Abstract: A store gathering policy is enabled or disabled at a data processing device. A store gathering policy to be implemented by a store buffer can be selected from a plurality of store gathering polices. For example, the plurality of store gathering policies can be constrained or unconstrained. A store gathering policy can be enabled by a user programmable storage location. A specific store gathering policy can be specified by a user programmable storage location. A store gathering policy can be determined based upon an attribute of a store request, such as based upon a destination address.

Abstract: Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first vertical drift region of semiconductor material, a second vertical drift region of semiconductor material, and a buried lateral drift region of semiconductor material that abuts the vertical drift regions. In one or more embodiments, the vertical drift regions and buried lateral drift region have the same conductivity type, wherein a body region of the opposite conductivity type overlies the buried lateral drift region between the vertical drift regions.

Abstract: An integrated circuit comprises clock gating circuitry comprising at least one gating component located within a clock distribution network and arranged to enable at least one part of the clock distribution network to be gated, and gating control circuitry arranged to cause the at least one gating component to disable the at least one part of the clock distribution network upon certain conditions being fulfilled. The clock gating circuitry further comprises clock gating disabling circuitry configurable to enable the gating of the at least one part of the clock distribution network to be disabled.

Abstract: A Quad Flat Pack (QFP) type semiconductor device includes four corner tie bars that, instead of being trimmed, are used for power and/or ground connections, and alternatively, to control mold flow during the encapsulation step of the assembly process.

Abstract: An approach is provided in which a power design verification system retrieves a power intent data corresponding to a power design, which identifies the power design's power modes and power mode transition conditions. The power design verification system selects one of the power mode transition conditions, which identifies input signals that invoke a transition from a first power mode to a second power mode. In turn, the power design verification system generates simulation stimuli based upon the identified input signals and simulates the power design utilizing the generated simulation stimuli accordingly.

Abstract: A method and system for reducing power consumption of an integrated circuit with an EDA tool by analyzing and modifying a layout design having a plurality of nets across multiple metal layers. The method includes identifying long nets in the layout design, determining an interconnect capacitance of each of the long nets, determining a net level switching activity of each of the long nets, generating a high power impact list using the interconnect capacitance and the switching activity of each of the long nets, modifying a metal spacing of the long nets listed in the high power impact list.

Abstract: An analog to digital converter (ADC) includes a clock-halting circuit that is enabled by an externally generated trigger signal. The clock-halting circuit halts an input clock signal to the ADC for a predetermined time period and resumes the input clock signal to the ADC when the predetermined time period ends.

Abstract: An integrated circuit for bias stress condition removal comprising at least one input/output (IO) buffer driver circuit comprising at least one input signal is described. A primary buffer driver stage receives the at least one input signal and providing an output signal in a first time period; and a secondary buffer driver stage receives the at least one input signal and providing an output signal in a second time period. The primary buffer driver stage and the secondary buffer driver stage cooperate and an operational mode of the primary buffer driver stage and an operational mode of the secondary buffer driver stage is varied to produce a varying output signal.

Abstract: A method of making a semiconductor structure includes forming a select gate over a substrate in an NVM portion and a first protection layer over a logic portion. A control gate and a storage layer are formed over the substrate in the NVM portion, wherein the control and select gates have coplanar top surfaces. The charge storage layer is under the control gate, along adjacent sidewalls of the select gate and control gate, and is partially over the top surface of the select gate. A second protection layer is formed over the NVM portion and the logic portion. The second protection layer and the first protection layer are removed from the logic portion leaving a portion of the second protection layer over the control gate and the select gate. A gate structure is formed over the logic portion comprising a high k dielectric and a metal gate.

Abstract: A mechanism for electrically coupling a semiconductor device die to a semiconductor device package substrate that avoids introduction of excessive temperature induced stresses to the semiconductor device die interconnect is provided. In one embodiment, the semiconductor device die is mechanically attached to the package substrate (or another semiconductor device die) at room temperature through the use of a plug-in socket or wedge connection having corresponding mating features formed on the die and substrate. The mechanical interconnect features can be formed on the die and substrate interconnects using an electroplating process. The surfaces of the semiconductor device die and package substrate can then be coupled using an underfill material. A low-temperature solid state bonding process can then be used to diffuse the materials forming the plug and socket features in order to form the electrical connection.

Abstract: An integrated circuit includes a device of a first conductivity type formed in a first well; a voltage regulator configured to provide a bias voltage to the first well based on a first reference voltage which is generated using a first band gap reference generator; and a monitor circuit configured to compare a voltage of the first well to an upper limit and a lower limit of a first voltage range, wherein each of the upper limit and lower limit is provided using a second band gap reference generator, separate from the first band gap reference generator, wherein, in response to determining that the voltage of the first well is outside of the first voltage range, providing a first out of range indicator.

Abstract: A battery charging circuit comprises: a first voltage regulator, wherein the first voltage regulator has a control input designed for reception of a signal generated by a current metering circuit; the current metering circuit; and a terminal for connecting a battery. An electronic device, in particular a mobile device, comprises a battery charging circuit as defined above.

Abstract: An integrated circuit includes first and second memory cells including a first pull-up transistor each having a body tie coupled to respective first and second well bias voltages. Drain electrodes of the first and second pull-up transistors are coupled to a first true bit line and a first complementary bit line, respectively. A second memory cell includes first and second pull-up transistors each having a body tie coupled to the second and first well bias voltages, respectively. Drain electrodes of the first and second pull-up transistors are coupled to a second true bit line and a second complementary bit line, respectively. The first well bias voltage is lower than the second well bias voltage during a Read-Only Memory (ROM) mode, and the first well bias voltage is the same as the second well bias voltage during a Static Random Access Memory (SRAM) mode.

Abstract: Etch stabilizing ions (37) are introduced, e.g., by ion implantation (34), into a portion (36) of a substrate (20) underlying an etch window (24) in a masking layer (22) covering the substrate (20), where a trench (26) is desired to be formed. When the portion (36) of the substrate (20) containing the etch stabilizing ions (37) is etched to form the trench (26), the etch stabilizing ions (37) are progressively released at the etch interface (28?) as etching proceeds, substantially preventing gas micro-bubbles or other reaction products at the etch interface (28?) from disrupting etching. Using this method (700), products containing trenches (26) are much more easily formed and such trenches (26) have much smoother interior surface (28).

Abstract: An electrostatic discharge protection clamp adapted to limit a voltage appearing across protected terminals of an integrated circuit to which the electrostatic discharge protection clamp is coupled is presented. The electrostatic discharge protection clamp includes a substrate, and a first electrostatic discharge protection device formed over the substrate. The first electrostatic discharge protection device includes a buried layer formed over the substrate, the buried layer having a first conductivity type and defining an opening located over a region of the substrate, a first transistor formed over the opening of the buried layer, the first transistor having an emitter coupled to a first cathode terminal of the electrostatic discharge protection clamp, and a second transistor formed over the buried layer, the second transistor having an emitter coupled to a first anode terminal of the electrostatic discharge protection clamp.

Abstract: A push-push oscillator circuit with a first oscillation branch with a first active device and a first tank adapted to provide a signal having a fundamental frequency f0, a second oscillation branch with a second active device and a second tank symmetrical to the first oscillation branch and adapted to provide a signal having the fundamental frequency f0. Output branches are coupled to the first oscillation branch and the second oscillation branch to provide signals having the second harmonic frequency 2f0 of the fundamental signal based on the signals having the fundamental frequency f0 and/or to provide signals having the fundamental frequency f0; The push-push oscillator circuit further comprises at least one terminal branch with a terminal adapted to provide a component of a differential signal having the second harmonic frequency 2f0 or the fundamental frequency f0. The at least one terminal branch comprises a RF stub.

Abstract: A sense amplifier is configured to sense a current from a selected bit cell of a non-volatile memory array and compare the sensed current to a reference current to determine a logic state stored in the bit cell. A controller is configured to perform a program/erase operation on at least a portion of the memory array to change a logic state of at least one bit cell of the portion of the memory array; determine a number of program/erase pulses applied to the at least one bit cell during the program/erase operation to achieve the change in logic state; and when the number of program/erase pulses exceeds a pulse count threshold, adjust the reference current of the sense amplifier for a subsequent program/erase operation.

Abstract: A technique for detecting a leaky bit of a non-volatile memory includes erasing cells of a non-volatile memory. A bias stress is applied to the cells subsequent to the erasing. An erase verify operation is performed on the cells subsequent to the applying a bias stress to the cells. Finally, it is determined whether the cells pass or fail the erase verify operation based on whether respective threshold voltages of the cells are below an erase verify level.

Abstract: Temperature dependent biasing for leakage power reduction. In some embodiments, a semiconductor device may include a biasing circuit configured to generate a voltage that varies dependent upon a temperature of the semiconductor device and a logic circuit operably coupled to the biasing circuit, where the voltage is applied to a bulk terminal of one or more transistors within the logic circuit, and where the voltage has a value outside of a voltage supply range of the logic circuit. In another embodiment, a semiconductor device may include a biasing circuit configured to generate a voltage that varies according to a temperature of the semiconductor device and a power switch operably coupled to the biasing circuit, where the voltage is applied to a gate terminal of the power switch, and where the voltage has a value outside of a voltage supply range of the power switch.

Abstract: An electronic device comprising a first power switch connectable or connected between a first voltage source and a load is proposed. The first power switch assumes a conductive state in response to a power-on request and a non-conductive state in response to a power-off request, for energizing and deenergizing the load, so that a voltage across the first power switch tends to a positive high level when the first power switch is in the non-conductive state and to a positive low level when the first power switch is in the conductive state. The device further comprises a second power switch connectable or connected between a second voltage source and the load. The second power switch assumes a conductive state in response to the power-on request and a non-conductive state when the voltage across the first power switch is below a defined switch-off threshold lower than the high level. The second voltage source thus assists the first voltage source in powering up the load.