Abstract: A signal transmission system has a plurality of signal lines, a plurality of transmitting circuits, a plurality of receiving circuits, and a timing adjusting circuit. The transmitting circuits are provided for the signal lines. Each of the receiving circuits receives a signal from a corresponding one of the transmitting circuits via the signal lines. The timing adjusting circuit, which is provided at the same side as the transmitting circuits, adjusts signal latch timing for the receiving circuits to optimum timing in accordance with signal skew caused between the signal lines. Therefore, a large-capacity and error free transmission can be performed at high speed using a plurality of signal lines without being affected by skew on each of the signal lines.

Abstract: A signal receiver apparatus includes a waveform shaping data storage device storing waveform shaping data of a signal transmitted with a given timing from a signal transmitter device of a plurality of signal transmitter devices which are coupled to the signal receiver apparatus for each of the plurality of signal transmitter devices, and a waveform shaping device reading waveform shaping data of the signal transmitter device in the plurality of signal transmitter device from the waveform shaping data storage device when a signal from the signal transmitter device is received, and shaping a waveform of a received signal from the signal transmitter device.

Abstract: A layout determination method determines a layout of semiconductor devices that are to be created on a substrate by carrying out an exposure process. The layout determination method determines a number of semiconductor devices to be created on one substrate, based on exposure data of the semiconductor devices, a time limit of delivery of the semiconductor devices and a number of substrates to be used for production of the semiconductor devices, obtains coordinates of semiconductor devices arrangeable on the substrate, based on the exposure data, and determines the layout of the semiconductor devices to be created on the substrate, based on the exposure data, the number of semiconductor devices and the coordinates of the semiconductor devices.

Abstract: Strip-shaped alignment marks 14 are juxtaposed with each other in a silicon oxide film 12 formed on a silicon wafer 10. Each alignment mark 14 comprises a plurality of grooves 16 formed side by side in the silicon oxide film 12. An amorphous silicon film 18 is buried in the grooves 16. Thus, the alignment marks 14 are formed in a thus-formed line-and-space pattern. Accordingly, waveforms of detected signals having high contrast and little deformation can be obtained, and alignment of wafers with high accuracy can be realized.

Abstract: Nonvolatile evaluation memory cells are programmed to be a plurality of different values in advance, respectively. An internal voltage generating circuit can change the value of an internal voltage according to adjusting signals. To make the internal voltage close to its expected value, a voltage adjusting circuit outputs adjusting signals in accordance with cell currents that flow through the evaluation memory cells, respectively, in a read operation on the evaluation memory cells. As a result, the interval voltage that is shifted from its expected value due to variations in manufacturing conditions can automatically be set to the expected value by using the adjusting signals. Since an internal circuit operates on a correct internal voltage, operation margins can be increased. The yield of a nonvolatile semiconductor memory can thus be increased.

Abstract: The present invention is contrived to adopt a differential pair type amplifier circuit comprising a differential pair constituted by a first transistor receiving an input of a first signal and by a second transistor receiving an input of a third signal generated by outputting a second signal of which the voltage level is a power supply voltage. Elements requiring a matching are two transistors constituting the differential pair for the amplifier circuit. Because of this, the elements requiring a matching can be placed close to each other regardless of a layout between the amplifier circuits.

Abstract: A substrate is provided with a first wiring layer 111, an interlayer insulating film 132 on the first wiring layer 111, a hole 112A formed in the interlayer insulating film, a first metal layer 112 covering the hole 112A, a second metal layer 113 formed in the hole 112A, a dielectric insulating film 135 on the first metal layer 112, and second wiring layers 114-116 on the dielectric insulating film 135, wherein the first metal layer 112 constitutes at least part of the lower electrode, an area, facing the lower electrode, of the second wiring layers 114-116 constitutes the upper electrode, and a capacitor 160 is constructed of the lower electrode, the dielectric insulating film 135 and the upper electrode P1.

Abstract: An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

Abstract: A semiconductor device for fingerprint sensors reduces a mounting area of the semiconductor device and improves a processing capacity of assembling and testing process. The semiconductor device has a functional surface that provides a predetermined function. A semiconductor element has a circuit formation surface on which a plurality of electrodes are formed and a back surface opposite to the circuit formation surface. A part of the circuit formation surface functions as the functional surface. Wiring is formed on the back surface of the semiconductor element. A plurality of connection parts extends between the circuit formation surface and the back surface of the semiconductor element so as to electrically connect the electrodes to the wiring. A plurality of external connection terminals are exposed outside the semiconductor device on a side of the back surface of the semiconductor element.

Abstract: It is an object of the present invention to improve analysis accuracy of manufacture data with missing values. First, an analysis target explanatory variable is selected. The manufacture data acquired from each process is separated into a set with missing values and a set without missing values. An evaluation value for evaluating the influence of the explanatory variable on the objective variable is calculated from the manufacture data in the set with missing value and the set without missing values. The manufacture data is analyzed by matching the calculated evaluation value with a reference.

Abstract: An image processing apparatus is provided for enhancing the image processing function without having to increase the circuit scale. The image processing apparatus includes an image divider, a pixel processor, and an image coupler. If the number of horizontal pixels on the width of an input image is larger than a size of a line buffer, the image divider equally divides the input image in the vertical direction so that the resulting divided area is smaller than the number of horizontal pixels on the width of the line buffer. Then, the image divider controls an input data transfer circuit so that the pixel data of the input image may be sequentially transferred to the line buffer for each of the equally divided areas. The image processor sequentially processes the pixel data of the input image temporarily stored in the line buffer and then sends out the output pixel data.

Abstract: When a space, sandwiched by large patterns having a predetermined size or more, is exposed using a charged particle beam, the space sandwiched by the large patterns is exposed using a common block mask having the space and edge portions of the large patterns on both sides of the space, and portions other than the edge portions of the large patterns on both sides are exposed by a variable rectangular beam or by using another block mask.

Abstract: A semiconductor memory and a refresh cycle control method that reduce a standby current by properly changing a refresh cycle according to the temperature of the semiconductor memory. A temperature detection section detects the temperature of the semiconductor memory. A cycle change control section sends a cycle change signal for changing a refresh cycle when the temperature of the semiconductor memory reaches a predetermined cycle change temperature. A refresh timing signal generation section generates a refresh timing signal and changes the cycle of the refresh timing signal in response to the cycle change signal. A constant current generation circuit generates an electric current for generating the refresh timing signal. A low-temperature constant current setting circuit designates the level of the electric current generated in the case that the temperature of the semiconductor memory is lower than or equal to the cycle change temperature.

Abstract: An analog-to-digital converter conventionally performing a detection of a differential offset is replaced by a comparator 20. A reference voltage is input to a terminal on one side of the comparator 20 and each of a pair of differentials of a differential voltage signal is input to the other terminal one by one. Then, a setup of voltages of both of the pair of differentials to closer values to the reference voltage makes both voltages of the pair of differentials eventually the same, thereby making it possible to correct a differential offset.

Abstract: A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.

Abstract: A ferroelectric memory device includes a field effect transistor formed on a semiconductor substrate, an interlayer insulation film formed on the semiconductor substrate so as to cover the field effect transistor, a conductive plug formed in the interlayer insulation film in contact with the first diffusion region, and a ferroelectric capacitor formed over the interlayer insulation in contact with the conductive plug, wherein the ferroelectric capacitor includes a ferroelectric film and upper and lower electrodes sandwiching the ferroelectric film respectively from above and below, the lower electrode being connected electrically to the conductive plug, a layer containing oxygen being interposed between the conductive plug and the lower electrode, a layer containing nitrogen being interposed between the layer containing oxygen and the lower electrode, a self-aligned layer being interposed between the layer containing nitrogen and the lower electrode.

Abstract: A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.

Abstract: A semiconductor device includes a configuration memory for storing configuration data, an arithmetic unit whose circuit configuration can be reconfigured in accordance with the configuration data, and a fixed value memory for storing fixed value data to be supplied to the arithmetic unit. Since the configuration data and fixed value data to be supplied to the arithmetic unit are stored in the different memories, no data area for storing the fixed value data need be set in the configuration memory. This makes it possible to supply a predetermined fixed value to the arithmetic unit by storing only information for reading out fixed value data from the fixed value memory.

Abstract: An active region and an opposite conductivity active region are formed in a semiconductor substrate. The opposite conductivity active region is covered with a resist pattern. Impurities are implanted into a surface layer of the active region. An angle ?0 is defined as a tilt angle obtained by tilting a virtual plane perpendicular to the substrate and including an edge of the active region, toward the resist pattern by using as a fulcrum a point on the substrate nearest to the resist pattern, until the virtual plane contacts the resist pattern. The ion implantation is performed in a direction having a tilt angle larger than ?0 and allowing ions passed through the uppermost edge of the resist pattern to be incident upon an area between the resist pattern and the active region, and is not performed along a direction allowing the ions to be incident upon the active region.

Abstract: A precharge voltage generating circuit outputs any of a plurality of kinds of precharge voltages in accordance with an ambient temperature. A precharge circuit supplies the precharge voltage to a bit line during the nonaccess of a dynamic memory cell. A sense amplifier amplifies a difference between the voltage of a data signal read from the dynamic memory cell onto the bit line and the supplied precharge voltage. The precharge voltage is altered in accordance with the ambient temperature, whereby the read margin of the sense amplifier can be changed, and the worst value of the data retaining time of the memory cell can be improved. As a result, the frequency of refreshing of the memory cell can be lowered, reducing power consumption and a standby current.