Patents Assigned to Fujifilm Electronic Materials U.S.A., Inc.
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Patent number: 11618867Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: November 2, 2022Date of Patent: April 4, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
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Patent number: 11603512Abstract: The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.Type: GrantFiled: March 18, 2021Date of Patent: March 14, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Abhudaya Mishra, Carl Ballesteros, Eric Turner
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Publication number: 20230060999Abstract: The present disclosure provides a polishing composition that includes at least one first amine, at least one second amine, and other components such as azoles. The first amine has a low molecular weight, for example 120 g/mol or less. The second amine has a high molecular weight, for example 125 g/mol or higher. The compositions can polish substrates that include copper and molybdenum, or alloys of each, at a high selectivity of copper to molybdenum.Type: ApplicationFiled: August 26, 2022Publication date: March 2, 2023Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: James McDonough, Bin Hu, Qingmin Cheng
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Publication number: 20230042919Abstract: A chemical liquid manufacturing apparatus is provided. The manufacturing apparatus at least includes an ion exchange medium and an ion adsorption medium configured downstream from the ion exchange medium. A material of the ion adsorption medium includes a resin material having an amide bond or an imide bond.Type: ApplicationFiled: October 7, 2022Publication date: February 9, 2023Applicant: FUJIFILM Electronic Materials U.S.A., Inc.Inventors: Marcia Cole-Yocom, Bryan Hinzie, Yuan Chen, Jack W. Helzer, Pejman Ahmadiannamini
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Patent number: 11541358Abstract: A method for process a chemical liquid is provided. The method includes at least providing a system having at least one filtration medium, treatment the system with a treatment liquid having a content of iron (Fe) and calcium (Ca) of about 10 ppb or less, and processing a chemical liquid using an apparatus having the system configured therein after the treatment process.Type: GrantFiled: August 21, 2019Date of Patent: January 3, 2023Assignee: FUJIFILM Electronic Materials U.S.A., Inc.Inventors: Marcia Cole-Yocom, Bryan Hinzie, Michael Barker, Jack Helzer, Shen-Ping Huang, Pejman Ahmadiannamini, Yuan Chen
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Patent number: 11505718Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.Type: GrantFiled: May 12, 2021Date of Patent: November 22, 2022Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Patent number: 11508569Abstract: This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate. The methods can include a) supplying a sublimating material to a substrate having a pattern disposed on a surface thereof; b) maintaining the sublimating material on the surface for a time sufficient to modify the surface; c) solidifying the sublimating material on the surface; and d) removing by sublimation the sublimating material disposed on the surface.Type: GrantFiled: August 3, 2020Date of Patent: November 22, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: William A. Wojtczak, Kazutaka Takahashi, Atsushi Mizutani, Thomas Dory, Keeyoung Park
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Patent number: 11499071Abstract: The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2) at least one compound of structure (I): 3) at least one compound of structure (II): and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, R1-R7, X, Y, and Z1-Z3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.Type: GrantFiled: March 27, 2020Date of Patent: November 15, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Alexei P. Leonov, Abhudaya Mishra
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Patent number: 11498033Abstract: A chemical liquid manufacturing apparatus is provided. The manufacturing apparatus at least includes an ion exchange medium and an ion adsorption medium configured downstream from the ion exchange medium. A material of the ion adsorption medium includes a resin material having an amide bond or an imide bond. A manufacturing method of a chemical liquid using the apparatus is also provided.Type: GrantFiled: November 21, 2019Date of Patent: November 15, 2022Assignee: FUJIFILM Electronic Materials U.S.A., Inc.Inventors: Marcia Cole-Yocom, Bryan Hinzie, Yuan Chen, Jack W. Helzer, Pejman Ahmadiannamini
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Patent number: 11499099Abstract: This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.Type: GrantFiled: September 2, 2020Date of Patent: November 15, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Kazutaka Takahashi, Tomonori Takahashi, William A. Wojtczak
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Patent number: 11447642Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.Type: GrantFiled: January 7, 2021Date of Patent: September 20, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: William A. Wojtczak, Atsushi Mizutani, Keeyoung Park
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Patent number: 11440866Abstract: The present disclosure is directed to methods and systems of purifying solvents. The purified solvents can be used, e.g., as pre-wet liquids, solution developers, and cleaners in a multistep semiconductor manufacturing process.Type: GrantFiled: June 9, 2021Date of Patent: September 13, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Yuan Chen, Eduardo Ramirez Romero, Bryan Hinzie
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Patent number: 11424131Abstract: This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid and a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a C16 to C22 hydrocarbon group and the hydrophilic portion comprises at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group. The polishing composition has a pH of about 2 to about 6.5.Type: GrantFiled: July 15, 2020Date of Patent: August 23, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Carl Ballesteros, Abhudaya Mishra, Eric Turner
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Patent number: 11414568Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.Type: GrantFiled: February 8, 2021Date of Patent: August 16, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
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Patent number: 11407923Abstract: Chemical mechanical polishing compositions include an abrasive, an additive, and water. The polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 ?m bin size.Type: GrantFiled: January 29, 2021Date of Patent: August 9, 2022Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INCInventors: James McDonough, Saul Alvarado
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Patent number: 11407966Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.Type: GrantFiled: January 26, 2022Date of Patent: August 9, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Thomas Dory, Mick Bjelopavlic, Joshua Guske, Kazutaka Takahashi
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Patent number: 11401487Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: January 24, 2022Date of Patent: August 2, 2022Assignee: Fujifilm Electronics Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
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Patent number: 11359169Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: January 24, 2022Date of Patent: June 14, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
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Publication number: 20220162478Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.Type: ApplicationFiled: February 11, 2022Publication date: May 26, 2022Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Patent number: 11286444Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: August 20, 2020Date of Patent: March 29, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer