Abstract: An electronic device includes a package substrate made of an insulator, a device chip that is flip-chip mounted on the package substrate, and a seal portion sealing the device chip. The seal portion includes sidewalls made of solder. The whole seal portion including the sidewalls may be made of solder. The electronic device may include a metal layer provided on the seal portion.

Abstract: A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave.

Abstract: A surface acoustic wave device includes a supporting substrate, a LiTaO3 piezoelectric substrate joined on the supporting substrate, which has a normal line direction on a main surface thereof in a direction rotated 43° to 53° from a Y axis to a Z axis direction about an X axis, and an electrode pattern formed on the piezoelectric substrate.

Abstract: A filter includes a first filter that is connected between an input node and an output node and is a surface acoustic wave filter, and a second filter that is provided between the input node and the output node and is connected in parallel with the first filter. The first filter has a total number N1 of pairs of electrode fingers of interdigital transducers and the second filter having a total number N2 of pairs of electrode fingers of interdigital transducers, in which N1 is greater than N2.

Abstract: A filter includes piezoelectric thin-film resonators having a substrate, a lower electrode supported by the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. At least one of the piezoelectric thin-film resonators has a portion in which the upper electrode overlaps the lower electrode across the piezoelectric film. The above portion has a shape different from shapes of corresponding portions of other piezoelectric thin-film resonators, so that a spurious component in the above at least one of the piezoelectric thin-film resonators occur at a frequency different from frequencies of spurious components that occur in the other piezoelectric thin-film resonators.

Abstract: A duplexer includes an antenna terminal, a first filter connected to the antenna terminal, a second filter that has a passband at a high-frequency side of the first filter and is connected to the antenna terminal, and a resonance circuit that is connected between the second filter and the antenna terminal and includes a first inductor and a first capacitor connected in parallel. Assuming that a passband frequency of the first filter ranges from f1Low to f1High (f1Low˜f1High) and a passband frequency ranges from f2Low to f2High (f2Low˜f2High), the resonator has a resonance frequency fr satisfying: fr=(f2Low˜f2High)±(f1Low˜f1High), or fr=2(f1Low˜f1High)±(f2Low˜f2High).

Abstract: An electronic device includes a substrate, a first coil that has a spiral shape and is provided on the substrate, a second coil that has a spiral shape, is provided above the first coil, and is spaced from the first coil, a first connection portion that electrically couples the first coil and the second coil, a wire that is provided on the substrate and connects one of the first coil and the second coil to outside, and a second connection portion that is mechanically connected to an outer side face of outermost circumference of the second coil and is mechanically connected on the substrate where one of the wire and the first coil is not provided.

Abstract: A transmission module includes: a power amplifier amplifies power of a radio frequency signal that is to be transmitted via an antenna; a coupler that allows the radio frequency signal from the power amplifier to travel toward the antenna and causes adverse radio frequency power to ground; and a substrate provided with the power amplifier and the coupler.

Abstract: A filter includes a parallel resonator having first comb electrodes provided on a piezoelectric substrate and a first dielectric film that covers the first comb electrodes, and a series resonator having second comb electrodes provided on the piezoelectric substrate and a second dielectric film covers the second comb electrodes and is made of a material identical to that of the first dielectric film. The first dielectric film has a different thickness from that of the second dielectric film.

Abstract: There is provided a filter including a first resonator, a second resonator in which an excitation efficiency is reduced more than the first resonator, and an inductor connected in parallel with the second resonator.

Abstract: A piezoelectric thin-film resonator includes: a lower electrode that is formed on a substrate; a piezoelectric film that is formed on the substrate and the lower electrode; an upper electrode that is formed on the piezoelectric film, with a portion of the piezoelectric film being interposed between the lower electrode and the upper electrode facing each other; and an additional film that is formed on the substrate on at least a part of the outer periphery of the lower electrode at the portion at which the lower electrode and the upper electrode face each other, with the additional film being laid along the lower electrode.

Abstract: A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern being continuously formed on a cutting region for individuating the wafer, a second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element and a third conductive pattern connecting the first conductive pattern and the second pattern; forming an insulating layer on the wafer so as to have an opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.

Abstract: A surface acoustic wave device includes a base portion that surrounds a surface acoustic wave element and is made of a resin, and a cap portion that is adhered onto the base portion so that a cavity sealing the surface acoustic wave element is formed, and is made of a resin. At least one of an adhering face of the base portion and an adhering face of the cap portion adhering the base portion and the cap portion is subjected to a grain finish or a dull finish. A convex portion is provided inside of the adhering face that is of one of the base portion and the cap portion adhered to the other.

Abstract: A ladder filter includes a series resonator having a first film laminate in which an upper electrode and a lower electrode face each other across a piezoelectric film, and a first film provided on the first film laminate, and a parallel resonator having a second film laminate having a structure similar to that of the first film laminate, a second film provided on the second film laminate, and another first film identical to the first film.

Abstract: An oscillator includes a first oscillating portion that outputs a first oscillation signal having a first oscillation frequency through a first intermediate node to an output terminal, a mounting portion that includes an insulating layer and that mounts the first oscillating portion, a first line provided in the insulating layer and coupled between the first intermediate node and ground, a second line provided in the insulating layer and coupled between the first intermediate node and a power supply terminal, and a third line provided in the insulating layer and coupled between the first intermediate node and the output terminal.

Abstract: An acoustic wave device includes a piezoelectric substrate, a resonator having comb electrodes that are provided above the piezoelectric substrate and excite an acoustic wave, and a capacitor that is provided above the piezoelectric substrate and is connected in series or parallel with the resonator, the capacitor including electrodes that horizontally face each other above the piezoelectric substrate. The electrodes of the capacitor are further from the piezoelectric substrate than the comb electrodes of the resonator.

Abstract: There is provided a resonant circuit includes a resonator, an inductor connected in parallel with the resonator, and a capacitor connected in parallel with the resonator. There are also provided a filter and an antenna duplexer having the above-described resonant circuit.

Abstract: A duplexer includes two surface acoustic wave (SAW) filters having different center frequencies; a phase matching circuit that matches phases of the two SAW filters; a package in which the SAW filters and the phase matching circuit are housed, the package being composed of multiple layers; and a line pattern provided between at least one of the SAW filters and at least one of a transmit terminal and a receive terminal of the duplexer. The line pattern runs on at least two of the multiple layers within a range defined by peripheral ground patterns provided in the package.

Abstract: An acoustic wave device includes a piezoelectric substrate, a first dielectric film formed on the piezoelectric substrate, and electrodes that are provided on the first dielectric film and excite an acoustic wave, the electrodes including electrode fingers. At least a part of the first dielectric film is cut out between adjacent electrode fingers among the electrode fingers.

Abstract: A piezoelectric thin-film resonator includes a substrate, a lower electrode arranged on the substrate, a piezoelectric film arranged on the lower electrode, and an upper electrode arranged on the piezoelectric film. A region in which the upper electrode overlaps with the lower electrode through the piezoelectric film has an elliptical shape, and a condition such that 1<a/b<1.9 is satisfied where a is a main axis of the elliptical shape, and b is a sub axis thereof.