Abstract: The invention includes a sulfolane functional silane comprising a sulfolane ring, an alkoxy group, a hydrocarbon backbone, and a silyl moiety. An oxygen atom of the alkoxy group is bound to the sulfolane ring, and the hydrocarbon backbone has one to fifty carbon atoms and is bound by its first terminal carbon atom to a carbon of the alkoxy group and by its second terminal carbon atom to the silicone atom of the silyl moiety. The silyl moiety comprises at least one hydrolyzable group and/or a non-hydrolyzable group that is a substituted or unsubstituted siloxane group. A method to stabilize a silane solution is described and includes adding the sulfolane functional silane of the invention to a solution containing silane hydrosylates.

Abstract: The invention includes a trialkylsilane comprising a hydrocarbon backbone including one to ten carbon atoms; a terminal trialkylsilyl moiety having at least two alkyl groups independently comprising at least six carbon atoms; and a terminal silyl moiety that has at least one hydrolyzable group bound to a silicon of the silyl moiety. At least one of the alkyl groups of the trialkylsilyl moiety may substituted with at least one halogen, and is preferably a perfluoroalkyl group. The invention also provides methods of producing the trialysilane and substrates including the trialkysilane of the invention, as well as columns and substrates for use in chromatographic applications.

Abstract: A continuous polymerization process produces hydride-functional siloxane and organofunctional siloxane polymers, copolymers and terpolymers. The cationic polymerization takes place in a plug flow catalytic reactor packed with a heterogeneous acid catalyst. The siloxane polymers produced are optically clear, homogeneous and free of catalyst residues.

Abstract: Silsesquioxane polymers that are useful for preparing SiO2-rich ceramic coatings are obtained as the polymeric reaction products from the hydrolysis and condensation of organosilanes having a &bgr;-substituted alkyl group. A preferred silsesquioxane polymer is the polymeric reaction product obtained from &bgr;-chloroethyltrichlorosilane. More preferred silsesquioxones are those with non-halogenated alkyl groups, such as the &bgr;-acetoxyethyl- and &bgr;-hydroxyethyl-silsesquioxones. Coating compositions containing such silsesquioxane polymers dissolved in organic solvent may be applied to a substrate and converted to SiO2-rich ceramic thin layers by evaporating the solvent and heating the coated substrate at moderate temperatures.

Abstract: A class of volatile cyclic and acyclic azasilanes is provided as well as methods for their preparation which comprise heating aminoalkoxysilanes in the presence of an ammonium salt, sulfuric acid, or phosphonium salt. The cyclic azasilanes may be used for the treatment of inorganic surfaces, particularly nanoparticles, by a ring-opening reaction when non-hydrolytic deposition methods are required.

Abstract: This invention relates to a series of fluoroalkylsilane compounds of formula I. These compounds are silylation reagents which enhance the solubility of the silylated products in fluorocarbon solvents for preferred use in fluorous phase synthesis. Use of these compounds protects fragile hydrogen groups and also provides for the straightforward separation of the ultimate reaction products though fluorous phase extraction. This invention also relates to a two-step process for making compounds of formula I. The process comprises reacting an alkyldialkoxysilane with a perfluoroalkyl-substituted silane to produce a perfluoroalkyl-substituted dialkylsiloxyalkylsilane intermediate; and reacting the intermediate with halogen.

Abstract: Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600° C. Tungsten nitride precursors are also included which comprise a tungsten carbonyl compound capable of forming a tungsten nitride film in the presence of a nitrogen-containing reactant gas at a temperature of less than about 600° C.

Abstract: A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250° C. to about 650° C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.

Abstract: This invention relates to a series of fluoroalkylsilane compounds of formula I.

Abstract: The invention includes a sulfolane functional silane comprising a sulfolane ring, an alkoxy group, a hydrocarbon backbone, and a silyl moiety. An oxygen atom of the alkoxy group is bound to the sulfolane ring, and the hydrocarbon backbone has one to fifty carbon atoms and is bound by its first terminal carbon atom to a carbon of the alkoxy group and by its second terminal carbon atom to the silicone atom of the silyl moiety. The silyl moiety comprises at least one hydrolyzable group and/or a non-hydrolyzable group that is a substituted or unsubstituted siloxane group. A method to stabilize a silane solution is described and includes adding the sulfolane functional silane of the invention to a solution containing silane hydrosylates.

Abstract: A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, including introducing into a deposition chamber: (i) a substrate; (ii) a source precursor comprising titanium in a vapor state having the formula (I):

Abstract: A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250° C. to about 650° C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.

Abstract: This invention includes a process for producing an alkylsilane, comprising reducing an alkoxysilane in the presence of an alkali metal hydride in the presence of a high boiling solvent. The alkylsilane has a boiling point lower than the boiling point of the solvent, which is typically diglyme. This invention also includes a chloride-free alkylsilane formed from the reduction of an alkoxysilane in the presence of an alkali metal hydride. The alkylsilane produced according to the process of the present invention may be useful in microelectronic applications, such as in the production of chloride-free low dielectric constant materials which may be produced by the chemical vapor deposition of such silanes.

Abstract: This invention includes a process for producing an alkylsilane, comprising reducing an alkoxysilane in the presence of an alkali metal hydride in the presence of a high boiling solvent. The alkylsilane has a boiling point lower than the boiling point of the solvent, which is typically diglyme. This invention also includes a chloride-free alkylsilane formed from the reduction of an alkoxysilane in the presence of an alkali metal hydride. The alkylsilane produced according to the process of the present invention may be useful in microelectronic applications, such as in the production of chloride-free low dielectric constant materials which may be produced by the chemical vapor deposition of such silanes.

Abstract: A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, including introducing into a deposition chamber: (i) a substrate; (ii) a source precursor comprising titanium in a vapor state having the formula (I):

Abstract: A method for chemical vapor deposition of a film comprising tantalum onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a source precursor in the vapor state; and (iii) a reactant gas, and maintaining the temperature of the substrate within the chamber as from about 70.degree. C. to about 675.degree. C. for a period of time sufficient to deposit a film comprising tantalum on the substrate. The source precursor has a formula (I):Ta(F.sub.5-q-p)(X.sub.q-p)(R.sub.p) (I)wherein X is selected from the group consisting of bromine, iodine, chlorine, and combinations thereof; q is an integer from 0 to 4; p is an integer from 0 to 4; and R is selected from the group consisting of hydrogen and lower alkyl.

Abstract: Titanium and titanium nitride layers can be produced by chemical vapor deposition (CVD) processes conducted at temperatures below 475.degree. C. The layers may serve as diffusion and adhesion barriers for ultra-large scale integration (ULSI) microelectronic applications. The processes use a titanium halide precursor, such as titanium tetraiodide, and hydrogen or hydrogen in combination with nitrogen, argon, or ammonia to either produce pure titanium metal films, titanium films which alloy with the underlying silicon, or titanium nitride films. The deposition of titanium metal from titanium halide and hydrogen or the deposition of titanium nitride from titanium halide with nitrogen and hydrogen is achieved with the assistance of a low energy plasma. The process allows smooth and reversible transition between deposition of films of either titanium metal or titanium nitride by introduction or elimination of nitrogen or ammonia.

Abstract: A method for depositing copper-based films and a copper source precursor for use in the chemical vapor deposition of copper-based films are provided. The precursor includes a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor. The method includes introducing into a deposition chamber: (i) a substrate; (ii) a copper source precursor in a vapor state including a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor; and (iii) at least one transport gas, different than said copper source precursor. The reaction substrate temperature is maintained at from about 50.degree. C. to about 500.degree. C. for a period of time sufficient to deposit a copper-based film on said substrate.

Abstract: A method for depositing copper-based films and a copper source precursor for use in the chemical vapor deposition of copper-based films are provided. The precursor includes a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor. The method includes introducing into a deposition chamber: (i) a substrate; (ii) a copper source precursor in a vapor state including a mixture of at least one ligand-stabilized copper (I) .beta.-diketonate precursor; and at least one copper(II) .beta.-diketonate precursor; and (iii) at least one transport gas, different than said copper source precursor. The reaction substrate temperature is maintained at from about 50.degree. C. to about 500.degree. C. for a period of time sufficient to deposit a copper-based film on said substrate.

Abstract: A method for chemical vapor deposition of a silicon-nitrogen based film onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a haloethylsilane precursor in the vapor state; and (iii) at least one nitrogen-containing reactant gas; and maintaining the deposition temperature within the chamber as from about 200.degree. C. to about 1000.degree. C. for a period of time sufficient to deposit a silicon-nitrogen based film on the substrate. Silicon-nitrogen based films are also included which are formed by chemical vapor deposition using a haloethylsilane precursor in a vapor state and at least one reactant gas comprising nitrogen.