Abstract: An electromagnetic contactor has a contact device having a pair of fixed contacts and a movable contact; and an electromagnet unit including an exciting coil driving a movable plunger connected through a connecting shaft. The contact device is configured such that L-shaped portions have a contact portion formed in the pair of fixed contacts fixed maintaining a predetermined interval, and two ends of the movable contact are disposed to be capable of contacting to and separating from the contact portions of the L-shaped portion on a side opposite to that of the electromagnet unit. The electromagnet unit includes a magnetic yoke enclosing a plunger drive portion, a movable plunger having a leading end protruding through an aperture formed in the magnetic yoke and urged by a return spring, and a ring-form permanent magnet magnetized in a movable direction of the movable plunger and fixed to enclose a peripheral flange portion.

Abstract: A method of manufacturing a super-junction semiconductor device is disclosed that allows forming a high concentration layer with high precision and improves the trade-off relationship between the Eoff and the dV/dt using a trench embedding method. The method comprises a step of forming a parallel pn layer using a trench embedding method and a step of forming a proton irradiated layer in the upper region of the pn layer. Then, heat treatment is conducted on the proton irradiated layer for transforming the protons into donors to form a high concentration n type semiconductor layer. Forming the high concentration n type semiconductor layer by means of proton irradiation allows forming a high concentration n type semiconductor layer with an impurity concentration and thickness with high precision as compared with forming the layer by means of an epitaxial growth process.

Abstract: A cooling device for a semiconductor module supplying a coolant from outside into a water jacket and cooling a semiconductor element, includes a heat sink thermally connected to the semiconductor element; a first flow channel extending from a coolant introducing port and including a guide section having an inclined surface for guiding the coolant toward one side surface of the heat sink; a second flow channel disposed parallel to the first flow channel and extending toward a coolant discharge port; a flow velocity adjusting plate disposed in the second flow channel and formed parallel to the other side surface of the heat sink at a distance therefrom; and a third flow channel formed to communicate the first flow channel and the second flow channel. The heat sink is disposed in the third flow channel.

Abstract: A capacitance detection circuit inhibits noise. The capacitance detection circuit detects a change in capacitance between a pair of electrodes of a physical quantity sensor, with these electrodes generating the change in capacitance in response to a change in physical quantity. The capacitance detection circuit has a carrier signal generating circuit that supplies a carrier signal to one of the electrodes, an operational amplifier that has an inverting input terminal to which the other one of the electrodes is input, a dummy capacity that is connected in parallel to the pair of electrodes, and a carrier signal conditioning circuit that inverts a phase of a carrier signal supplied from the carrier signal generating circuit to the dummy capacity and adjusts a gain to inhibit the dummy capacity.

Abstract: A device for automatically detecting and removing air from a gas mixture of an organic gas and air includes calculating a saturation pressure value based on a temperature of the gas mixture in a reservoir 1, and obtaining a pressure threshold value by adding a margin value to the saturation pressure value. When the pressure value inside the reservoir 1 is higher than the pressure threshold value, air is detected to be in the gas mixture. After this detection, a controller 5 pressurizes and introduces the gas mixture into a pressure container 2 to condense the organic gas in the gas mixture, thus producing a diluted gas mixture. Subsequently, the diluted gas mixture is introduced to a supply side of a membrane unit 3, the organic gas in the diluted gas mixture is recovered at a permeation side thereof, and a residual gas is discharged outside of the device.

Abstract: A moving body drive apparatus drives a moving body in a linear direction by a drive source. The drive apparatus includes a relay rotating body moved in a traveling direction of the moving body by the drive source, and provided rotatably in a direction perpendicular to the traveling direction to relay drive power to the moving body; a rotation converting body arranged stationary relative to the moving body and engaging an outer circumference of the relay rotating body, for converting movement of the relay rotating body moved in the traveling direction into rotation; and a conveyance linear body adapted to be coupled to the moving body and engaging the outer circumference of the relay rotating body. The conveyance linear body moves in the traveling direction of the moving body by the relay rotating body rotating while being moved in the traveling direction of the moving body.

Abstract: A contact mechanism where a shape of at least one of a fixed contactor including a pair of fixed contact portions and a movable contactor including a pair of movable contact portions capable of contacting with and separating from the pair of fixed contact portions is set to a shape that generates a Lorentz force resisting electromagnetic repulsion in a contactor opening direction generated between the fixed contact portions and the movable contact portions when a current is applied, has the fixed contactor and the movable contactor being inserted in a current path. Magnetic bodies are disposed on at least one of the fixed contactor and the movable contactor for suppressing a force driving arcs, which are generated between the pair of fixed contact portions and the pair of movable contact portions, to the fixed contactor on the opposite side.

Abstract: The present invention provides a contact mechanism that is capable of, without enlarging the entire configuration thereof, preventing the generation of an electromagnetic repulsion that opens a movable contact upon application of a current, and also provides an electromagnetic contactor that uses this contact mechanism. A contact mechanism (CM) has a fixed contact (2) and a movable contact (3) that are inserted in a current-carrying path. In the contact mechanism (CM), at least either the fixed contact (2) or the movable contact (3) is formed into an L-shape or a U-shape so as to generate a Lorentz force that acts against an electromagnetic repulsion in an opening direction, which is generated between the fixed contact (2) and the movable contact (3) upon application of a current.

Abstract: A semiconductor device includes: an electron transit layer formed on a substrate and of a group III nitride-based compound semiconductor; an electron supply layer formed on the electron transit layer and of a group III nitride-based compound semiconductor having a higher band gap energy than the transit layer; a field plate layer formed on the supply layer, formed of a non-p-type group III nitride-based compound semiconductor, and having a lower band gap energy than the supply layer; a first electrode forming an ohmic contact with a two-dimensional electron gas layer in the transit layer at an interface thereof with the supply layer; and a second electrode forming a Schottky contact with the electron gas layer. The second electrode forms an ohmic contact, at a side wall of the field plate layer, with two-dimensional hole gas in the field plate layer at an interface thereof with the supply layer.

Abstract: An insulated gate semiconductor device includes a region that is provided between trenches in which a gate electrode is filled through a gate insulating film in a surface layer of a substrate, includes a p base region and an n+ emitter region, and comes into conductive contact with an emitter electrode and a p-type floating region that is electrically insulated by an insulating film which is interposed between the p-type floating region and the emitter electrode. The p-type floating region is deeper than the trench and has a lower impurity concentration than the p base region.

Abstract: An electrophotographic photoreceptor is removably installed and used in a device main unit of an electrophotography application device so as to form a process cartridge. The device main unit includes a driving-side power transmission portion. The photoreceptor includes a photosensitive drum including a cylindrical conductive base having a photosensitive layer containing a photoconductive material. A flange is fitted to the photosensitive drum. The flange includes a driven-side driving force transmission portion that has a cylindrical member and engaging protrusions. The flange transmits to the photosensitive drum a rotational driving force from the driving-side power transmission portion. A center of the cylindrical member is disposed on a central axis of the photosensitive drum. The protrusions are parallel to the central axis at positions on the outer periphery of the cylindrical member that trisect the cylindrical member.

Abstract: An integrated circuit device, for a power supply that is connected to an AC power source via an input circuit having a capacitor, is able to reliably discharge the capacitor when the AC power source is interrupted. The integrated circuit device includes a first discharge circuit that operates in response to an internal supply voltage and discharges the capacitor via a first switch element that is turned on when the input voltage provided via the input circuit falls below a set voltage, and a second discharge circuit having a second switch element that is turned off when receiving the internal supply voltage but is turned on in response to the input voltage when the supply of internal supply voltage is interrupted.

Abstract: A mounting structure for a printed circuit board, includes a printed circuit board to which a heavy material is fixed; a fixing member fixed to the printed circuit board immediately below the heavy material; and a receiving member fixed to a main body. A bottom portion of the fixing member is disposed in the receiving member, and fixed to the receiving member by a resin adhesive.

Abstract: A semiconductor device includes an insulating circuit substrate mounted with at least one semiconductor element; a resin case having a bottom surface portion attached with the insulating circuit substrate and a side surface portion enclosing a periphery of the bottom surface portion; a lead molded integrally with the resin case and provided on a periphery of the insulating circuit substrate to be positioned on a surface of the bottom surface portion inside the resin case, the lead partially extending from inside the resin case to outside the resin case; and a sealing resin filled inside the resin case. A depressed portion is formed on two sides of the lead along a peripheral edge of the bottom surface portion inside the resin case.

Abstract: An inverter stack includes an inverter main body housing an inverter circuit inside, and a fan block disposed on the inverter main body through an engagement device and housing a plurality of fans. The engagement device includes a bolt member penetrating through a slot formed in the inverter main body, wherein a body portion of the bolt member is screwed into a nut fixed to a plate member, and having a stopper nut, and an engagement hole formed in the fan block, the engagement hole having an attachment hole portion and a clamping hole portion formed continuously. When the bolt member is tightened in which the body portion passes through the clamping hole portion, the fan block is engaged with the inverter main body, and when the bolt member is released, the fan block is pulled out to the front side to be disengaged from the inverter main body.

Abstract: A circuit assembly is disclosed which includes first and second substrates disposed on a heat dissipation base, and first and second semiconductor elements mounted on the first and second substrates. The first and second substrates are wired together, and three main electrode terminals are provided when the first and second semiconductor elements are connected in series, while two main electrode terminals are provided when the first and second semiconductor element are connected in parallel. In both cases, the circuit assembly is covered with a common exterior case so that one portion of each main electrode terminal or one portion of each main electrode terminal is exposed. Parts used in the circuit assembly are shared, and by changing the wiring between the first and second substrates, semiconductor modules with different functions are realized at low cost.

Abstract: A reverse block-type insulated gate bipolar transistor (IGBT) manufacturing method that, when manufacturing a reverse block-type IGBT having a separation layer formed along tapered surfaces of a V-shaped groove formed using anisotropic etching, can secure a highly reliable reverse pressure resistance, and suppress a leakage current when reverse biasing. When irradiating with a flash lamp for flash lamp annealing after implantation of ions into a second conductivity type separation layer and second conductivity type collector layer to form the second conductivity type collector layer and second conductivity type separation layer, the strongest portion of radiation energy is focused on a depth position from the upper portion to the central portion of a tapered side edge surface.

Abstract: Plural gate trenches are formed in the surface of an n-type drift region. A gate electrode is formed across a gate oxide film on the inner walls of the gate trenches. P-type base regions are selectively formed so as to neighbor each other in the gate trench longitudinal direction between neighboring gate trenches. An n-type emitter region is formed in contact with the gate trench in a surface layer of the p-type base regions. Also, a p-type contact region with a concentration higher than that of the p-type base region is formed in the surface layer of the p-type base region so as to be in contact with the gate trench side of the n-type emitter region. An edge portion on the gate trench side of the n-type emitter region terminates inside the p-type contact region.

Abstract: A current flowing into one of half-bridge circuits of a power semiconductor module (10) is detected by corresponding one of current detection circuits (11a and 11b to 11f) through a current detection terminal provided in corresponding one of semiconductor switching devices (Q1 and Q2 to Q6) forming the half-bridge circuits and a current detection terminal provided in corresponding one of flywheel diodes (D1 and D2 to D6) back-to-back connected to the corresponding one of the semiconductor switching devices (Q1 and Q2 to Q6).

Abstract: A power converter includes pairs of series-connected switching elements and, for each pair, a bidirectional switch that clamps the switching elements of the pair at the mid-point of a DC voltage that is supplied to the power converter. An abnormal voltage rise in a forward recovery process of the bidirectional switch is avoided by restraining an induced electromotive force developing across the bidirectional switch upon turning OFF of one of the semiconductor switching elements below the difference in voltage between the gate voltage at the start of the forward recovery process of the bidirectional switch and the gate threshold voltage that allows the maximum recovery current of the bidirectional switch to flow.