Abstract: A surface acoustic wave (SAW) filter includes a piezoelectric substrate, a first interdigital transducer (IDT) for input and a second IDT for output that are provided on the piezoelectric substrate, the first IDT and the second IDT being arranged in a propagation direction, and a shield electrode arranged between the first IDT and the second IDT and/or between interconnection lines that connect the first IDT and the second IDT, at least one of the first IDT and the second IDT being of a longitudinal coupling multi-mode type having a balanced operation. Thus, it is possible to suppress a stray capacitance between the first IDT and the second IDT, and thereby to improve the symmetry of balanced operation signals.
Abstract: An antenna duplexer includes two surface acoustic wave filters having different center frequencies and a phase matching circuit that matches phases of the two surface acoustic wave filters. A matching line pattern is provided on at least two layers between the two surface acoustic wave filters and transmission and reception terminals, and within an area specified by a sheet-like ground in a multilayered package, the multilayered package comprising multiple layers including a bonding layer on which wire bonding pads are provided for connecting to the two surface acoustic wave filters, and the matching line pattern having no portion provided on bonding layer.
Type:
Grant
Filed:
April 26, 2005
Date of Patent:
October 2, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Inventors:
Yasuhide Iwamoto, Shogo Inoue, Jun Tsutsumi, Masanori Ueda
Abstract: A surface acoustic wave device includes, a first substrate, a surface acoustic wave chip attached to the first substrate, and a second substrate that hermetically seals the surface acoustic wave chip. At least one of the first and second substrates includes. The first and second substrates have respective joining surfaces. An electric circuit is formed on a surface area of the first substrate other than the joining surfaces.
Type:
Grant
Filed:
March 30, 2004
Date of Patent:
September 25, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Abstract: A filter element includes resonators that are arranged in series arms and parallel arms in a circuit. In this filter element, at least one of the series-arm resonators includes a plurality of single-terminal pair piezoelectric thin-film resonators connected in parallel.
Type:
Grant
Filed:
November 21, 2003
Date of Patent:
September 18, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Abstract: Disclosed is a method of manufacturing a surface acoustic wave device comprising the steps of forming a drive electrode having a surface acoustic wave element function on a piezoelectric substrate wafer, providing a resist coat on an upper region of the drive electrode, covering the resist coat with a metal film, removing the resist coat lying within the metal film so that the metal film is formed in a dome form having a hollow portion covering the drive electrode, and providing a resin seal on the metal film.
Abstract: A sensor stem supporting a sensor element comprising a metal plate having a shape defined by press, the metal plate include a dent portion formed on a first surface of the metal plate, a step portion formed on a second surface of the metal plate facing the first surface, and a projection formed on the step portion for resistance welding. It is thus possible to obtain an excellent hermetic sealing of the sensor stem and a cap, which protects an oscillator, a circuit board and the like. The sensor stem can prevent a short circuit and can be lowered in height thereof.
Type:
Grant
Filed:
February 9, 2005
Date of Patent:
July 10, 2007
Assignee:
Fujitsu Media Devices Limited
Inventors:
Toshinobu Hosokawa, Masanori Yachi, Kazuhiro Ota
Abstract: A surface acoustic wave device that enables to reduce heating process, prevent from heat break, and make thin profile is to be provided. The surface acoustic wave device includes a substrate, a surface acoustic wave element having a comb electrode formed on a piezoelectric substrate, and being flip-mounted on the substrate using a bump in such a manner as the comb electrode is disposed opposite to the substrate, a first resin layer covering the surface acoustic wave element, and a second resin layer formed on the first resin layer, wherein the first resin layer and the second resin layer are thermosetting resins in which state transitions of being softened and thereafter cured are produced through heating process, and the first resin layer is formed of a resin material having greater fluidity caused by softening than the resin material of the second resin layer.
Abstract: A surface acoustic wave filter capable of obtaining a low insertion loss and wide bandwidth characteristic is provided. The surface acoustic wave filter includes a piezoelectric substrate; a pair of reflective electrodes formed on the piezoelectric substrate; and a plurality of comb electrodes formed between the pair of reflective electrodes on the piezoelectric substrate, wherein, in regard to the neighboring two comb electrodes among the plurality of comb electrodes, an electrode pitch of one comb electrode is set so that continuously varying phases of surface acoustic waves respectively generated by the two comb electrodes are obtained in a gap opposite to an outermost finger electrode of the other neighboring comb electrode.
Abstract: A balanced filter includes a package having an input ground metal pattern and an output ground metal pattern, and a filter chip having an inphase filter and an antiphase filter, which filters are mounted on the package, at least one of the inphase and antiphase filters having an input ground terminal connected to the input ground metal pattern and an output ground terminal connected to the output ground metal pattern, the input and output ground terminals of said at least one of the inphase and antiphase filters being separate from each other on the filter chip.
Type:
Grant
Filed:
April 26, 2005
Date of Patent:
June 19, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Abstract: A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes, first pads connected thereto, and a first film are provided. The first film is located so as to surround the comb-like electrodes. A base substrate has a second surface on which second pads joined to the first pads and a second film joined to the first film are provided. The first and second films joined by a surface activation process define a cavity in which the comb-like electrodes and the first and second pads are hermetically sealed.
Type:
Grant
Filed:
March 26, 2004
Date of Patent:
June 5, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Abstract: An elastic boundary wave device includes a first piezoelectric substrate, IDTs arranged thereon, a first dielectric film having a smoothed surface that covers the IDTs, a second substrate that is a silicon-based substrate, and a second dielectric film provided on a main surface of the second substrate. The smoothed surface of the first dielectric surface and a surface of the second dielectric film are joined together.
Type:
Grant
Filed:
November 10, 2004
Date of Patent:
May 29, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Abstract: A surface acoustic wave device includes a piezoelectric substrate, a first and a second interdigital transducers (IDTs) provided on the piezoelectric substrate. The first IDT includes multiple tracks having different frequency characteristics that are connected in parallel. The second IDT includes a normalized electrode pattern. The frequency characteristic of the multiple tracks is asymmetric to a center frequency of the SAW filter, substantially flat in a passband when those of the multiple tracks are overlapped, or complementary in the passband. Thus, it is possible to provide the surface acoustic wave device having a high damping property.
Abstract: A surface acoustic wave element includes: metal patterns that include interdigital transducers, each of the metal patterns being formed with a first alloy or multi-layer film of metals having different standard electrode potentials; and metal films each formed with a second alloy or multi-layer film containing metals having different standard electrode potentials from the standard electrode potentials of the metals forming the first alloy or multi-layer film, the metal films being formed at least on a part of the regions other than the regions corresponding to the electrode fingers of the interdigital transducers of all the metal patterns that are electrically independent of one another.
Type:
Grant
Filed:
May 25, 2004
Date of Patent:
May 15, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Inventors:
Takashi Matsuda, Jun Tsutsumi, Shogo Inoue, Masanori Ueda
Abstract: A surface acoustic wave device includes a surface acoustic wave chip having a piezoelectric substrate on which comb-like electrodes and electrode pads are formed, a package housing the surface acoustic wave chip, and electrode patterns provided on a bottom surface of the package. The bottom surface of the package is wider than a top surface of the package. The electrode patterns are away from edges of the bottom surface of the package.
Abstract: A surface acoustic wave (SAW) device includes a SAW chip including comb-like electrodes arranged on a piezoelectric substrate, and a package on which the SAW chip is flip-chip mounted, the package including an interconnection that connects the comb-like electrodes. Resonators are connected to signal interconnection pads through the interconnection pattern. IDTs in a three-IDT multimode filter are respectively connected to the signal interconnection pads via another interconnection pattern. The signal interconnection pads are connected to a signal interconnection provided on a chip mounting surface with bumps. Then, a part of the interconnection pattern connecting the resonators is extracted onto the package. It is thus possible to design the interconnections on the package flexibly and thereby easy to adjust the impedance of the interconnections that connect the resonators.
Abstract: A piezoelectric thin-film resonator includes a substrate, a lower electrode arranged on the substrate, a piezoelectric film arranged on the lower electrode, and an upper electrode arranged on the piezoelectric film. A region in which the upper electrode overlaps with the lower electrode through the piezoelectric film has an elliptical shape, and a condition such that 1<a/b<1.9 is satisfied where a is a main axis of the elliptical shape, and b is a sub axis thereof.
Type:
Grant
Filed:
October 18, 2004
Date of Patent:
May 1, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Abstract: A surface acoustic wave device having a given impedance includes multimode type filters connected in series. A composite impedance of the multimode type filters defines the given impedance of the surface acoustic wave device.
Abstract: A bonded substrate includes a lithium tantalate substrate and a sapphire substrate to which the lithium tantalate substrate is bonded, a bonded interface of the lithium tantalate and the sapphire substrate includes a bonded region in an amorphous state having a thickness of 0.3 nm to 2.5 nm. The bonded region in the amorphous state is formed by activating at least one of the lithium tantalate substrate and the sapphire substrate in the bonded interface with neutralized atom beams, ion beams or plasma of inert gas or oxygen. It is possible to bond the piezoelectric substrate to the supporting substrate having different lattice constants without the high-temperature thermal treatment and realize the bonded substrate having an excellent bonding strength and being less warped.
Type:
Grant
Filed:
March 2, 2005
Date of Patent:
April 24, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited
Abstract: A method of fabricating electronic parts includes the steps of: mounting electronic elements in regular cavities that are two-dimensionally arranged on a baseboard on which dummy cavities are provided so as to surround the regular cavities, and covering a top of the baseboard with a resin sheet.
Abstract: A surface acoustic wave device includes: a piezoelectric substrate that has two or more resonators formed on a surface; and a supporting substrate that is joined to another surface of the piezoelectric substrate. In this surface acoustic wave device, at least two of the resonators have exciting portions that overlap each other in the direction of propagating surface acoustic waves, and at least a part of the piezoelectric substrate is removed or modified to have different properties between at least one pair of overlapping resonators among the resonators having the overlapping portions.
Type:
Grant
Filed:
May 7, 2004
Date of Patent:
April 10, 2007
Assignees:
Fujitsu Media Devices Limited, Fujitsu Limited