Abstract: An integrated fireset including a bridge slapper (or exploding via) connected internally to a firing capacitor, flyer material, and solid state switch, the fireset and energetic components encapsulated by a “TO” type transistor package that is hermetically sealed. The integrated fireset may include an integrated switch; a first electrode; a second electrode and separated from the first electrode by the integrated switch; one or more vias configured to electrically couple the integrated switch and a contact region of the second electrode; and a patterned dielectric layer disposed on the contact region.

Abstract: The techniques described herein relate to systems, apparatus, articles of manufacture, and methods for light generation. An example apparatus for ultraviolet (UV) radiation generation includes a microwave cavity comprising an electrodeless UV bulb, the electrodeless UV bulb comprising a bulb fill capable of emitting UV light, a synthesizer configured to generate a microwave signal, and a solid-state amplifier configured to amplify the microwave signal to generate an amplified microwave signal for igniting the bulb fill to emit UV light.

Abstract: Methods and systems are provided for ultra-violet curing, and in particular, for ultra-violet curing of optical fiber surface coatings. In one example, a curing device includes a first elliptic cylindrical reflector, with a second elliptic cylindrical reflector housed within the first elliptic cylindrical reflector. The first elliptic cylindrical reflector and second elliptic cylindrical reflector have a co-located focus, and a workpiece to be cured by the curing device may be arranged at the co-located focus.

Abstract: A very strong selection mechanism is provided in a tunable vertical cavity surface emitting laser (VCSEL) by manipulating the laser threshold to be different for TE and TM polarization by a employing a subwavelength grating in the laser cavity. The laser selects the polarization with the lowest threshold. The grating does not diffract and does not add loss to the cavity. It works by creating a large birefringence layer between the semiconductor and air sub-cavities of the full VCSEL. Multilayer stack calculations show that this results in a lower threshold for the TM polarization over the TE. This subwavelength grating layer, in one embodiment, replaces the AR coating on the semiconductor surface.

Abstract: Tunable VCSELs (TVCSELs) employing expanded material systems with expanded mechanical/optical design space for semiconductor DBR mirrors on GaAs substrates. One is the InGaAs/AlGaAsP material system. It adds indium In to decrease InGaAs H-layer bandgap for higher refractive index and higher DBR layer refractive index contrast. Adding phosphorus P gives independent control of bandgap and strain of AlGaAsP low refractive index L-layers. The tensile strain of AlGaAsP L-layer compensates compressive strain of InGaAs H-layer and lowers the cumulative strain of the multilayer DBR structure. Another option is the InGaAsN(Sb)/AlGaAsP material system, where both types of layers can be lattice matched to GaAs. It uses indium In and nitrogen N, and possibly antimony Sb, to get independent control of strain and bandgap, and thus refractive index, of dilute nitride InGaAsN(Sb) H-layers, with lower bandgap and higher refractive index than starting GaAs.

Abstract: A system for irradiating a microplate may include a modular light engine with one or more light emitting devices. The light emitting devices are configured to emit germicidal radiation to irradiate the microplate, which is configured to be positioned below the modular light engine inside a chamber of the microplate irradiation system. In this way, a uniform intensity of germicidal radiation may be output by light emitting devices, resulting in disruption of contaminating nucleic acids present in the microplate.

Abstract: Systems and methods are provided for a UV-VIS spectrophotometer, such as a UV-VIS detector unit included in a high-performance liquid chromatography system. In one example, a system for the UV-VIS detector unit may include a first light source, a signal detector, a flow path positioned intermediate the first light source and the signal detector, a second light source, and a reference detector. The first light source, the signal detector, and the flow path may be aligned along a first axis, and the second light source and the reference detector may be aligned along a second axis, different than the first axis.

Abstract: The techniques described herein relate to excimer lamps. An example excimer lamp includes a dielectric forming at least one side of a sealed cavity, an electrode array disposed over a surface of the dielectric, the electrode array comprising a plurality of electrodes of alternating polarity disposed at respective positions across at least one dimension of the excimer lamp, and a gas within the sealed cavity, the gas being capable of emitting ultraviolet light in response to excitation of the electrode array.

Abstract: A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example.

Abstract: A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, a proximal-side electrostatic cavity is defined between the VCSEL device and the membrane device is used to displace the mirror to decrease a size of an optical cavity.

Abstract: An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping.

Abstract: A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

Abstract: A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example.

Abstract: A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, a proximal-side electrostatic cavity is defined between the VCSEL device and the membrane device is used to displace the mirror to decrease a size of an optical cavity.

Abstract: Provided herein are deposition systems utilizing coated grids in an ion deposition process which provide more predictable erosion of the coating rather than erosion of the grid itself. Further, coatings may be utilized in which the coating material does not act as a contaminant to the deposition process, thereby eliminating contamination of the sample surface due to deposition of unwanted grid material. Also provided are methods of refurbishing a coated grid by periodically replacing the coating material thus protecting the grid itself and allowing a grid to be used indefinitely.

Abstract: A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, a proximal-side electrostatic cavity is defined between the VCSEL device and the membrane device is used to displace the mirror to decrease a size of an optical cavity.

Abstract: Quantum well designs for tunable VCSELs are disclosed that are tolerant of the wavelength shift. Specifically, the active region has even number of substantially uniformly spaced (¼ of the center wavelength in the semiconducting material) quantum wells.

Abstract: Optical coherence tomography (OCT) probe and system designs are disclosed that minimize the effects of mechanical movement and strain to the probe to the OCT analysis. It also concerns optical designs that are robust against noise from the OCT laser source. Also integrated OCT system-probes are included that yield compact and robust electro-opto-mechanical systems along with polarization sensitive OCT systems.

Abstract: A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be ON to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn ON. After the at least one IGBT turns ON, the at least one GTO is configured to turn OFF. After a predetermined amount of time, reflecting the post fabrication alteration to the GTO's minority carrier lifetime (e.g. electron irradiation), after the at least one GTO turns OFF, the at least one IGBT is configured to turn OFF.

Abstract: A design and method for introducing asymmetric crystal strain to control polarization in a tunable VCSEL, either optically or electrically pumped. The invention is especially relevant to wafer- or die-bonded tunable VCSELs. Then, mechanical stress is applied to the half VCSEL device by asymmetric arrangement of metal bond pads.