Patents Assigned to Genesis
  • Lithium-ion-conductive solid electrolyte and solid-electrolyte lithium battery
    Patent number: 6277524
    Abstract: A lithium-ion-conductive solid electrolyte includes a lithium-ion-conductive substance expressed by a general formula Li2S-GeS2-X wherein “X” is at least one member selected from the group consisting of Ga2S3 and ZnS, or Li2S-SiS2-P2S5. It is superb in terms of stability and safety at elevated temperatures, since it is a crystalline solid of high ion conductivity. It can be applied to a solid electrolyte for lithium batteries.
    Type: Grant
    Filed: December 8, 1998
    Date of Patent: August 21, 2001
    Assignees: Toyota Jidosha Kabushiki Kaisha, Genesis Research Institute, Inc.
    Inventor: Ryoji Kanno
  • Side-by-side robot workcell
    Patent number: 6276284
    Abstract: A side-by-side robot workcell includes two tables each of which is movable from a work position to a load position. Linkages are connected to the tables and cause the tables to have a slow speed at the time the tables approach either the load or the work position, and a faster speed in the middle of the movement between the work and load positions.
    Type: Grant
    Filed: October 22, 1999
    Date of Patent: August 21, 2001
    Assignee: Genesis Systems Group
    Inventors: Fred K. Remley, Jan C. Mangelsen
  • Method for non mass selected ion implant profile control
    Patent number: 6274459
    Abstract: A method for implanting a substrate face using a plasma processing apparatus (10). The method includes providing a substrate (e.g., wafer, panel) (22) on a face of a susceptor. The substrate has an exposed face, which has a substrate diameter that extends from a first edge of the substrate to a second edge of the substrate across a length of the substrate. The method also includes forming a plasma sheath (26) around the face of the substrate. The plasma sheath has a dark space distance “D” that extends in a normal manner from the exposed face to an edge of the plasma sheath. The dark space distance and the substrate diameter comprise a ratio between the dark space distance and the substrate diameter. The ratio is about one half and less, which provides a substantially uniform implant.
    Type: Grant
    Filed: February 16, 1999
    Date of Patent: August 14, 2001
    Assignee: Silicon Genesis Corporation
    Inventor: Chung Chan
  • Receiver to recover data encoded in a serial communication channel
    Patent number: 6272193
    Abstract: A receiver to recover data encoded at high speed in a signal over a serial communication channel. A static phase determination circuit indicates whether the signal is early, late or neutral relative to a sampling clock. The sampling clock is used to oversample the signal to generate multiple samples. A token analyzer examines the transitions around a current symbol to determine any short term phase shifts of the boundaries between symbols. The short term phase shifts and the static phase together may be used to accurately select the samples representing the symbols without requiring extensive processing.
    Type: Grant
    Filed: September 27, 1999
    Date of Patent: August 7, 2001
    Assignee: Genesis Microchip Corp.
    Inventor: Alexander Julian Eglit
  • Collection devices for plasma immersion ion implantation
    Patent number: 6269765
    Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201) and collection devices (221). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. The collection device accumulates charge that can detrimentally influence the substrate during processing. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.
    Type: Grant
    Filed: October 1, 1998
    Date of Patent: August 7, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Paul K. Chu, Chung Chan
  • Method and apparatus implemented in an automatic sampling phase control system for digital monitors
    Patent number: 6268848
    Abstract: An automatic sampling control system for digital monitors. A clock generation circuit generates a sampling clock. A phase controller modifies the phase of the sampling clock by a phase amount. An ADC samples a frame of an analog display signal to generate digital samples. A value which is a function of the samples is generated. The function generally generates a larger value with correspondingly large sample values. The phase amount is modified for successive image frames until a maximum function value is generated. When successive image frames do not change substantially in image content, the phase amount represents the optimal phase change for the sampling clock. If the image content is changing substantially, the phase adjustment may be disabled.
    Type: Grant
    Filed: October 23, 1998
    Date of Patent: July 31, 2001
    Assignee: Genesis Microchip Corp.
    Inventor: Alexander Julian Eglit
  • Mole control system
    Patent number: 6264969
    Abstract: A method is described for controlling or exterminating moles through the use of a bait composition in the form of a gel, paste, or grease. The composition includes an attractant and an active ingredient capable of killing vertebrate pests. The composition is injected into a mole tunnel through a small diameter nozzle, tube or needle to avoid digging open the tunnel or causing it to collapse.
    Type: Grant
    Filed: March 29, 1999
    Date of Patent: July 24, 2001
    Assignee: Genesis Laboratories, Inc.
    Inventor: Richard M. Poche
  • Method and apparatus for video line multiplication with enhanced sharpness
    Patent number: 6266092
    Abstract: A method of de-interlacing used to convert an interlaced video signal to a progressively scanned format utilizing vertical temporal filtering to generate the missing lines, utilizing appropriate filter coefficients to give a desired vertical frequency response, and filter utilizing coefficients such that the total combined contribution from all fields is unity while the total contribution from each individual field is chosen so as to boost higher temporal frequencies which has the perceived effect of increasing the sharpness of moving edges. Furthermore, in order to avoid certain unwanted artifacts, the lines of the current field are modified using a vertical temporal filter with similar temporal boosting properties to that which was used to generate the missing lines.
    Type: Grant
    Filed: May 12, 1998
    Date of Patent: July 24, 2001
    Assignee: Genesis Microchip Inc.
    Inventors: Zhongde Wang, Steve Selby, Lance Greggain
  • Wafer edge engineering method and device
    Patent number: 6265328
    Abstract: The present invention provides an apparatus (400) (500) for abating edge material from a substrate, e.g., SOI. The apparatus includes, among other elements, a housing and a rotatable member (401) coupled to the housing. The rotatable member is a susceptor, which is relatively flat for securing a substrate. A movable dispensing head (421) is coupled to the housing and is overlying the rotatable member. The movable dispensing head (421) is operable to emit a stream of directed fluid to one or more locations of the susceptor. The apparatus also includes a fluid source, which is coupled to the movable dispensing head. The fluid source provides fluid to ablate material from the substrate.
    Type: Grant
    Filed: January 28, 1999
    Date of Patent: July 24, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan Cheung, William G. Eng, Igor J. Malik
  • Nozzle for cleaving substrates
    Patent number: 6263941
    Abstract: A cleaving tool provides pressurized gas to the edge of a substrate in combination with a sharpened edge to cleave the substrate at a selected interface. The edge of the tool is tapped against the perimeter of a substrate, such as a bonded substrate, and a burst of gas pressure is then applied at approximately the point of contact with the edge of the tool. The combination of mechanical force and gas pressure separates the substrate into two halves at a selected interface, such as a weakened layer in a donor wafer.
    Type: Grant
    Filed: August 10, 1999
    Date of Patent: July 24, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Michael A. Bryan, James K. Kai
  • Methods for producing genetically modified plants, genetically modified plants, plant materials and plant products produced thereby
    Patent number: 6255559
    Abstract: Methods for producing genetically modified plants, particularly woody plants, and most particularly plants of the Eucalyptus and Pinus species, involve transformation of target plant material with a desired genetic construct and regeneration of the transformed plant material using an adventitious shoot bud system. The methods provide a high transformation efficiency and substantially reduce the duration of the transformation and regeneration protocols. Stem segments of a target plant are transformed using Agrobacterium-mediated techniques, and adventitious shoot buds are regenerated from the Agrobacterium-infected stem segments. Preferred culture media, including selection media, and improved plant culture techniques are disclosed.
    Type: Grant
    Filed: September 15, 1998
    Date of Patent: July 3, 2001
    Assignees: Genesis Research & Development Corp. Ltd., Fletcher Challenge Forests Ltd.
    Inventor: Kheng Tuan Cheah
  • Controlled cleavage process and device for patterned films using patterned implants
    Patent number: 6248649
    Abstract: A technique for forming a film of material from a donor substrate. The technique has a step of introducing energetic particles in a selected patterned manner through a surface of a donor substrate having devices to a selected depth underneath the surface, where the particles have a relatively high concentration to define a donor substrate material above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate at the selected depth, whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
    Type: Grant
    Filed: June 17, 1999
    Date of Patent: June 19, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan W. Cheung
  • Economical silicon-on-silicon hybrid wafer assembly
    Patent number: 6245161
    Abstract: An economical hybrid wafer utilizing a lower-quality, lower cost transfer substrate to support a higher-quality thin film. A high-quality thin film (2101) is separated from a donor wafer (2100) and bonded to a transfer, or target, substrate (46). The donor wafer is preferably single-crystal silicon optimized for device fabrication, while the transfer substrate provides mechanical support. The thin film is not grown on the transfer substrate, and thus defects in the transfer substrate are not grown into the thin film. A low-temperature bonding process can provide an abrupt junction between the target wafer and the thin film.
    Type: Grant
    Filed: February 19, 1998
    Date of Patent: June 12, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, Nathan W. Cheung
  • Compositions isolated from stromal cells and methods for their use
    Patent number: 6242419
    Abstract: Isolated polynucleotides encoding polypeptides expressed in mammalian fsn -/- lymph node stromal cells are provided, together with expression vectors and host cells comprising such isolated polynucleotides. In certain embodiments such polynucleotides encode members of the fibroblast growth factor receptor family. Methods for the use of such polynucleotides and polypeptides are also provided.
    Type: Grant
    Filed: August 26, 1999
    Date of Patent: June 5, 2001
    Assignee: Genesis Research & Development Corporation Ltd.
    Inventors: Lorna Strachan, Matthew Sleeman, Nevin Abernethy, Rene Onrust, Anand Kumble, Greg Murison
  • Method and apparatus for comparing frequently the phase of a target clock signal with the phase of a reference clock signal enabling quick synchronization
    Patent number: 6232952
    Abstract: A phase comparator circuit which can compare the phase of a target clock signal with the phase of a reference clock signal with a short comparison cycle. An auxiliary waveform representative of the incremental phase of each of the reference and target clock signals may be generated, and samples on the auxiliary waveforms may be compared to determine the relative phase. The result of the comparison can be used to adjust of the phase of the target clock signal. As several samples can be taken on the auxiliary waveforms, the present invention enables frequent phase comparisons. The frequent comparisons may enable the target clock signal to be synchronized quickly with the reference clock signal. The invention has particular application in display units using phase lock loops (PLLs).
    Type: Grant
    Filed: September 30, 1998
    Date of Patent: May 15, 2001
    Assignee: Genesis Microchip Corp.
    Inventor: Alexander Julian Eglit
  • Contoured platen design for plasma immerson ion implantation
    Patent number: 6228176
    Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a cotoured underlying surface (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The contoured underlying surface deflects impinging ions in a direction away from the substrate surface, thereby reducing a possibility of particulate contamination on the substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.
    Type: Grant
    Filed: June 3, 1998
    Date of Patent: May 8, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Paul K. Chu, Chung Chan
  • Method for surface treatment of substrates
    Patent number: 6221774
    Abstract: A polishing pad (24) is rotated about an axis parallel to a surface (10) of a semiconductor wafer (12). The polishing pad (24) is supported by a roller (22) that receives fluid (38) and distributes the fluid through the polishing pad (24) across the surface of the wafer. The surface (10) of the wafer is moved in relation to the polishing pad so that the wafer surface is smoothed, or touch-polished, with or without the use of abrasive slurry. In one embodiment the wafer is rotated between an upper roller assembly (20) and a lower roller assembly (14). In another embodiment, the polishing pad is held at an angle to the surface of the wafer to remove a ridge of material from a donor wafer for re-use in a thin film transfer process.
    Type: Grant
    Filed: April 5, 1999
    Date of Patent: April 24, 2001
    Assignee: Silicon Genesis Corporation
    Inventor: Igor J. Malik
  • Substrate cleaving tool and method
    Patent number: 6221740
    Abstract: A cleaving tool provides pressurized gas to the edge of a substrate to cleave the substrate at a selected interface. A substrate, such as a bonded substrate, is loaded into the cleaving tool, and two halves of the tool are brought together to apply a selected pressure to the substrate. A compliant pad of selected elastic resistance provides support to the substrate while allowing the substrate to expand during the cleaving process. Bringing the two halves of the tool together also compresses an edge seal against the perimeter of the substrate. A thin tube connected to a high-pressure gas source extends through the edge seal and provides a burst of gas to separate the substrate into at least two sheets. In a further embodiment, the perimeter of the substrate is struck with an edge prior to applying the gas pressure.
    Type: Grant
    Filed: August 10, 1999
    Date of Patent: April 24, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Michael A. Bryan, James K. Kai
  • Source data interpolation method and apparatus
    Patent number: 6219464
    Abstract: A method of generating an upsampled target pixel positioned between two lines of input source data includes the step of comparing pixels of different lines of the source data in a region surrounding the upsampled target pixel to be generated in at least two different directions. An interpolation direction based on the comparison is selected and interpolations between selected pixels of the source data in the determined interpolation direction are carried out to compute intermediate pixels on a line segment passing through the upsampled target pixel. An interpolation between the intermediate pixels is carried out to generate the upsampled target pixel. An apparatus for performing the method is also disclosed.
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: April 17, 2001
    Assignee: Genesis Microchip Inc.
    Inventors: Lance Greggain, Calvin Ngo
  • Enhanced plasma mode and computer system for plasma immersion ion implantation
    Patent number: 6213050
    Abstract: A novel plasma treatment system (200) including one or more novel computer codes. These codes provide a high density plasma for plasma immersion ion implantation applications.
    Type: Grant
    Filed: December 1, 1998
    Date of Patent: April 10, 2001
    Assignee: Silicon Genesis Corporation
    Inventors: Wei Liu, Michael A. Bryan, Ian S. Roth