Abstract: A data processing device maintains register map information that maps accesses to architectural registers, as identified by instructions being executed, to physical registers of the data processing device. In response to determining that an instruction, such as a speculatively-executing conditional branch, indicates a checkpoint, the data processing device stores the register map information for subsequent retrieval depending on the resolution of the instruction. In addition, in response to the checkpoint indication the data processing device generates new register map information such that accesses to the architectural registers are mapped to different physical registers. The data processing device maintains a list, referred to as a free register list, of physical registers available to be mapped to an architectural registers.

Abstract: A semiconductor tray carrier has a base part and first and second side parts. The first and second side parts are movable between a stowed position and a deployed position in which the side parts extend from the base part to form side walls. Multiple tray carriers can be stacked one upon the other when the side walls are in either the stowed or deployed positions. When stacked in the stowed position, the tray carriers require very little storage space. Windows are provided for attaching details on the contents of the tray carriers.

Abstract: An integrated circuit structure comprises at least one pair of complementary transistors on a substrate. The pair of complementary transistors includes a first transistor and a second transistor. In addition, only one stress-producing layer is on the first transistor and the second transistor and applies tensile strain force on the first transistor and the second transistor. The first transistor has a first channel region, a gate insulator on the first channel region, and a deuterium region between the first channel region and the gate insulator. The second transistor has a germanium doped channel region, as well as the same gate insulator on the germanium doped channel region, and the same deuterium region between the germanium doped channel region and the gate insulator.

Abstract: An integrated circuit with a single-channel input/output (I/O) interface and a multi-channel I/O interface includes functional circuits that operate in different clock domains and a test circuit. For a single-channel I/O interface, the test circuit simulates read/write operations by bypassing the functional circuits and performs electrical characterization of the single-channel I/O interface. For a multi-channel I/O interface, the test circuit configures a plurality of channels of the multi-channel interface in a half-duplex mode and performs electrical characterization using data loop back by bypassing the functional circuits.

Abstract: A control and protection system has a DC terminal (DCT), for connection to a DC bus (DCB), a load terminal (LT) for connection to a LOAD, a ground terminal (GT) for connection to an external ground bus (EGB), and an INPUT terminal for receiving ON/OFF commands. An internal ground bus (IGB) of the system is normally coupled to the EGB via the GT. But if a ground fault disconnects the GT from the EGB, the system automatically couples the IGB to the LT, thereby providing a synthetic ground that facilitates continued operation of the system and any peripheral circuits coupled between the DCB and the GT. Any peripheral circuit current passing through the system to the EGB is prevented from causing improper operation of the LOAD by automatically adjusting a series impedance that it passes through between the GT and the LT before reaching the LOAD and EGB.

Abstract: Error correction code (ECC) checkbits are generated for each write access to a memory address based on both the data to be written (the write data) and the memory address. The ECC checkbits are stored with the write data at the memory device associated with the memory address. In addition, the memory device can selectively perform error detection and correction for write accesses using the ECC checkbits. For example, the memory device can include an ECC control register that stores control information to selectively enable and disable error detection and correction for write accesses. In an embodiment, error detection and correction can be selectively enabled and disabled for different sizes of write data.

Abstract: A method for making a semiconductor device is provided which includes (a) providing a layer stack comprising a semiconductor layer (211) and a dielectric layer (209) disposed between the substrate and the semiconductor layer, (b) creating a trench (210) which extends through the semiconductor layer and which exposes a portion of the dielectric layer, the trench having a sidewall, (c) creating a spacer structure (221) which comprises a first material and which is adjacent to the sidewall of the trench, and (d) forming a stressor layer (223) which comprises a second material and which is disposed on the bottom of the trench.

Abstract: A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions.

Abstract: A device that includes a core and a wrapper. The wrapper includes at least one shared wrapper cell that is shared by a group of core pins that belong to a single clock domain. A method for designing a wrapper. The method includes receiving design information representative of a design of a core, locating a group of mutually independent core pins that belong to a single clock domain; and designing a shared wrapped cell that is shared by the group of core pins.

Abstract: A memory controller comprises a multiplexer, a first-in, first-out memory (FIFO), a comparator, and a detection and adjustment circuit. The multiplexer receives a clock signal, a reference voltage, and a gating signal. The FIFO has a clock input coupled to an output of the multiplexer and a data input that receives data from a memory. The comparator has a first input coupled to an output of the FIFO, and a second input coupled to receive a calibration pattern. The calibration pattern is predetermined to match with a first portion of data from the FIFO, and is predetermined to not match with a second portion of data from the FIFO. The detection and adjustment circuit detects if a transition from the first portion to the second portion occurs within a predetermined time period. If the transition is not detected within the time period, a timing of the gating signal is adjusted.

Abstract: Method and apparatus for designing an integrated circuit, IC, layout by identifying one or more defects in a feature within the IC layout. Determining if an identified defect is improvable. Calculating an improvability metric of the IC layout based on the number of improvable defects and the total number of identified defects.

Abstract: Methods and corresponding systems in an adaptive filter include calculating a signal estimator output using filter coefficients, and calculating an error signal. Next, a coefficient threshold is determined. Thereafter, for each filter coefficient, a first step size is assigned to filter coefficients with a magnitude less than the coefficient threshold, and a second step size is assigned to filter coefficients with a magnitude greater than or equal to the coefficient threshold. Finally, the filter coefficients are updated using the first and second step sizes and the error signal. The coefficient threshold can be selected as the average of the magnitudes of the filter coefficients. Alternatively, the coefficient threshold can be selected as the Mth largest of the filter coefficients ranked in order of magnitude. In one embodiment, the first step size can be less than one and the second step size can be greater than one.

Abstract: To facilitate dynamic lockstep support, replacement states and/or logic used to select particular cache lines for replacement with new allocations in accord with replacement algorithms or strategies may be enhanced to provide generally independent replacement contexts for use in respective lockstep and performance modes. In some cases, replacement logic that may be otherwise conventional in its selection of cache lines for new allocations in accord with a first-in, first-out (FIFO), round-robin, random, least recently used (LRU), pseudo LRU, or other replacement algorithm/strategy is at least partially replicated to provide lockstep and performance instances that respectively cover lockstep and performance partitions of a cache. In some cases, a unified instance of replacement logic may be reinitialized with appropriate states at (or coincident with) transitions between performance and lockstep modes of operation.

Abstract: A pixel data processing apparatus comprises a data path unit comprising a hardware module dedicated to performing, when in use, predetermined functionality in relation to image data. The apparatus also comprises a data store for storing image data and a programmable engine. The programmable engine is arranged to route, when in use, data associated with the image data though the data path unit in a predetermined manner.

Abstract: Cache storage may be partitioned in a manner that dedicates a first portion of the cache to lockstep mode execution, while providing a second (or remaining) portion for non-lockstep execution mode(s). For example, in embodiments that employ cache storage organized as a set associative cache, partition may be achieved by reserving a subset of the ways in the cache for use when operating in lockstep mode. Some or all of the remaining ways are available for use when operating in non-lockstep execution mode(s). In some embodiments, a subset of the cache sets, rather than cache ways, may be reserved in a like manner, though for concreteness, much of the description that follows emphasizes way-partitioned embodiments.

Abstract: Fabrication methods are provided for a sensor device packages. An exemplary fabrication method involves bonding a sensor structure and another structure using a sealing structure. The sealing structure surrounds a diaphragm region of the sensor structure and provides an airtight seal between the sensor structure and the other structure to establish a fixed reference pressure on one side of the diaphragm region.

Abstract: Apparatus and related fabrication methods are provided for a sensor device. The sensor device includes a sensor structure including a first portion having a sensing arrangement formed thereon and a second structure. A sealing structure is interposed between the sensor structure and the second structure, wherein the sealing structure surrounds the first portion of the sensor structure. The sealing structure establishes a fixed reference pressure on a first side of the first portion, and an opposing side of the first portion is exposed to an ambient pressure.

Abstract: An integrated circuit comprises forward error correction (FEC) decoder logic being coupled to memory and arranged to receive data, comprising application data, from a host application process. The FEC decoder logic performs error detection upon the received data. Logic is further arranged to transmit error free application data back to the host application process prior to performing error correction; and store in memory only application data in which errors are detected.

Abstract: An electrically programmable fuse (eFuse) comprises a semiconductor layer, a silicide layer overlying the semiconductor layer, and first and second contact structures electrically coupled to the silicide layer. The first contact structure is configured to function as an anode and the second contact structure is configured to function as a cathode. The eFuse further comprises a back-gate structure disposed underneath the semiconductor layer in a back-gate structure region proximate the second contact structure, the back-gate structure region excluding a region proximate the first contact structure.

Abstract: A method of packaging an electronic device includes providing a patterned dielectric layer with an area sized to receive a first die, and another area sized to receive a second die, placing the first and second dies within the first and second areas, encapsulating the dies with an encapsulating material that has a different composition from the dielectric layer, forming a first signal line between the dies, forming a second signal line to the first die, and forming an additional signal line to the first die. The dielectric layer is disposed between the first signal line and the encapsulating material, the electronic device transmits a signal in an approximate range of 1 GHz to 100 GHz along the second signal line, and a signal that does not exceed approximately 900 MHz along the additional signal line.