Abstract: Cyclic azastannanes and cyclic oxostannanes having formulas (I) and (II) where X is an alkoxy or dialkylamino group are a new class of cyclic compounds. These compounds have desirably high vapor pressure and high purity (containing low levels of polyalkyl contaminants after purification), and have particular interest for EUV photoresist applications. Methods for preparing these compounds are described.

Abstract: A bonding structure used for forming a sealed space (for example, a container) for containing or transferring an organotin compound, wherein the bonding structure is a structure in which a first member is connected with a second member via a gasket or an O-ring, and the gasket or the O-ring is formed with a fluororesin derived from monomers of at least tetrafluoroethylene and perfluoromethyl vinyl ether.

Abstract: A bonding structure used for forming a sealed space (for example, a container) for containing or transferring an organotin compound, wherein the bonding structure is a structure in which a first metal member (for example, a lid of the container) is connected to a second metal member (for example, a container body of the container) via a metal gasket or a metal O-ring, and the metal gasket or the metal O-ring has a surface having a Vickers hardness set to be not less than lower than a Vickers hardness of a surface of a portion of the metal member, the portion being contacted with the metal gasket or the metal O-ring.

Abstract: Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.

Abstract: A method for purifying a tin compound, including: making an inert gas pass through in, or on a surface of, a liquid containing a tin compound represented by a chemical formula RSnX3, where R represents a hydrocarbon group having 1 to 30 carbon atoms optionally substituted with a halogen atom, and X represents a hydrolysable substituent, to perform stripping, before or after a distillation step of the tin compound.

Abstract: A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

Abstract: Monoorgano tin trialkoxide compounds having chemical formula R?Sn(OR)3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R? is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

Abstract: A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.

Abstract: Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

Abstract: Silicon-based tetrahydrocannabinol derivatives and methods for their synthesis are provided, in which the derivatives contain a tetrahydrocannabinol molecule and at least one silicon-based group containing Si—O—Si bonds. The derivatives are useful in topical and dermatological compositions, have potential beneficial topical properties, and enhance solubility and compatibility in topical and dermatological formulations containing the silicon-based materials.

Abstract: A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

Abstract: A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

Abstract: A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2: (RfCH2)nSnX(4-n)??(I).

Abstract: Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): in which R is a substituted or unsubstituted organic group and R? is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Abstract: Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.

Abstract: A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

Abstract: A heterofunctional poly(alkyleneoxide) according to the invention contains a first polymer terminus containing a protected, unprotected, or derivatized amine or aminoalkyl functionality and a second polymer terminus containing an unsaturated functionality. Reaction products, derivatives, and methods of making these materials are also described.

Abstract: Low molecular weight siloxane materials having one functional group are provided which have reduced tendency to form phase separated domains after polymerization. Two classes of siloxane materials are included: (1) symmetric siloxane macromonomers containing at least two monomer termini and one polymerizable functional group which is equidistant from the termini, and (2) assymetric siloxane macromonomers having at least one polymerizable functional group terminus and at least one oxygen-containing polar hydrophilic terminus selected from the group consisting of hydroxyl, ether, and polyether. Symmetric siloxane macromonomers having hydroxyl termini are useful for forming biocompatible materials, such as for contact lenses, tissue regeneration scaffold polymers, and coatings to reduce non-specific binding of proteins.

Abstract: Low molecular weight siloxane materials having one functional group are provided which have reduced tendency to form phase separated domains after polymerization. Two classes of siloxane materials are included: (1) symmetric siloxane macromonomers containing at least two monomer termini and one polymerizable functional group which is equidistant from the termini, and (2) assymetric siloxane macromonomers having at least one polymerizable functional group terminus and at least one oxygen-containing polar hydrophilic terminus selected from the group consisting of hydroxyl, ether, and polyether. Symmetric siloxane macromonomers having hydroxyl termini are useful for forming biocompatible materials, such as for contact lenses, tissue regeneration scaffold polymers, and coatings to reduce non-specific binding of proteins.

Abstract: Low molecular weight siloxane materials having one functional group are provided which have reduced tendency to form phase separated domains after polymerization. Two classes of siloxane materials are included: (1) symmetric siloxane macromonomers containing at least two monomer termini and one polymerizable functional group which is equidistant from the termini, and (2) assymetric siloxane macromonomers having at least one polymerizable functional group terminus and at least one oxygen-containing polar hydrophilic terminus selected from the group consisting of hydroxyl, ether, and polyether. Symmetric siloxane macromonomers having hydroxyl termini are useful for forming biocompatible materials, such as for contact lenses, tissue regeneration scaffold polymers, and coatings to reduce non-specific binding of proteins.