Abstract: A planarization method for use during manufacture of a microelectronic field emitter device, comprising applying a glass frit slurry including glass particles in a removable base, and subsequently baking to liquify the frit.

Abstract: A light emission device including (i) a light emitting organic material, i.e., an organic material which in response to an applied voltage thereon emits light in the visible spectrum; (ii) an array of emitter tip elements in contact with the light emitting organic material; (iii) the first conductor coupled to the emitter tip elements in the array to stimulate emission of electrons from the emitter tip elements when the first conductor is connected to a power supply; (iv) a second conductor contacting the organic material and in depart relationship to the array of emitter tip elements, the second conductor being arranged in relation to the first conductor, to impose an applied voltage on the organic material when the first conductor is connected to the power supply, and electrons are emitted from the emitter tip elements into the light emitting organic material.

Abstract: A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.

Abstract: A spacer structure for use in a flat panel display, and a corresponding flat panel display article are disclosed, together with an appertaining method of fabricating the spacer structure utilizing a photosensitive precursor material which is selectively irradiated, developed and etchingly processed to produce shaped standoff elements for a unitary spacer structure. The spacer structure may be dimensionally fabricated to precisely align with a selected pixel region, comprising a single pixel or an array of pixels, e.g., a color (red, blue, green) triad.

Abstract: A method of making a microstructural shaped article from a high hardness substrate workpiece, in which an energy-transmissive shaping member is secured in energy-transmissive relationship to an energy source, and the substrate workpiece is positioned in alignment therewith. A fine grain slurry of solid particles is provided between the energy-transmissive shaping member and the substrate, and the substrate workpiece is milled by the energy-transmissive shaping member in compressive bearing relationship to the substrate through the fine grain slurry of solid particles, for sufficient time to form the desired shape in the substrate workpiece. A reusable, tribologically enhanced die is also described, for use in the method of the invention. The energy source may be an electroacoustic energy source or an electric power energy source. The non-etched microstructural articles of the invention include knives, saws, and other instruments useful for ocular and other surgical applications.

Abstract: A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

Abstract: A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

Abstract: A field emitter device for selective emission of an electron and/or ion beam comprising a substrate member having an array of field emitter elements thereon, in which the field emitter elements and/or substrate member have a varied conformation producing a beam of appropriate focused and/or directional character. Also disclosed is a display article for producing an output in response to impingement of electron beams thereon, comprising a substrate member on which is disposed an array of phosphor elements, with a diamond-like film coated on the phosphor elements to maintain the phosphor elements in position on the substrate member. Also disclosed is a field emission apparatus comprising such field emitter device and display article, such as a flat panel display.

Abstract: A field emitter array magnetic sensor (FEAMS) device, comprising: an anode; a base plate member having on a first side thereof a plurality of gated field emitter elements thereon, in spaced proximal relationship to the anode. The plurality of gated field emitter elements and the anode structure are arranged so that each of the gated field emitter elements is in electron emitting relationship to varying electron impingement sites depending on intensity of the magnetic field on the gated field emitter element. The device includes structure for sensing the locations of the anode structure electron impingement sites receiving electrons from the plurality of gated field emitter elements, and determining the strength and orientation of the magnetic field. Also disclosed are various anode configurations which may be usefully employed in the FEAMS device of the invention.

Abstract: A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

Abstract: A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.

Abstract: A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.