the SiOx layer is not etched through.

Abstract: An electromagnetic touch-control screen structure, comprising: a display panel; a touch-control plate over the display panel; an electromagnetic induction plate over the touch-control plate; and a cover lens attached on the electromagnetic induction plate. The electromagnetic touch-control screen of the disclosure, by deploying reasonable structure and manufacturing technique, stacks an electromagnetic induction plate with a touch-control plate, a cover lens and a display panel. Compared with existing manufacturing techniques, it can reduce one time of lamination operation, and dramatically decrease the thickness and weight of the electromagnetic structure, so that it can meet the need of lightness and thinness, for touch-control display equipments, like cellphone.

Abstract: The disclosure discloses a photoresist canister liner comprises a liner body for containing photoresist comprising an upper portion and a tapered lower portion; an opening portion disposed at a top of the upper portion and comprising a photoresist outlet; and a diptube communicating with the photoresist outlet and inserted in the liner body and extending to a bottom of the lower portion. The lower portion of the liner body of the photoresist canister liner in the disclosure has diminishing section area, the photoresist can flow to the bottom of the liner body along the tapered lower portion and is collected in the bottom of the liner body, which prevents photoresist being wasted.

Abstract: An evaporation source assembly used for depositing film on a substrate is provided, the evaporation source assembly comprises: a body comprising a top element, a bottom element and side walls defining a hollow chamber together, the bottom element comprises a plurality of inlet openings communicating with the chamber; a plurality of nozzles located at the top element and communicate with the chamber; a plurality of evaporators for containing and evaporating the evaporating material, which are positioned below the body and correspond to inlet openings respectively; each evaporator has an opening through which the evaporators is connected with corresponding inlet openings; and a plurality of connecting pipes for connecting the opening of the evaporators with the inlet openings, the connecting pipes are tapered pipes with a broad top and a narrow bottom to improve the vapor pressure of the evaporating material in the body to reach pressure balance.

Abstract: The present disclosure discloses a method of manufacturing the LTPS array substrate, comprising: depositing a polysilicon layer and an amorphous silicon layer on the substrate successively and crystallizing the amorphous silicon layer to form the polysilicon layer by laser annealing; coating a photoresist layer covering the PMOS area, NMOS area and TFT area of the polysilicon layer; forming a polysilicon pattern and a channel by dry etching the polysilicon layer, then removing the regions of the photoresist layer which are thinner and covering the NMOS area and the TFT area by ashing, the region of the photoresist layer covering the PMOS area is remained. The present disclosure saves the cost of the equipment, improves the yield, reduces the design defect and the process difficulty of the conventional process using 8 photomasks.

Abstract: Provided herein is a flexible packaging substrate, comprising a first polymer layer; a metal foil layer disposed on the first polymer layer; a second polymer layer disposed on the metal foil layer; and wherein the surface area of the metal foil layer is larger than those of both the first and the second polymer layer. Also provided are a fabricating method for the same and a method for packaging an organic electroluminescent device using the same. The flexible packaging substrate according to the present invention is able to prevent oxygen and moisture from permeating effectively, allowing the service life of the packaged device prolonged. Additionally, the fabrication according to the examples of the present invention was performed through simple processes, and thereby the packaging process was simplified and the packaging performance was improved.