Abstract: A method for manufacturing raised contacts on the surface of an electronic component includes bonding one end of a wire to an area, such as a terminal, of the electronic component, and shaping the wire into a wire stem configuration (including straight, bent two-dimensionally, bent three-dimensionally). A coating, having one or more layers, is deposited on the wire stem to (i) impart resilient mechanical characteristics to the shaped wire stem and (ii) more securely attach ("anchor") the wire stem to the terminal. Gold is one of several materials described that may be selected for the wire stem. A variety of materials for the coating, and their mechanical properties, are described. The wire stems may be shaped as loops, for example originating and terminating on the same terminal of the electronic component, and overcoated with solder. The use of a barrier layer to prevent unwanted reactions between the wire stem and its environment (e.g., with a solder overcoat) is described.

Abstract: By segregating at least a substantial portion of the power connections to the space transformer component (506, 700, 800) from the signal connections thereto, constraints on the interposer component (504) may be relaxed. This is particularly advantageous in the context of probing one or more high power semiconductor components. The technique of the present invention provides for a plurality of signals (including power and ground) to be inserted into an electronic component such as a space transformer both from a one main surface thereof and an edge (periphery) thereof to an opposite main surface thereof. The space transformer includes pads (522, 706, 810) for engaging, by means of spring elements (524), component (508) to be tested and includes exposed edge pads (750, 804, 854) for engagement by a flexible cable (752) for transmission of power and ground signals to the space transformer.

Abstract: Spring contact elements are fabricated at areas on an electronic component remote from terminals to which they are electrically connected. For example, the spring contact elements may be mounted to remote regions such as distal ends of extended tails (conductive lines) which extend from a terminal of an electronic component to positions which are remote from the terminals. In this manner, a plurality of substantially identical spring contact elements can be mounted to the component so that their free (distal) ends are disposed in a pattern and at positions which are spatially-translated from the pattern of the terminals on the component. The spring contact elements include, but are not limited to, composite interconnection elements and plated-up structures. The electronic component includes, but is not limited to, a semiconductor device, a memory chip, a portion of a semiconductor wafer, a space transformer, a probe card, a chip carrier, and a socket.

Abstract: According to one aspect of the invention, a plating system is provided which includes a tank for containing a plating solution, a substrate holder, and a temperature control device. The substrate holder is configured to support a substrate in position so that at least a first face of the substrate is exposed to the plating solution in the tank. The temperature control device provides selective control of temperature in various regions of the substrate during plating so as to control plating over the first face of the substrate.

Abstract: Temporary connections to spring contact elements extending from an electronic component such as a semiconductor device are made by urging the electronic component, consequently the ends of the spring contact elements, vertically against terminals of an interconnection substrate, or by horizontally urging terminals of an interconnection substrate against end portions of the spring contact elements. A variety of terminal configurations are disclosed.

Abstract: Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

Abstract: Interconnection elements for electronic components, exhibiting desirable mechanical characteristics (such as resiliency, for making pressure contacts) are formed by shaping an elongate element (core) of a soft material (such as gold) to have a springable shape (including cantilever beam, S-shape, U-shape), and overcoating the shaped elongate element with a hard material (such as nickel and its alloys), to impart a desired spring (resilient) characteristic to the resulting composite interconnection element. A final overcoat of a material having superior electrical qualities (e.g., electrical conductivity and/or solderability) may be applied to the composite interconnection element. The elongate element may be formed from a wire, or from a sheet (e.g., metal foil).

Abstract: A plurality of free-standing resilient contact structures (spring elements) are mounted to a surface of a carrier substrate. The carrier substrate is mounted to a surface of a semiconductor device, or one or more unsingulated semiconductor dies. Bond pads of the semiconductor device are connected to the spring elements by bond wires extending between the bond pads and terminals associated with the spring elements. The carrier substrate is mounted to one or more semiconductor devices prior to the semiconductor devices being singulated from a semiconductor wafer upon which they are formed. Resilience and compliance to effect pressure connections to the semiconductor device are provided by the spring elements extending from the carrier substrate, per se. The carrier substrate is pre-fabricated, by mounting the spring elements thereto prior to mounting the carrier substrate to the semiconductor device(s), or vice-versa.

Abstract: High density packaging of semiconductor devices on an interconnection substrate is achieved by stacking bare semiconductor devices atop one another so that an edge portion of a semiconductor device extends beyond the semiconductor device that it is stacked atop. Elongate interconnection elements extend from the bottommost one of the semiconductor devices, and from the exposed edge portions of the semiconductor devices stacked atop the bottommost semiconductor device. Free-ends of the elongate interconnection elements make electrical contact with terminals of an interconnection substrate, such as a PCB. The elongate interconnection elements extending from each of the semiconductor devices are sized so as to reach the terminals of the PCB, which may be plated through holes. The elongate interconnection elements are suitably resilient contact structures, and may be composite interconnection elements comprising a relatively soft core (e.g., a gold wire) and a relatively hard overcoat (e.g., a nickel plating).

Abstract: Interconnection elements and/or tip structures for interconnection elements may first be fabricated upon sacrificial substrates for subsequent mounting to electronic components. In this manner, the electronic components are not `at risk` during the fabrication process. The sacrificial substrate establishes a predetermined spatial relationship between the interconnection elements which may be composite interconnection elements having a relatively soft elongate element as a core and a relatively hard (springy material) overcoat. Tip structures fabricated on sacrificial substrates may be provided with a surface texture optimized for mounting to any interconnection elements for making pressure connections to terminals of electronic components. Interconnection elements may be fabricated upon such tip structures, or may first be mounted to the electronic component and the tip structures joined to the free-ends of the interconnection elements. Tip structures formed as cantilever beams are described.

Abstract: Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

Abstract: A probe card assembly includes a probe card, a space transformer having resilient contact structures (probe elements) mounted directly to (i.e., without the need for additional connecting wires or the like) and extending from terminals on a surface thereof, and an interposer disposed between the space transformer and the probe card. The space transformer and interposer are "stacked up" so that the orientation of the space transformer, hence the orientation of the tips of the probe elements, can be adjusted without changing the orientation of the probe card. Suitable mechanisms for adjusting the orientation of the space transformer, and for determining what adjustments to make, are disclosed. The interposer has resilient contact structures extending from both the top and bottom surfaces thereof, and ensures that electrical connections are maintained between the space transformer and the probe card throughout the space transformer's range of adjustment, by virtue of the interposer's inherent compliance.

Abstract: A method of stacking electronic components is disclosed. A first electronic component having a first interconnection substrate with a first set of contact pads on at least one surface thereof is provided. At least a first semiconductor device with resilient contact structures mounted thereto is provided. The first semiconductor device is positioned relative to the first electronic component with the resilient contact structures extending therefrom and electrically contacting the first set of contact pads of the first interconnection substrate.

Abstract: An interconnection contact structure assembly including an electronic component having a surface and a conductive contact carried by the electronic component and accessible at the surface. The contact structure includes an internal flexible elongate member having first and second ends and with the first end forming a first intimate bond to the surface of said conductive contact terminal without the use of a separate bonding material. An electrically conductive shell is provided and is formed of at least one layer of a conductive material enveloping the elongate member and forming a second intimate bond with at least a portion of the conductive contact terminal immediately adjacent the first intimate bond.

Abstract: An interconnection contact structure assembly including an electronic component having a surface and a conductive contact carried by the electronic component and accessible at the surface. The contact structure includes an internal flexible elongate member having first and second ends and with the first end forming a first intimate bond to the surface of said conductive contact terminal without the use of a separate bonding material. An electrically conductive shell is provided and is formed of at least one layer of a conductive material enveloping the elongate member and forming a second intimate bond with at least a portion of the conductive contact terminal immediately adjacent the first intimate bond.

Abstract: Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

Abstract: Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

Abstract: The invention relates to making temporary, pressure connections between electronic components and, more particularly, to techniques for performing test and burn-in procedures on semiconductor devices prior to their packaging, preferably prior to the individual semiconductor devices being singulated from a semiconductor wafer.

Abstract: The efficacy of electrical discharges for severing bond wires and/or for forming balls at the ends of bond wires (including bond wires already severed by alternative mechanisms) is improved by performing the electrical discharges in the presence of ultraviolet light. A "spark gap" is formed between an EFO electrode and the wire, one of which serves as the cathode of the spark gap. Preferably, the ultraviolet light is directed at the element serving as the cathode of the spark gap. Providing photoemission at the cathode element of the spark gap stabilizes arc/plasma formation and produces more reliable and predictable results. This technique may be used in conjunction with negative EFO systems or with positive EFO systems, and may benefit from either direct or field-assisted photoemission.

Abstract: The efficacy of electrical discharges for severing bond wires and/or for forming balls at the ends of bond wires (including bond wires already severed by alternative mechanisms) is improved by performing the electrical discharges in the presence of ultraviolet light. A "spark gap" is formed between an EFO electrode and the wire, one of which serves as the cathode of the spark gap. Preferably, the ultraviolet light is directed at the element serving as the cathode of the spark gap. Providing photoemission at the cathode element of the spark gap stabilizes arc/plasma formation and produces more reliable and predictable results. This technique may be used in conjunction with negative EFO systems or with positive EFO systems, and may benefit from either direct or field-assisted photoemission.