Abstract: Provided is a method of manufacturing a semiconductor device which includes a semiconductor chip, an insulating board mounted with the semiconductor chip and having a wiring pattern, and a leadframe connected to the wiring pattern, the semiconductor chip, the wiring pattern and the leadframe being partially sealed with a sealing resin, wherein: an epoxy resin composition formed by adding 0.3 to 0.7 mass % of epoxysilane as a silane coupling agent to an epoxy resin is used as the sealing resin; and a copper member made of copper or a copper alloy and having an oxide film formed in the surface with a film thickness in a color indicated by an L* value in the range of 48 to 51, an a* value in the range of 40 to 49 and a b* value in the range of 24 to 40 is used as the leadframe and the wiring pattern.

Abstract: Terminal assembly portions, lying on a front surface side of a case, are aligned in a left-right direction in a portion raised from a bottom of the case so that opening faces of the terminal assembly portions are positioned above circuit formation regions. Wiring terminal plates are led out into the terminal assembly portions, and disposed adjacent to each other. After each wiring terminal plate is connected by a laser welding to one end of one external connection terminal plate formed integrally with a cover, these welded portions are sealed with a second mold resin portion made of gel or an insulating resin such as epoxy. By so doing, even when the terminal junction area and distance between terminal junctions in the terminal assembly portions are small, it is possible to increase the joint strength of the terminals, and also secure withstand voltage.

Abstract: A semiconductor device is disclosed which has a high voltage isolation structure that is a RESURF structure, wherein it is possible to reduce a displacement current generated by dV/dt noise, and a method of manufacturing the semiconductor device. It is possible to increase a lateral resistance without changing the total amount of electric charges in the uppermost surface p-type diffusion layer by using an uppermost surface p-type diffusion layer configuring a double-RESURF structure being formed so that high concentration regions with a deep diffusion depth and low concentration regions with a shallow diffusion depth are alternately arranged adjacent to each other. As a result, it is possible to reduce a displacement current generated by dV/dt noise.

Abstract: A method for producing a semiconductor device includes laser welding to bond an upper terminal and a lower terminal as internal wiring members of the semiconductor device. When the upper terminal is fixed to the lower terminal by the laser welding, a gap between an upper surface of the lower terminal and a lower surface of the upper terminal is equal to or more than 20 ?m and equal to or less than 400 ?m.

Abstract: An inverter circuit 40 with reduced loss in semiconductor elements when starting up, having switching elements Q1 and Q2 in series, and connected to both ends of a direct current power source circuit 30 having direct current power sources Psp and Psn in series, and including an alternating current output terminal U connected to a connection point of the switching elements, an alternating current output terminal V connected to a connection point of the direct current power sources, a bidirectional switch element S1, connected between the alternating current output terminal U and a terminal R of an alternating current power source 1, and a bidirectional switch element S2, connected between the alternating current output terminal U and a terminal S of the alternating current power source, causing the bidirectional switch elements to turn on and off when starting up.

Abstract: A power conversion device for driving a load, including a power conversion device main body configured to receive an input of a power supply voltage and to drive the load, and a brake circuit configured to protect the power conversion device main body from overvoltage applied thereto. The brake circuit includes a Zener diode that becomes conductive when the voltage applied to the power conversion device main body exceeds a predetermined value, to thereby suppress the voltage.

Abstract: A super-junction semiconductor device includes a drift layer including an alternating-conductivity-type layer that includes n-type region and p-type region arranged alternately in parallel to the first major surface of an n-type substrate. These alternating regions extend deep in a direction perpendicular to the first major surface. The first major surface includes a main device region with a gate electrode and a main source electrode and sensing device region with a gate electrode and a sensing source electrode. There is a common drain electrode on the second major surface of the substrate. There is a separation region between the main device region and the sensing device region. It includes an n-type region and p-type regions in the n-type region. The p-type regions are in an electrically floating state in the directions parallel and perpendicular to the first alternating-conductivity-type layer.

Abstract: An electric power converter can include an electric power converter case mounted on rolling stock, a unit mounting section formed in the electric power converter case and having a cooler insertion opening, and an internal unit mounted on the unit mounting section. The internal unit can include a cooler projecting from the unit mounting section through the cooler insertion opening into an outside air introduction section into which the outside air is introduced and a plurality of securing holders made to butt against the unit mounting section for securing the internal unit. Each of the securing holders can have a butting surface for butting against the unit mounting section to form a step by making the butting surface protrude from the opposed surface of the internal unit facing the unit mounting section.

Abstract: A combined switching device includes a MOSFET disposed in a MOSFET area and IGBTs disposed in IGBT areas of a SiC substrate. The MOSFET and the IGBTs have gate electrodes respectively connected, a source electrode and emitter electrodes respectively connected, and a drain electrode and a collector electrode respectively connected. The MOSFET and the IGBTs are disposed with a common n-buffer layer. A top surface element structure of the MOSFET and top surface element structures of the IGBTs are disposed on the first principal surface side of the SiC substrate. Concave portions and convex portions are disposed on the second principal surface side of the SiC substrate. The MOSFET is disposed at a position corresponding to the convex portion of the SiC substrate. The IGBTs are disposed at positions corresponding to the concave portions of the SiC substrate.

Abstract: A contactless power transfer system, including a coil configured to supply or receive power contactlessly via magnetic coupling, a bridge circuit having two direct current (DC) terminals and two alternating current (AC) terminals, and a smoothing capacitor connected between the DC terminals. A load is connectable to either end of the smoothing capacitor. One of the AC terminals is connected to one end of the coil via a first capacitor. The other of the AC terminals is connected to the other end of the coil. The bridge circuit includes two serially-connected circuits each having upper and lower arms, each arm having a semiconductor switch and a diode in reverse parallel connection. A second capacitor is connected in parallel to the semiconductor switch of an upper arm, or of a lower arm, or to two semiconductor switches respectively of an upper arm and of a lower arms, of the bridge circuit.

Abstract: A semiconductor module cooler includes a fin which is a heat sink, which is thermally connected to a semiconductor element, and which has one or more notches in an edge at one or more arbitrary positions in a longitudinal direction and one or more convex ribs which are formed on a bottom of a water jacket having a cooling flow path and which fit into the one or more notches at one or more arbitrary positions. By doing so, the efficiency of transferring heat generated by the semiconductor element by a coolant is improved and cooling performance is improved.

Abstract: A semiconductor device includes element active portion X and element peripheral portion Y. An interlayer insulating film is formed on upper surfaces of portions X and Y. A source electrode connected to a p base region and n-type source region and a gate metal wiring formed annularly surrounding the source electrode are formed on element active portion X side upper surface of the interlayer insulating film. The gate metal wiring connects to a gate electrode. An organic protective film with openings is formed on a first main surface side upper surface of the semiconductor substrate, and the openings serve as a gate electrode pad partially exposing the gate metal wiring and a source electrode pad partially exposing the source electrode. An inorganic protective film formed between the gate metal wiring and the organic protective film covers the gate metal wiring. The semiconductor device is highly reliable.

Abstract: In a motor drive device (1) the motor driving setting of which is performed by a setting display unit (20), the setting display unit (20) displays a setting content of a setting item when the setting content of the setting item is changed, and further displays related information (an input value, an output detection value, a computed value calculated by the controller) of at least one or more related items, which are related to the setting item. By using the setting display unit which simultaneously displays the setting content and the related information necessary for setting, it is possible to set the motor drive device (1) easily and quickly.

Abstract: A layered, positively-charged electrophotographic photoreceptor, a method for manufacturing the photoreceptor and an electrophotographic apparatus using the photoreceptor are disclosed. The layered, positively-charged electrophotographic photoreceptor includes a conductive support on which is provided a sequential stack composed of a charge transport layer containing at least a first hole transport material and a first binder resin; and a charge generation layer containing at least a charge generation material, a second hole transport material, an electron transport material, and a second binder resin, wherein the charge generation layer and the charge transport layer have a total amount of residual solvents that is 50 ?g/cm2 or less. The photoreceptor is highly sensitive, highly durable, and has excellent image qualities including low image defects from cracks generated due to image memory or contact contamination.

Abstract: A superjunction semiconductor device is disclosed in which the tradeoff relationship between on-resistance and breakdown voltage is improved greatly so that reverse recovery capability is improved. A drain drift portion substantially corresponds to a portion just under p-base regions serving as an active region and forms a first parallel pn structure in which a first n-type region and a first p-type region are joined to each other alternately and repeatedly. A drain drift portion is surrounded by edge termination region including a second parallel pn structure. Edge termination region is formed such that second n-type and p-type regions oriented consecutively to the first parallel pn structure of the drain drift portion are joined to each other alternately and repeatedly. N-buffer layer is provided between first and second parallel pn structures and n+ drain layer. P-buffer layer is provided selectively inside n-buffer layer in edge termination region.

Abstract: A semiconductor device and manufacturing method are disclosed which provide increased ESD resistance. By disposing a slit mask when forming a second p-type well layer, impurity concentration of the second p-type well layer is partially reduced. By forming a second n-type offset layer in the second p-type well layer having decreased impurity concentration, it is possible to increase thickness of the second n-type offset layer in this place compared with that heretofore known. By increasing thickness of the second n-type offset layer, a depletion layer does not reach an n-type drain layer at a low voltage when reverse bias is applied to the drain. It thus is possible to prevent thermal destruction caused by localized electrical field concentration. As a result, it is possible to increase ESD resistance. As it is sufficient to replace a photoresist mask, there is no increase in the number of processes.

Abstract: A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device.

Abstract: An article including a perovskite manganese (Mn) oxide thin film, includes a substrate having an oriented perovskite structure that is (m10) oriented, where 19?m?2, and having an [100] axis direction; and a perovskite manganese (Mn) oxide thin film having a perovskite crystal lattice containing barium Ba and a rare earth element Ln in A sites of the perovskite crystal lattice, the perovskite manganese (Mn) oxide thin film being formed on the substrate so as to cover at least part of a surface of the substrate, and having atomic planes stacked in a pattern of LnO—MnO2—BaO—MnO2-LnO . . . in the [100] axis direction of the substrate. The perovskite manganese (Mn) oxide thin film provided thoroughly exploits the resistance changes caused by charge and orbital ordering in the perovskite manganese oxide.

Abstract: A semiconductor apparatus equipped with at least one semiconductor element includes a metallic plate bonded to an upper surface of the semiconductor element and a conductor plate, bonded to the metallic plate and serving as an electric current path of the semiconductor apparatus. The conductor plate and the metallic plate are bonded to each other by laser welding at a part other than a part directly above the semiconductor element. As a result, heat damage caused by laser welding can be reduced.

Abstract: A side sliding door apparatus for a vehicle includes one of two sliding doors driven by an actuator, and the other moves in conjunction with the one sliding door via a direction converting mechanism. When the sliding door is in a closed condition, a latch rod is inserted into a lock hole to lock the sliding doors in the closed condition. A roller is pushed up on a cam surface when the sliding doors are opened, which releases the locking. An upper level surface of the cam surface forms an inclined surface with a downward gradient, which prevents the roller from unexpectedly going beyond the starting end of the upper level surface and dropping due to vibration or the like being applied to the slider in the unlocked condition, and prevents the locking with the locking mechanism in response to the next sliding door closing command.