Patents Assigned to Genesis
  • Patent number: 6483447
    Abstract: A digital display unit adjusting the phase of a sampling clock based on the examination of a display data signal contained in a received analog display signal. The phase may be adjusted by determining a boundary between display data portions representing successive pixel data elements. As the boundaries provide the timing information related to the source clock, the phase of the sampling clock can be adjusted when ever the boundaries can be determined accurately. The phase of the sampling clock can be adjusted potentially every sampling clock cycle if the boundaries can be determined. The area for examination can be minimized by first determining an expected boundary based on synchronization signal accompanying the analog display data, and examining only a small area surrounding the expected boundary.
    Type: Grant
    Filed: July 7, 1999
    Date of Patent: November 19, 2002
    Assignee: Genesis Microchip (Delaware) Inc.
    Inventor: Alexander Julian Eglit
  • Publication number: 20020169302
    Abstract: Isolated polynucleotides encoding polypeptides expressed in bovine mammary gland tissue are provided, together with genetic constructs and host cells comprising such isolated polynucleotides. Methods for the use of such polynucleotides and polypeptides are also provided.
    Type: Application
    Filed: February 19, 2002
    Publication date: November 14, 2002
    Applicant: Genesis Research and Development Corp. Ltd.
    Inventors: Illka J. Havukkala, Matthew Glenn, Murray R. Grigor, Adrian J. Molenaar
  • Patent number: 6480586
    Abstract: To control multiple electronic devices in homes and other buildings through telephone lines, a user may establish communication by utilizing Caller ID supplied by a local telephone service supplier and, where such Caller ID service is unavailable, user generated Caller ID tones and simultaneous FAX pilot tones and data transmission, to signal to a device to be controlled or to a receiving station that instructions are received and communication is required.
    Type: Grant
    Filed: July 25, 2000
    Date of Patent: November 12, 2002
    Assignee: Genesis Engineering, Inc.
    Inventors: Steven Hayes, Alan McReynolds
  • Publication number: 20020164625
    Abstract: Isolated polynucleotides encoding histatin polypeptides expressed in bovine tissues, including mammary gland and paratoid salivary gland tissues, are provided, together with genetic constructs and host cells comprising such isolated polynucleotides. Methods for the use of such polynucleotides and polypeptides are also provided.
    Type: Application
    Filed: February 19, 2002
    Publication date: November 7, 2002
    Applicant: Genesis Research and Development Corp. Ltd.
    Inventors: Matthew Glenn, Murray R. Grigor, Adrian J. Molenaar, Stephen R. Davis
  • Patent number: 6476209
    Abstract: Novel polynucleotides isolated from Lactobacillus rhamnosus, as well as probes and primers, genetic constructs comprising the polynucleotides, biological materials, including plants, microorganisms and multicellular organisms incorporating the polynucleotides, polypeptides expressed by the polynucleotides, and methods for using the polynucleotides and polypeptides are disclosed.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: November 5, 2002
    Assignees: Genesis Research & Development Corporation Ltd., Via Lactia BioScience (NZ) Ltd.
    Inventors: Matthew Glenn, Mark W. Lubbers, James Dekker
  • Patent number: 6458672
    Abstract: A method for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate. A step of increasing a built-in energy state of the substrate is also included.
    Type: Grant
    Filed: November 2, 2000
    Date of Patent: October 1, 2002
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan W. Cheung
  • Patent number: 6458723
    Abstract: An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel (10), in the vacuum chamber, having a plurality of circumferentially distributed substrate holding positions. Each of the substrate holding positions comprises a substrate holder (17), which includes an elastomer overlying the substrate holder (17) and a thermal insulating material (71) (e.g., quartz, silicon, ceramics, and other substantially non-compliant materials) overlying the elastomer (72). The present thermal insulating material increases a temperature of a substrate as it is implanted.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: October 1, 2002
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Michael A. Bryan, William G. En
  • Patent number: 6459426
    Abstract: A monolithic integrated circuit for use in a digital display unit. The circuit may include an analog-to-digital converter (ADC), a scaler and a clock recovery circuit. The present invention enables the integration of at least these components into a single monolithic integrated circuit while maintaining reasonable display quality. Specifically, the monolithic integrated circuit is designed for substantial immunity from noise, which may otherwise result from integration.
    Type: Grant
    Filed: August 17, 1998
    Date of Patent: October 1, 2002
    Assignee: Genesis Microchip (Delaware) Inc.
    Inventors: Alexander Julian Eglit, Tzoyao Chan, John Lattanzi
  • Patent number: 6453616
    Abstract: An astragal used with exterior double door installations, such as french doors. When attached to the edge of the generally inactive door, the astragal provides a door stop for the active door, a seal to prevent intrusion of water, and a lock for the inactive door. The invention particularly pertains to extruded metal astragals capable of increasing the resistance of the double door system to high wind conditions. The astragal comprises a longitudinally extending base member that has at least one longitudinally extending channel and a pair of spaced apart outwardly extending legs. At least one bolt is slidably inserted in the channel adjacent to one of the first and second ends of the channel. The astragal is attached to the door by at least one cleat whose spaced apart arms engage the legs of the base member providing resistance to the astragal rocking in relation to the door edge when the doors are under wind forces.
    Type: Grant
    Filed: March 28, 2001
    Date of Patent: September 24, 2002
    Assignee: Genesis Architectural Products, Inc.
    Inventor: James Richard Wright
  • Patent number: 6455399
    Abstract: In a specific embodiment, the present invention provides a novel process for smoothing a surface of a separated film. The present process is for the preparation of thin semiconductor material films. The process includes a step of implanting by ion bombardment of the face of the wafer by means of ions creating in the volume of the wafer at a depth close to the average penetration depth of the ions, where a layer of gaseous microbubbles defines the volume of the wafer a lower region constituting a majority of the substrate and an upper region constituting the thin film. A temperature of the wafer during implantation is kept below the temperature at which the gas produced by the implanted ions can escape from the semiconductor by diffusion. The process also includes contacting the planar face of the wafer with a stiffener constituted by at least one rigid material layer.
    Type: Grant
    Filed: March 14, 2001
    Date of Patent: September 24, 2002
    Assignee: Silicon Genesis Corporation
    Inventors: Igor J. Malik, Sien G. Kang
  • Patent number: 6451604
    Abstract: Novel isolated polynucleotides associated with programmed cell death and various plant developmental mechanisms are provided, together with genetic constructs comprising such sequences. Methods for the modulation of the content, structure and metabolism of forestry plants, and particularly for the modulation of PCD and various plant developmental mechanisms in forestry plants, are also disclosed, the methods comprising incorporating one or more of the polynucleotides or genetic constructs of the present invention into the genome of a forestry plant.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: September 17, 2002
    Assignees: Genesis Research & Development Corporation Limited, Fletcher Challenge Forests Limited
    Inventors: Barry Flinn, Annette Lasham
  • Patent number: 6450490
    Abstract: A quick change fixture mounting arrangement includes a pair of mating ball-and-socket connectors at the headstock end of the fixture and a ball joint coupler at the tailstock end of the fixture. This arrangement allows for some misalignment of the fixture relative to the axis of rotation and permits the fixture to be rotated about a second, external axis of rotation.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: September 17, 2002
    Assignee: Genesis Systems Group, Ltd.
    Inventors: Jan C. Mangelsen, John W. Brewer, Michael P. Skahill
  • Patent number: 6448152
    Abstract: A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabricated. Subsequently, a customer may place an order for silicon-on-insulator (SOI) wafers which share defined parameters. Therefore, a prefabricated donor wafer and handle wafer are selected based on the customer's defined parameters and then bonded together. Next, the donor wafer is cleaved from the handle wafer wherein the handle wafer retains the silicon layer of the donor wafer. The silicon layer thickness of the handle wafer may be altered to meet the customer's parameters. For example, an epitaxial smoothing process may decrease the silicon layer thickness while an epitaxial thickening process may increase the silicon layer thickness.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: September 10, 2002
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Sien G. Kang, Igor J. Malik
  • Patent number: 6438874
    Abstract: A hydraulic rotary grinder for attachment to construction machinery such as an excavator, consisting of a rotating drum having a hollow core and a plurality of attached replaceable grinding tips. A hydraulic motor rotates the drum, and is secured within the hollow core and activated by the hydraulic system of the construction machinery. A planetary gearbox is associated with the hydraulic motor to provide speed changes. At least one weight within the hollow core provides shock absorption and additional mass to the rotating drum. A heat-absorbing liquid within the hollow core absorbs heat from the grinding operation and a seal prevents the heat-absorbing liquid from leaking out of the drum. A number of water nozzles may be mounted on the apparatus for dust suppression. A second hydraulic motor may be provided for increased torque and grinding capacity.
    Type: Grant
    Filed: September 8, 2000
    Date of Patent: August 27, 2002
    Assignee: Genesis Equipment and Manufacturing, Inc.
    Inventors: Kenneth R. LaBounty, Ross D. Christenson, Daniel P. Jacobson
  • Publication number: 20020113491
    Abstract: A structure is provided for installing in a motorcycle an anti-theft device capable of reporting its position by wirelessly transmitting at least identifying information utilizing the GPS or PHS positioning system. The structure includes a receptacle and an openable cover that can be locked to secure the receptacle, and the anti-theft device is installed in the receptacle. The receptacle can be a helmet box formed in the motor cycle and cover the can be an openable and lockable motorcycle seat. The structure conceals the anti-theft device, protects it from vibration and invasion of rainwater, and can include a case with enhanced waterproofing capability in which the anti-theft device is accommodated so that an indicator thereof is visible through a transparent window.
    Type: Application
    Filed: April 1, 2002
    Publication date: August 22, 2002
    Applicant: Genesis Microchip Corporation of Aliviso
    Inventors: Alexander Julian Eglit, Tzoyao Chan, John Lattanzi
  • Patent number: 6436898
    Abstract: The present invention provides polypeptides comprising an immunogenic epitope of a M. vaccae protein, polynucleotides encoding such polypeptides, and fusion proteins comprising at least one such polypeptide, together with DNA constructs comprising at least one inventive polynucleotide. Compositions comprising such polypeptides, polynucleotides, fusion proteins and/or DNA constructs may be employed in the treatment of infectious diseases and immune disorders.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: August 20, 2002
    Assignee: Genesis Research and Development Corporation Limited
    Inventor: Alain Delcayre
  • Patent number: 6430240
    Abstract: A receiver to recover data encoded at high speed in a signal over a serial communication channel. A static phase determination circuit indicates whether the signal is early, late or neutral relative to a sampling clock. The sampling clock is used to oversample the signal to generate multiple samples. A token analyzer examines the transitions around a current symbol to determine any short term phase shifts of the boundaries between symbols. The short term phase shifts and the static phase together may be used to accurately select the samples representing the symbols without requiring extensive processing.
    Type: Grant
    Filed: May 30, 2001
    Date of Patent: August 6, 2002
    Assignee: Genesis Microchip (Delaware) Inc.
    Inventor: Alexander Julian Eglit
  • Publication number: 20020090758
    Abstract: A process for forming an integrated circuit device structure. The process includes forming a first gate layer on a thickness of material on a donor substrate. The donor substrate has a cleave region underlying the gate layer. The process also includes joining the donor substrate to a handle substrate where the gate layer face the handle substrate; and separating the thickness of material at the cleave region from the donor substrate to define a handle substrate comprising the gate layer and an overlying thickness of material. The process forms a plurality of second gate structures on the thickness of material, where at least one of the first gate structures facing one of the second gate structures forming a channel region therebetween.
    Type: Application
    Filed: September 18, 2001
    Publication date: July 11, 2002
    Applicant: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan Cheung
  • Patent number: 6413837
    Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: July 2, 2002
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan Cheung
  • Publication number: 20020081823
    Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a weakened region in a selected manner at a selected depth (20) underneath the surface. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
    Type: Application
    Filed: March 4, 2002
    Publication date: June 27, 2002
    Applicant: Silicon Genesis Corporation
    Inventors: Nathan W. Cheung, Francois J. Henley