Abstract: A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430?a?0.460, 0.433?b?0.479, 0.040?c?0.070, 0.0125?d?0.0650, 0.0015?e?0.0092, 0.9×3e?c?d?1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Abstract: Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Nax+s(1?y)(BiwBa1?s?w)1?yNbyTi1?yO3 (where 0.84?x?0.92, 0.84?y?0.92, 0.002?(w+s)(1?y)?0.035, and 0.9?w/s?1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

Abstract: The invention provides a gold-supporting catalyst comprising gold nanoparticles and a carrier consisting of porous ceramic obtained by firing a mixture comprising an aluminum compound, a lime component, and a plastic clay containing 1% by mass or less of feldspars and quartz, wherein the gold nanoparticles are supported in an amount of 0.01 to 10 parts by mass on the carrier based on 100 parts by mass of the carrier.

Abstract: A vaporizing/discharging container 100 is provided that can properly vaporize and discharge a volatile substance in use, and prevent tampering by children, etc. The vaporizing/discharging container 100 for vaporizing and discharging a volatile substance into the outside, includes a main body 10 configured to contain the volatile substance, and a closure member 20 having a vapor discharging hole 21 for the volatile substance, and configured to be screwed and attached onto the main body 10. A pair of temporary lock mechanisms 30 (31, 32) configured to engage with each other so that resistance occurs against a direction in which the closure member 20 is rotated backward after the closure member 20 is screwed onto the main body 10, are provided between the closure member 20 and the main body 10, and at least one of the temporary lock mechanisms 30 (31, 32) is formed in the shape of steps.

Abstract: There is disclosed a method for forming a CNT film. In the method, the CNT film is formed by applying a dispersion liquid including CNT and a silica colloid onto a base material and drying the dispersion liquid.

Abstract: [Problem] To provide a method for producing a colloidal crystal, wherein the method is easily controlled and is capable of dealing with a wide range of types of colloidal particle. [Solution] The method for producing a colloidal crystal in the present invention is characterized by comprising a preparation step of preparing a colloidal dispersion liquid, in which colloidal particles are dispersed in a liquid comprising an ionic surfactant and a colloidal crystal can be formed due to temperature changes, and a crystallization step of formation of a colloidal crystal by changing the temperature of the colloidal dispersion liquid from a temperature region in which the colloidal crystal is not formed to a temperature region in which the colloidal crystal is formed.

Abstract: Provided is a lead-free piezoelectric material having a satisfactory and stable piezoelectric constant and electric insulation property in a wide practical temperature range. Provided is a piezoelectric material, including a perovskite-type metal oxide represented by the following general formula (1) as a main component, the piezoelectric material containing Mn in a content of 0.01 part by weight or more and 0.80 part by weight or less with respect to 100 parts by weight of the perovskite-type metal oxide: (Li?xNa?yK?zBa?Bi0.5?+?)a(Ti?+?Fe?) O3 . . . (1), where 0.800???0.999, 0???0.150, 0.001???0.050, ?+?+?=1, 0?x?0.050, 0.045?y?0.450, 0.045?z?0.450, 0.450?x+y+z?0.500, and 0.980?a?1.020.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for colloidal crystal production comprises: preparing a colloidal polycrystal dispersion in which colloidal crystals precipitate at a given temperature (preparation step); introducing into a vessel The colloidal polycrystal dispersion in the state of containing fine colloidal polycrystals precipitated (introduction step); and melting the colloidal polycrystals and then recrystallizing the molten polycrystals (recrystallization step). The crystals thus obtained have fewer lattice defects and less unevenness than the original polycrystals.

Abstract: A childproof perfume bottle including a bottle body and a bottle cap covering the bottle body. The bottle body includes an upper connection part including an external wall including a male screw. The bottle cap includes an internal wall including a female screw matching the male screw of the external wall. The external wall of the upper connection part includes a bulge, and a stop piece is disposed at one end of the bulge. The internal wall of the bottle cap includes a clamping block which is capable of tightly fitting the bulge of the external wall after revolving the bottle cap to a certain angle.

Abstract: Provided is a lead-free piezoelectric material having a satisfactory and stable piezoelectric constant and electric insulation property in a wide practical temperature range. Provided is a piezoelectric material, including a perovskite-type metal oxide represented by the following general formula (1) as a main component, the piezoelectric material containing Mn in a content of 0.01 part by weight or more and 0.80 part by weight or less with respect to 100 parts by weight of the perovskite-type metal oxide: (Li?xNa?yK?zBa?Bi0.5?+?)a(Ti?+?Fe?) O3 . . . (1), where 0.800???0.999, 0???0.150, 0.001???0.050, ?+?+?=1, 0?x?0.050, 0.045?y?0.450, 0.045?z?0.450, 0.450?x+y+z?0.500, and 0.980?a?1.020.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: [Problem] To provide a method for producing a colloidal crystal, wherein the method is easily controlled and is capable of dealing with a wide range of types of colloidal particle. [Solution] The method for producing a colloidal crystal in the present invention is characterized by comprising a preparation step of preparing a colloidal dispersion liquid, in which colloidal particles are dispersed in a liquid comprising an ionic surfactant and a colloidal crystal can be formed due to temperature changes, and a crystallization step of formation of a colloidal crystal by changing the temperature of the colloidal dispersion liquid from a temperature region in which the colloidal crystal is not formed to a temperature region in which the colloidal crystal is formed.

Abstract: A bottle, including: a bottle body, the bottle body including a first opening and an inner cavity; a bottle cap, the bottle cap including a through hole; a bottle stopper, the bottle stopper including a plurality of holes. The bottle cap is disposed on the bottle body; the through hole is arranged on a top of the bottle cap; the bottle stopper is inserted into the first opening for sealing; and the holes are in communication with the inner cavity of the bottle body.

Abstract: There is are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1?x)Lax (ZryTi1?y) O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: A strip-shaped handle part is formed with divided handle halves attached to opposite ends of a strip separate from a drinking water bottle, and then wound around and secured to the drinking water bottle, thereby reducing the proportion of defective bottles and extending the useful life of the handled drinking water bottle. In addition, material separation at the time of disposal of the handled drinking water bottle for recycle is facilitated. Further, when a cushion material which doubles as a slip stopper is provided on the surface of the strip-shaped handle part which contacts the drinking water bottle, looseness between the attached handle and the drinking water bottle and displacement of the handle is prevented and the durability of the handled drinking water bottle is improved.

Abstract: There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1?x)Lax(ZryTi1?y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.