Abstract: A film thickness measuring apparatus applies an electron beam to a thin film as a measurement object formed on a substrate, and measures a value of substrate current that flows in the substrate thereupon. The film thickness measuring apparatus corrects the substrate current value taking into account an influence of a charge distribution generated in the neighborhood of the thin film due to the application of the electron beam or an influence of a configuration of the surface of the substrate in the neighborhood of the thin film. The film thickness measuring apparatus acquires reference data representing a correlation between film thicknesses and substrate current values with respect to standard samples and calculates a thickness of the thin film from the corrected substrate current value taking into account the reference data.

Abstract: A semiconductor manufacturing apparatus, which performs predetermined processing for a group of wafers supplied by a preprocessor that performs preliminary processing, comprises a data storage unit for storing wafer processing history data received from the pre-processor, a target value storage unit for storing a processing target value for the semiconductor manufacturing apparatus, an identification unit for identifying a wafer supplied by the pre-processor, a processor for employing the wafer processing history data and the processing target value to determine processing conditions for the wafer identified by the identification unit, a conveying unit for transporting the wafer from the identification unit to a wafer processor, a controller for controlling the wafer processor in accordance with the wafer processing conditions instructed by the processor, and a determination unit for examining the condition of the wafer that has been processed by the wafer processor to determine whether the wafer is good or b

Abstract: A semiconductor device inspecting apparatus capable of a high-precision nondestructive inspection with a reduction of external noises, by using a value of an area having no hole as a background value for a correction when measuring an average current, measuring the current in a current differential input amplifier constitution, automatically judging whether a result of the measurement is caused by a defect of the device or of the equipment on the basis of a measured current waveform, measuring a current value of electron beams, and storing and reusing a waiting time between irradiation with electron beams and stabilization of the current measurement value.

Abstract: A plurality of measuring positions on a sample are sequentially irradiated with electron beams having identical cross sectional shapes, currents produced in the sample when the individual measuring positions are irradiated with electron beams are measured and the measured currents or physical amounts derived from the measured currents are displayed on a two-dimensional plane as a function of measuring position.