Abstract: The present invention provides an acrylic resin composition containing a polycrystal of colloidal particles of silicon oxide in an acrylic resin that is formed by curing an acrylic monomer liquid at room temperature and/or an acrylic oligomer liquid at room temperature, wherein a mean distance between the colloidal particles in the polycrystal is 140 to 330 nm. The size of the single crystal that constitutes the polycrystal can be controlled by adjusting the content of silicon oxide and/or the additive amount of impurities. An architectural material, a fashion accessory, and an optical material are provided that are formed by using the acrylic resin composition.
Type:
Application
Filed:
August 19, 2010
Publication date:
June 7, 2012
Applicants:
FUJI CHEMICAL CO., LTD., KYOCERA CORPORATION
Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.
Type:
Application
Filed:
March 10, 2011
Publication date:
September 15, 2011
Applicants:
CANON KABUSHIKI KAISHA, FUJI CHEMICAL CO., LTD.
Abstract: Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for colloidal crystal production comprises: preparing a colloidal polycrystal dispersion in which colloidal crystals precipitate at a given temperature (preparation step); introducing into a vessel The colloidal polycrystal dispersion in the state of containing fine colloidal polycrystals precipitated (introduction step); and melting the colloidal polycrystals and then recrystallizing the molten polycrystals (recrystallization step). The crystals thus obtained have fewer lattice defects and less unevenness than the original polycrystals.
Type:
Application
Filed:
April 30, 2009
Publication date:
May 26, 2011
Applicants:
NAGOYA CITY UNIVERSITY, FUJI CHEMICAL CO., LTD.
Abstract: A strip-shaped handle part is formed with divided handle halves attached to opposite ends of a strip separate from a drinking water bottle, and then wound around and secured to the drinking water bottle, thereby reducing the proportion of defective bottles and extending the useful life of the handled drinking water bottle. In addition, material separation at the time of disposal of the handled drinking water bottle for recycle is facilitated. Further, when a cushion material which doubles as a slip stopper is provided on the surface of the strip-shaped handle part which contacts the drinking water bottle, looseness between the attached handle and the drinking water bottle and displacement of the handle is prevented and the durability of the handled drinking water bottle is improved.
Abstract: A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.
Type:
Grant
Filed:
April 30, 2007
Date of Patent:
November 25, 2008
Assignees:
Canon Kabushiki Kaisha, Fuji Chemical Co, Ltd.
Abstract: There is disclosed a piezoelectric thin film having less non-uniform portion and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.
Type:
Application
Filed:
June 2, 2008
Publication date:
September 25, 2008
Applicants:
CANON KABUSHIKI KAISHA, FUJI CHEMICAL CO. LTD
Abstract: A piezoelectric element including a vibrating plate, a lower electrode, a piezoelectric film and an upper electrode laminated in this order, wherein the lower electrode, the upper electrode and the piezoelectric film are formed by a perovskite type oxide while the vibrating plate is formed by a metal oxide, and a junction interface is substantially absent between the vibrating plate and the lower electrode, between the lower electrode and the piezoelectric film and between the piezoelectric film and the upper electrode.
Type:
Grant
Filed:
August 30, 2004
Date of Patent:
July 15, 2008
Assignees:
Canon Kabushiki Kaisha, Fuji Chemical Co. Ltd
Abstract: There is disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.
Type:
Grant
Filed:
February 23, 2005
Date of Patent:
July 15, 2008
Assignees:
Canon Kabushiki Kaisha, Fuji Chemical Co. Ltd
Abstract: A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.
Type:
Application
Filed:
April 30, 2007
Publication date:
November 15, 2007
Applicants:
CANON KABUSHIKI KAISHA, FUJI CHEMICAL CO., LTD
Abstract: There is disclosed a piezoelectric thin film having less non-uniform portion and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.
Type:
Application
Filed:
February 23, 2005
Publication date:
May 3, 2007
Applicants:
CANON KABUSHIKI KAISHA, FUJI CHEMICAL CO. LTD.
Abstract: In a piezoelectric element having a piezoelectric film sandwiched between a lower electrode and an upper electrode, the lower electrode and/or the upper electrode and the piezoelectric film comprise perovskite oxide and a contact interface between the lower electrode and/or the upper electrode and the piezoelectric film does not exist and a region where crystals of the lower electrode and/or the upper electrode and crystals of the piezoelectric film are mixed exists between the lower electrode and/or the upper electrode and the piezoelectric film.
Type:
Grant
Filed:
September 16, 2003
Date of Patent:
March 6, 2007
Assignees:
Canon Kabushiki Kaisha, Fuji Chemical Co. Ltd
Abstract: A composition for forming a piezoelectric containing a dispersoid obtained from metallic compound, wherein the content of hafnium in the composition is 3,000 ppm or less.
Type:
Grant
Filed:
September 22, 2003
Date of Patent:
June 13, 2006
Assignees:
Canon Kabushika Kaisha, Fuji Chemical Co., Ltd.
Abstract: A composition for forming a piezoelectric film containing a dispersoid obtained from a metallic compound includes at least one of 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]non-5-ene, and 1,4-diazabicyclo[2.2.2]octane.
Type:
Grant
Filed:
September 22, 2003
Date of Patent:
May 2, 2006
Assignees:
Canon Kabushiki Kaisha, Fuji Chemical Co., Ltd.
Abstract: The invention provides a method for manufacturing a piezoelectric element including a coating step of coating a substrate with a coating liquid for forming the piezoelectric element thereby forming a coated film, a drying step of drying the coated film, a preliminary sintering step of preliminarily sintering the coated film thereby forming an oxide film, a final sintering step of finally sintering the oxide film thereby forming a piezoelectric film, and a cooling step of cooling the piezoelectric film, wherein the steps are executed in the presence of a moisture-containing gas; in the coating step the substrate has a temperature equal to or less than 50° C. and the moisture-containing gas has a relative humidity of 60% RH or less at 25° C.; in the drying step, the substrate has a temperature equal to or less than 200° C. and the relative humidity is 10 to 70% RH; in the preliminary sintering step the substrate has a temperature of 200 to 450° C.
Type:
Grant
Filed:
September 22, 2003
Date of Patent:
April 26, 2005
Assignees:
Canon Kabushiki Kaisha, Fuji Chemical Co. Ltd.
Abstract: A piezoelectric element including a vibrating plate, a lower electrode, a piezoelectric film and an upper electrode laminated in this order, wherein the lower electrode, the upper electrode and the piezoelectric film are formed by a perovskite type oxide while the vibrating plate is formed by a metal oxide, and a junction interface is substantially absent between the vibrating plate and the lower electrode, between the lower electrode and the piezoelectric film and between the piezoelectric film and the upper electrode.
Type:
Application
Filed:
August 30, 2004
Publication date:
April 21, 2005
Applicants:
CANON KABUSHIKI KAISHA, FUJI CHEMICAL CO. LTD.
Abstract: A composition for forming a piezoelectric film containing a dispersoid obtained from a metallic compound includes at least one of 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]non-5-ene, and 1,4-diazabicyclo[2.2.2]octane.
Type:
Application
Filed:
September 22, 2003
Publication date:
July 8, 2004
Applicants:
Canon Kabushiki Kaisha, Fuji Chemical Co. Ltd.
Abstract: The invention provides a method for manufacturing a piezoelectric element including a coating step of coating a substrate with a coating liquid for forming the piezoelectric element thereby forming a coated film, a drying step of drying the coated film, a preliminary sintering step of preliminarily sintering the coated film thereby forming an oxide film, a final sintering step of finally sintering the oxide film thereby forming a piezoelectric film, and a cooling step of cooling the piezoelectric film, wherein the steps are executed in the presence of a moisture-containing gas; in the coating step the substrate has a temperature equal to or less than 50° C. and the moisture-containing gas has a relative humidity of 60% RH or less at 25° C.; in the drying step, the substrate has a temperature equal to or less than 200° C. and the relative humidity is 10 to 70% RH; in the preliminary sintering step the substrate has a temperature of 200 to 450° C.
Type:
Application
Filed:
September 22, 2003
Publication date:
July 8, 2004
Applicants:
Canon Kabushiki Kaisha, Fuji Chemical Co. Ltd.
Abstract: A composition for forming piezoelectric film comprising a dispersoid obtained from a metal compound, wherein the total content of the elemental halogens, halogen ions and halogen compounds contained in the composition is 10 ppm or less.
Type:
Application
Filed:
September 22, 2003
Publication date:
July 8, 2004
Applicants:
Canon Kabushiki Kaisha, Fuji Chemical Co. Ltd.
Abstract: A composition for forming a piezoelectric containing a dispersoid obtained from metallic compound, wherein the content of hafnium in the composition is 3,000 ppm or less.
Type:
Application
Filed:
September 22, 2003
Publication date:
July 1, 2004
Applicants:
Canon Kabushiki Kaisha, Fuji Chemical Co. Ltd.
Abstract: In a piezoelectric element having a piezoelectric film sandwiched between a lower electrode and an upper electrode, the lower electrode and/or the upper electrode and the piezoelectric film comprise perovskite oxide and a contact interface between the lower electrode and/or the upper electrode and the piezoelectric film does not exist and a region where crystals of the lower electrode and/or the upper electrode and crystals of the piezoelectric film are mixed exists between the lower electrode and/or the upper electrode and the piezoelectric film.
Type:
Application
Filed:
September 16, 2003
Publication date:
July 1, 2004
Applicants:
CANON KABUSHIKI KAISHA, FUJI CHEMICAL CO. LTD