Patents Assigned to Genesis
  • Patent number: 6596925
    Abstract: Novel isolated plant polynucleotide promoter sequences are provided, together with genetic constructs comprising such polynucleotides. Methods for using such constructs in modulating the transcription of DNA sequences of interest are also disclosed, together with transgenic plants comprising such constructs.
    Type: Grant
    Filed: June 20, 2000
    Date of Patent: July 22, 2003
    Assignees: Genesis Research & Development Corp. Ltd., Rubicon Forests Holdings Ltd.
    Inventors: J. Ranjan Perera, Clare Eagleton, Stephen J. Rice
  • Publication number: 20030124815
    Abstract: A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane.
    Type: Application
    Filed: November 20, 2002
    Publication date: July 3, 2003
    Applicant: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Michael A. Bryan, William G. En
  • Patent number: 6586906
    Abstract: A rechargeable battery having a photovoltaic device and battery charging circuitry integral therewith. A rechargeable battery such as, for example, a Lithium battery, includes a current regulating circuit interposed between a photovoltaic device mounted on an outer surface of the battery and the terminals of the battery. In order to attain maximum power transfer between the photovoltaic device and the battery, the circuit includes a feed-forward feature that regulates the current flow from the photovoltaic cell to the battery in response to changes in the voltage output of the cell. When the voltage output (V) of the photovoltaic cell drops below a predetermined value, the current (I) flowing from the cell to the battery is decreased in accordance with the equation V=aI+b, where the coefficients a and b are constants having a value depending on the type of rechargeable battery employed.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: July 1, 2003
    Assignee: Genesis Electronics LLC
    Inventors: Jerry Bessa, Omkarnath K. Gupta, Robert Schilken, Mark Kollman
  • Patent number: 6582999
    Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
    Type: Grant
    Filed: April 5, 2001
    Date of Patent: June 24, 2003
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan Cheung
  • Publication number: 20030113983
    Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
    Type: Application
    Filed: October 9, 2002
    Publication date: June 19, 2003
    Applicant: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan W. Cheung
  • Patent number: 6573095
    Abstract: Isolated polynucleotides encoding polypeptides expressed in mammalian skin cells are provided, together with expression vectors and host cells comprising such isolated polynucleotides. Methods for the use of such polynucleotides and polypeptides are also provided.
    Type: Grant
    Filed: May 14, 1999
    Date of Patent: June 3, 2003
    Assignee: Genesis Research & Development Corporation Limited
    Inventor: Lorna Strachan
  • Publication number: 20030101478
    Abstract: Novel isolated plant polynucleotide promoter sequences are provided, together with genetic constructs comprising such polynucleotides. Methods for using such constructs in modulating the transcription of DNA sequences of interest are also disclosed, together with transgenic plants comprising such constructs.
    Type: Application
    Filed: April 30, 2002
    Publication date: May 29, 2003
    Applicant: Genesis Research and Development Corporation Limited
    Inventors: Ranjan Perera, Stephen Rice, Marion Wood, Clare Eagleton, Elizabeth Visser
  • Patent number: 6571348
    Abstract: A look ahead column redundancy circuit provides high speed memory access to both regular memory arrays and redundant memory arrays. In the preferred embodiment of the present invention, the information on both the address bus and the information on the next address bus are decoded by redundant column decoders in parallel. The decoded information from the redundant column decoders is then provided to a redundancy column pathway as the addressing information from the address bus and the next address bus is provided to a main column pathway. The information on the address bus is latched when beginning at a new column address. The information on the next address bus is latched for the next column address when operating in a burst cycle mode. The main column pathway preferably includes a latch, a main column decoder and a main column select circuit.
    Type: Grant
    Filed: July 20, 1999
    Date of Patent: May 27, 2003
    Assignee: Genesis Semiconductor, Inc.
    Inventors: Terry T. Tsai, Daniel F. McLaughlin
  • Patent number: 6566011
    Abstract: A lithium secondary battery includes a negative electrode active material. The negative electrode active material includes a primary active material and a secondary active material. The primary active material is at least one member selected from the group consisting of carbonaceous materials, Sn, Sn alloys, Sn oxides, Al, Al alloys, Pb, Pb alloys, Si and Si oxides. The secondary active material includes a lithium nitride expressed by a composition formula, Li3−xMxN, in which “M” is at least one element selected from the group consisting of transition metals and “x” is 0<“x”≦0.7. In the lithium secondary battery, the negative electrode retention is relieved efficiently, the capacity is less likely to change suddenly, and the wasting of a positive electrode material is less.
    Type: Grant
    Filed: August 1, 2000
    Date of Patent: May 20, 2003
    Assignees: Toyota Jidosha Kabushiki Kaisha, Genesis Research Institute, Inc.
    Inventors: Yasuo Takeda, Yang Jun
  • Patent number: 6566014
    Abstract: An ionic conductor according to the present invention includes an electrolyte salt for ionic conduction, an ionically conducting molecule including a molecular chain which provides an ion conducting pathway and a boroxine ring bonded to the molecular chain and trapping anions resulting from the electrolyte salt, and a structural member for dispersion and immobilization of the ionically conducting molecule and the electrolyte salt therein. The structural material gives the ionic conductor mechanical strength, the ionically conducting molecule provides an ion conducting pathway, and the electrolyte salt gives it ionic conductivity.
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: May 20, 2003
    Assignees: Toyota Jidosha Kabushiki Kaisha, Genesis Research Institute, Inc.
    Inventors: Tatsuo Fujinami, Mary Anne Mehta
  • Publication number: 20030091981
    Abstract: The present application relates to a functional assay for high-throughput screening and identification of plant genes involved in xylogenesis and secondary cell wall formation. The assay involves transforming Zinnia mesophyll cells in vitro under non-inducing or transdifferentiation-inducing conditions with DNA constructs comprising one or more polynucleotide sequences toa be tested and comparing the expression of the sequences in the non-induced and transdifferentiating cells. The assay is particularly useful for identifying promoters that are active in xylem and xylem-forming tissues and their transcriptional regulators.
    Type: Application
    Filed: November 8, 2002
    Publication date: May 15, 2003
    Applicant: GENESIS RESEARCH AND DEVELOPMENT CORP. LTD.
    Inventors: Sathish Puthigae, Jonathan Phillips, Barry Flinn, James G. Murison
  • Patent number: 6562720
    Abstract: A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000°-1300° C. While the substrate is heated to a temperature between 1000°-1300° C., the silicon surface is exposed to a gas mix comprising H2 and HCl in the chamber to smooth the silicon surface.
    Type: Grant
    Filed: February 14, 2002
    Date of Patent: May 13, 2003
    Assignees: Applied Materials, Inc., Silicon Genesis Corporation
    Inventors: Anna Lena Thilderkvist, Paul Comita, Lance Scudder, Norma Riley
  • Patent number: 6558802
    Abstract: A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.
    Type: Grant
    Filed: February 29, 2000
    Date of Patent: May 6, 2003
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan W. Cheung
  • Patent number: 6558906
    Abstract: The present invention relates to a method of screening a potential translational regulatory element of mRNA, which promotes or suppresses the translation efficiency of mRNA in a given translation system, by applying the in vitro evolution principles. Specifically, the present invention relates to a method of screening a potential translational regulatory element of mRNA, comprising the steps of synthesizing mRNAs with random oligonucleotide sequences, which are candidates of translational regulatory elements, introduced into the untranslated regions (UTRs), and selecting mRNAs with altered translation efficiency by virtue of the inserted motifs; to translational regulatory elements screened by this method; and to a method of isolating mRNA with altered translation efficiency in comparison with the native mRNA by using such a screening method.
    Type: Grant
    Filed: March 26, 2001
    Date of Patent: May 6, 2003
    Assignees: Toyota Jidosha Kabushiki Kaisha, Genesis Research Institute, Incorporated
    Inventors: Junichi Obokata, Issei Nagao
  • Publication number: 20030082724
    Abstract: Novel isolated polynucleotides associated with programmed cell death and various plant developmental mechanisms are provided, together with genetic constructs comprising such sequences. Methods for the modulation of the content, structure and metabolism of plants, and particularly for the modulation of PCD and various plant developmental mechanisms in plants, are also disclosed, the methods comprising incorporating one or more of the polynucleotides or genetic constructs of the present invention into the genome of a plant.
    Type: Application
    Filed: August 14, 2002
    Publication date: May 1, 2003
    Applicant: Genesis Research and Development Corporation Limited
    Inventors: Barry Flinn, Annette Lasham
  • Patent number: 6554046
    Abstract: A cleaving tool provides pressurized gas to the edge of a substrate to cleave the substrate at a selected interface. A substrate, such as a bonded substrate, is loaded into the cleaving tool, and two halves of the tool are brought together to apply a selected pressure to the substrate. A compliant pad of selected elastic resistance provides support to the substrate while allowing the substrate to expand during the cleaving process. Bringing the two halves of the tool together also compresses an edge seal against the perimeter of the substrate. A thin tube connected to a high-pressure gas source extends through the edge seal and provides a burst of gas to separate the substrate into at least two sheets. In a further embodiment, the perimeter of the substrate is struck with an edge prior to applying the gas pressure.
    Type: Grant
    Filed: November 27, 2000
    Date of Patent: April 29, 2003
    Assignee: Silicon Genesis Corporation
    Inventors: Michael A. Bryan, James K. Kai
  • Patent number: 6548382
    Abstract: A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantation, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled cleaving process is used to form the wafer, which is a multilayered silicon on insulator substrate. The gettering layer removes and/or attracts impurities in the wafer, which can be detrimental to the functionality and reliability of an integrated circuit device made on the wafer.
    Type: Grant
    Filed: August 4, 2000
    Date of Patent: April 15, 2003
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan W. Cheung
  • Patent number: 6544772
    Abstract: Novel polynucleotides isolated from Lactobacillus rhamnosus, as well as probes and primers, genetic constructs comprising the polynucleotides, biological materials, including plants, microorganisms and multicellular organisms incorporating the polynucleotides, polypeptides expressed by the polynucleotides, and methods for using the polynucleotides and polypeptides are disclosed.
    Type: Grant
    Filed: August 8, 2000
    Date of Patent: April 8, 2003
    Assignees: Genesis Research & Development Corp. Ltd, Via Lachia Bioscience (NZ) Ltd.
    Inventors: Matthew Glenn, Ilkka J. Havukkala, Leonard N. Bloksberg, Mark W. Lubbers, James Dekker, Anna C. Christensson, Ross Holland, Paul W. O'Toole, Julian R. Reid, Timothy Coolbear
  • Patent number: 6545688
    Abstract: A display unit designed to be scanned within a narrow horizontal scanning range irrespective of the frequency at which the horizontal lines of an image are received. If the horizontal line frequency of the received display signal does not fall within the narrow horizontal scanning range, the image frames in the display signal are scaled at least vertically such that the number of horizontal lines in each scaled image frame times the frame rate falls within the horizontal scanning range. As a result, the images can be scanned within the horizontal range for which a display unit is designed for. The scaling can be performed without using a frame buffer as the frame rate (at which the images are encoded in a display signal) equals the scanning rate.
    Type: Grant
    Filed: June 12, 2000
    Date of Patent: April 8, 2003
    Assignee: Genesis Microchip (Delaware) Inc.
    Inventors: Graham David Loveridge, Nils Anders Frisk
  • Patent number: 6544862
    Abstract: A method of forming substrates. The method includes providing a donor substrate; and forming a particle accumulation region at a selected depth in the donor substrate. The method includes diffusing a plurality of particles into the particle accumulation region to add stress to the particle accumulation region; and separating a thickness of material above the selected depth in the donor substrate.
    Type: Grant
    Filed: January 14, 2000
    Date of Patent: April 8, 2003
    Assignee: Silicon Genesis Corporation
    Inventor: Michael A. Bryan