Abstract: A method and system for booting an electronic device from a NAND flash memory includes a NAND flash controller that receives an event trigger for fetching a pre-boot code stored in the NAND flash memory. Based on the event trigger type, booting parameters are loaded into the controller including a boot frequency of the NAND flash memory. The controller searches for a good memory block in which the pre-boot code is stored by checking the first and second or the first and last pages of a memory block and fetches a portion or the entire pre-boot code based on the event trigger type at the boot frequency.

Abstract: A phase shifter with selectable phase shift and comprises a switchable phase shifting element that includes a first and second signal path coupled between an input and an output and providing a, respective, first and second phase shift for a signal coupled through the respective signal paths; a switch circuit for selecting between the first and second signal paths where the first and second signal paths and the switch circuit are configured to equalize the insertion loss for the first and second signal path, the phase shifter further including control circuit for controlling the switch circuit.

Abstract: A semiconductor device includes a first substrate having opposing first and second main surfaces, a first die disposed on the first main surface of the first substrate, a first bond wire coupled to the first die, a first packaging material encapsulating the first die and the first bond wire, and a lead frame disposed on the first main surface of the first substrate and in electrical communication with the first bond wire. At least a portion of the lead frame extends outside of the packaging material. A top package includes first and second main surfaces and an electrical contact on the second main surface. The electrical contact is electrically connected to the lead frame and connects the top package to either the first die and/or external circuitry.

Abstract: Complex on-chip interconnect fabrics, particularly those that include point-to-point interconnects and coherent routing networks, can present significant challenges for conventional trace techniques that may be applied in an effort to efficiently provide an external debugger with visibility into on-chip interconnect transactions. Embodiments described herein generate and supply separate in-circuit-trace messages including address messages and data messages, which are sent out (i.e., off-chip) to external debug tools generally without delay and coincident with the distinct, but related, trace events within address and data paths of the interconnect fabric. These separate message instances embed appropriate tag and mark values to allow the message instances to be post-processed and correlated by the external debug tools so as to reconstruct the transaction information for operations performed in the on-chip interconnect.

Abstract: A device structure includes an inter-level dielectric, a via, a first conductive trench, and a second conductive trench. The inter-level dielectric has a top surface and a bottom surface. The via extends from the top surface to the bottom surface. The first conductive trench extends from the top surface to a first depth below the top surface. The second conductive trench extends from the top surface to a second depth below the top surface, wherein the second depth is above the bottom surface and below the first depth.

Abstract: A method for increasing metal density around selected vias in a semiconductor device is provided. The semiconductor device includes a plurality of vias. The method includes: generating a layout database for the semiconductor device; identifying isolated vias of the plurality of vias; selecting the isolated vias; defining a zone around each of the selected isolated vias; and increasing area of a metal layer which is above the selected isolated via and which encloses the selected isolated via within each zone to achieve a target metal density within the zone. The method improves reliability of the semiconductor device by allowing moisture to vent from around the vias.

Abstract: A level shifter includes a static precharge circuit. During a precharge phase, two nodes of the level shifter are precharged to a voltage at or near a reference voltage. During an evaluate phase, the level shifter maintains one of the nodes at the precharge voltage, while the other node is pulled to a different voltage level, such as at or near a ground voltage level, wherein the node that is maintained is selected based on the state of data input signals of the level shifter. The voltage at the nodes determines the state of the level shifter output signals, such that the output signals represent the input signals at a shifted voltage level. The level shifter can include a capacitor to feed forward a signal that causes the precharging to terminate more quickly.

Abstract: Error correction code (ECC) checkbits are generated for each write access to a memory address based on both the data to be written (the write data) and the memory address. The data processing device employs multiple-mapped or multi-port memory, whereby different memory addresses can be associated with the same memory location. To generate the ECC checkbits the data processing device selects a mask for each write access based on the write address and determines the ECC checkbits based on the write data, the write address, and the mask.

Abstract: A system for creating logical RLC and MAC PDUs in a mobile communication system includes first and second remote network entities that communicate using the LTE link-layer protocol. The first and second remote network entities include first and second layer-2 protocol stacks, respectively. The first layer-2 protocol stack includes first PDCP, RLC and MAC sub-layers and the second layer-2 protocol stack includes second PDCP, RLC and MAC sub-layers. During transmission of data from the first remote network entity to the second remote network entity, the logical RLC and MAC PDUs are created by the first RLC and MAC sub-layers by populating logical RLC and MAC PDU structures.

Abstract: A state retention power gated cell includes a logic cell arranged in two or more rows. The logic cell has an active layer including at least a first well and a second well disposed in first and second rows, respectively. In a normal operation mode, the first well is powered with a first bias voltage, the second well is powered with a second bias voltage, the first power supply line is powered with VDDC, and the second power supply line is powered with VDD. In a standby mode, the first well preferably is powered down, the second well is powered with the second bias voltage, the first power supply line is powered with VDDC, and the second power supply line is powered down.

Abstract: In a data processing system having a plurality of error coding function circuitries, a method includes receiving an address which indicates a first storage location for storing a first data value; using a first portion of the address to select one of the plurality of error coding function circuitries as a selected error coding function circuitry; and using the selected error coding function circuitry to generate a first checkbit value, wherein the selected error coding function circuitry uses the first data value to generate the first checkbit value. When the first portion of the address has a first value, a first one of the plurality of error coding function circuitries is selected as the selected error coding function circuitry. When the first portion of the address has a second value, a second one of the plurality of error coding function circuitries is selected as the selected error coding function circuitry.

Abstract: Embodiments of a system and method are disclosed that can include a memory unit, and a memory management unit coupled to the memory unit. The memory management unit can include address mapping circuitry and access control circuitry operable to: provide address mappings for at least a frame stack and a link stack in the memory unit for programs being executed by the processing unit, and provide an access permission indicator applicable to any segment of the memory unit. A processing unit can save context information for a program to the frame stack, and execute a savelink instruction subsequent to the execution of a branch and link instruction. If the access permission indicator is set, the savelink instruction saves to the link stack a return address provided by the branch and link instruction.

Abstract: Systems and methods for low-power voltage tamper detection are described. In some embodiments, an integrated circuit may include source-follower circuitry configured to produce a scaled down supply voltage. The integrated circuit may also include undervoltage detection circuitry coupled to the source-follower circuitry, the undervoltage detection circuitry configured to output a first signal having a first logic value if the scaled down supply voltage is greater than a low threshold voltage or a second logic value if the scaled down supply voltage is smaller than the low threshold voltage. Additionally or alternatively, the integrated circuit may include overvoltage detection circuitry coupled to the source-follower circuitry, the overvoltage detection circuitry configured to output a second signal having the first logic value if the scaled down supply voltage is smaller than a high threshold voltage or the second logic value if the scaled down supply voltage is greater than the high threshold voltage.

Abstract: A processing system comprises a processing device; a first instruction set encoded in a first encoding space and comprising one or more first instructions; a second instruction set encoded in a second encoding space different from the first encoding space and comprising two or more orthogonal second instructions; and an instruction encoder arranged to encode and encapsulate subsets of the second instructions in instruction containers, each instruction container sized to comprise a plurality of the second instructions.

Abstract: A method of generating an instrumented code from a program code executable on a programmable target is described. The method comprises analysing the program code to detect a loop nest with regular memory access in the program code, providing a record of static memory address information associated with the loop nest, and instrumenting the program code to provide an instrumented code corresponding to the program code supplemented with an instrumentation instruction to output an information message comprising a dynamic memory address information field formatted to store a dynamic memory address information associated with the loop nest.

Abstract: A Quad Flat Package (QFP) semiconductor device has a multi-stepped lead frame for forming rows of external contacts. A semiconductor die is attached to a die pad of the lead frame and electrically connected to lead with bond wires. The die and bond wires are encapsulated with a mold compound and then multiple cuts are made to the lead frame to form the rows of external contacts.

Abstract: A timer to provide pulses at a comparator output wherein a frequency of the pulses is dependent on temperature, wherein providing each pulse includes biasing a first input of the comparator at a voltage and operating a transistor in a subthreshold region of operation to change the voltage of the first input of a comparator at a rate dependent upon temperature. The output of the comparator changes state when the voltage of the first input crosses a voltage of a second input of the comparator.

Abstract: An n-bit counter is formed from cascading counter sub-modules. The counter includes combinatorial control logic coupled to a lower order counter sub-module. The control logic is arranged to clock gate at least one higher order counter sub-module dependent on a logical combination of outputs of the lower order counter sub-module and where the control logic uses pipelining to store at least one previous control logic output for use in determining a later control logic output.

Abstract: An anti-counterfeiting security circuit is incorporated into an authentic integrated circuit device to induce failure in a counterfeited integrated circuit device by forming the security circuit (e.g., 21, 31, 41, 51) with one or more operatively inert high-k metal gate transistors (e.g., HKMG PMOS 112) having switched or altered work function metal layers (82) where the security circuit defines a first electrical function with the one or more operatively inert high-k metal gate transistors and defines a second different electrical function if the one or more operatively inert high-k metal gate transistors were instead fabricated as operatively functional high-k metal gate transistors of the first polarity type with a work function metal layer of the first polarity type, the security circuit would define a second different electrical function.

Abstract: An area-efficient, high voltage, single polarity ESD protection device (300) is provided which includes an p-type substrate (303); a first p-well (308-1) formed in the substrate and sized to contain n+ and p+ contact regions (310, 312) that are connected to a cathode terminal; a second, separate p-well (308-2) formed in the substrate and sized to contain only a p+ contact region (311) that is connected to an anode terminal; and an electrically floating n-type isolation structure (304, 306, 307-2) formed in the substrate to surround and separate the first and second semiconductor regions. When a positive voltage exceeding a triggering voltage level is applied to the cathode and anode terminals, the ESD protection device triggers an inherent thyristor into a snap-back mode to provide a low impedance path through the structure for discharging the ESD current.