Abstract: During ion implantation, beam heating of the substrates must be reduced to eliminate self-annealing of the wafers during implant and to eliminate damager to masking materials, principally photoresist, that is mounted on the surface of the wafers. In this work, we describe a technique which may be used with both single-wafer and batch ion implantation systems to reduce transient wafer temperatures during implant.

Abstract: Apparatus including a support and purge gas supply prevents edge and backside coating on a wafer in manufacture of integrated circuits. Various enclosure elements and methods are disclosed for containing and directing purge gas, and a CVD system is provided incorporating the elements of the invention.

Abstract: A chuck in a coating chamber in a CVD system has a hearth for providing heat to a substrate and an interchangeable chuck surface mounted on the hearth for supporting a substrate to be coated during processing. In preferred embodiment there are a plurality of chucks in a system. Excessive coating on surfaces in the CVD chamber other than substrate surfaces to be coated is substantially removed periodically by venting the chamber and replacing the interchangeable chuck faces. Also in a preferred embodiment, an interlocking feature operable by temperature is provided to secure the chuck faces during operation and to release them for interchanging. Also in a preferred embodiment heat transfer between the hearth and the chuck is enhanced by rings and grooves that increase surface area for heat transfer.

Abstract: A system for depositing a film on a substrate in a CVD process has a second-source injection sub-system for injecting a control gas. The deposition rate of the material deposited in the CVD process is a function of the concentration of the control gas at the point that material is deposited. The second source injection sub-system provides a concentration gradient of the control gas relative to the substrate surface coated, and alters the thickness uniformity of the film. By controlling the gradient one may control the thickness uniformity profile. In another embodiment, the invention applies to dry etching with reactive gas, and the etching rate is controlled by second source provision of a control gas.

Abstract: An apparatus for preventing edge and backside coating during CVD processing supports a wafer on flexible supports within a purge cavity in a pedestal such that a movable clamp ring deforms the supports, forms a slot with the frontside of the wafer around the periphery of the wafer and by contacting the pedestal isolates the purge cavity from the coating chamber except for the slot. The wafer is heated by a pyrolytic carbon heater in the cavity and purge gas is fed to the purge cavity to flow through the slot and purge coating gas from diffusing into the purge cavity to coat the heater or the edge or backside of the wafer. In an alternative embodiment plural pedestals allow processing of plural wafers in a single cycle, and a vacuum lock and automatic handling devices are provided.

Abstract: An etchback apparatus for use in integrated circuit processing after via fill to remove excess metal and leave plugged vias, has a sacrificial ring with a surface consisting substantially of a metal that etches much like the metal used to fill the vias. The excess surface area in the process provides sacrificial metal so microloading is avoided. he metal used to fill the vias.

Abstract: In ion implantation apparatus, a pair of electrodes is positioned about the ion beam near the place where ions strike the target in which they are implanted. One electrode has a positive potential applied to it, and the electron current collected at this electrode is measured. The other electrode has a negative potential applied to it, and the positive ion current collected at this electrode is separately measured. The magnitude of the two currents are added together and used as a signal to compensate for reduction in beam current collected caused by charge exchange phenomena.

Abstract: As geometries of semiconductor devices shrink in size and the number of circuits per unit area increase, a number of the ion implants required to fabricate these devices will use very low energies (as low as 2 keV). In the present invention, a technique is utilized that generates substantial beam currents at low energies utilizing ion sources that are standard in the industry. Molecular ions are extracted from the plasma of the ion source at voltages numerically higher than the desired electron voltage at which the desired atomic ions are to strike the target, and are then dissociated into components which include the desired atomic ions moving with an energy which is a fraction of that at which the molecular ions were extracted.

Abstract: Ion accelerator characterized in that it is able to use not only a negative ion beam, but also a positive ion beam and a neutral beam, increases the efficiency of the use of the beam, and increases beam current, by using a positive ion source and a charge exchange cell, producing a negative ion beam, and providing, in a tandem type accelerator which uses this, a pre-analyzing magnet having changeable polarity and a pre-focusing lens, a beam neutralizer, and an accelerator terminal, shorting rod.

Abstract: A method of selective etching of native oxide on a substrate is disclosed in which hydrogen halide vapor and water vapor are exposed to the substrate surface under appropriate conditions and long enough to remove native oxide but not long enough to remove any significant amount of other oxides. Treating conditions are maintained to prevent water vapor from condensing on the substrate until sufficient native oxide is etched so that substantially all the native oxide will be etched before appreciable other oxides are etched.

Abstract: A chemical vapor deposition process performed at a temperature below 440 degrees C. for blanket tungsten deposition as a step in manufacturing integrated circuits deposits an integrated film suitable for voidless fill of vias as small as 0.5 microns in width and with aspect ratios of more than 2, while providing resistivity well below 100 micro-ohms per square, film stress generally in the mid 7E+09 dynes per square centimeter and below, and reflectivity of more than 40%, measured relative to silicon at 436 nanometer wavelength for 1 micron film thickness, while avoiding the use of nitrogen in the process.

Abstract: A power assist device for a wheelchair comprising a body, a drive wheel connected to the body and being movable between a raised position and a lowered surface engaging position, attachments for securing the body to the frame, a first motor for driving said drive wheel at least when the drive wheel is in the lowered surface engaging position, a second motor connected to the drive wheel for raising and lowering said drive wheel, a biaser, for biasing the drive wheel into surface engaging driving contact, a manually initiated electronic controller for controlling the power assist device, and a source of electrical power.

Abstract: A target structure is provided for use in a magnetically enhanced diode sputter coating source having a sputtering target which at end-of-life has an eroded surface with a known shape. The sputtering target has a non-sputtered profiled back surface conforming substantially in shape to the eroded surface at end-of-life. A backing plate is bonded to the sputtering target which has a bonding surface complementary to the non-sputtered back surface of the sputtering target and is designed to mate therewith. A method is provided for fabricating the target structure and bonding the sputtering target to the backing plate by isostatic pressing.

Abstract: An ion source of high ion yield, especially boron yield, is provided with a boron compound of high melting point and low work function such as LaB.sub.6 (lanthanum hexaboride) at a suitable location inside the arc chamber of the ion source, which operates on the principle of ion production by using a hot cathode to produce hot electrons.

Abstract: An apparatus for preventing edge and backside coating during CVD processing supports a wafer on flexible supports within a purge cavity in a pedestal such that a movable clamp ring deforms the supports, forms a slot with the frontside of the wafer around the periphery of the wafer and by contacting the pedestal isolates the purge cavity from the coating chamber except for a the slot. The wafer is heated by a pyrolytic carbon heater in the cavity and purge gas is fed to the purge cavity to flow through the slot and purge coating gas from diffusing into the purge cavity to coat the heater or the edge or backside of the wafer. In an alternative embodiment plural pedestals allow processing of plural wafers in a single cycle, and a vacuum lock and automatic handling devices are provided.

Abstract: A method of detecting the amount of C-14 in a sample, comprising the following steps:ionizing the sample to form a negative-ion beam; deflecting said beam in a magnetic field and directing the deflected beam through a first acceptance aperture to remove all negative ions except mass-14 particles; accelerating said mass-14 negative ions to an energy E of the order of 10 MeV by a high voltage electrostatic field; stripping three electrons from a majority of said negative ions to form doubly-charged positive ions; deflecting said doubly-charged positive ions in an electrostatic deflecting field through 180.degree. and directing the deflected beam through a second acceptance aperture to remove particles in other than the 2.sup.

Abstract: A Rutherford backscattering analyzer comprising in combination:a hollow electrode,a voltage source for impressing upon said hollow electrode a positive voltage of the order of 10.sup.

Abstract: A seal ring presses against a wafer on a CVD chuck continuously around the outer periphery of the wafer, and with sufficient force to hold the backside of the wafer against the chuck, so no CVD material may deposit on the backside of the wafer. The seal ring has one surface for contacting the frontside of the wafer and a second surface that extends close to the CVD chuck, so the edge of the wafer is also excluded from CVD coating. With use of the wafer seal ring apparatus and method, CVD coating is confined to the frontside of a wafer. In a preferred embodiment, an apparatus with a slide operated by a cam lever and a tension spring for moving the seal ring and pressing it against a wafer on a CVD chuck is used with each of multiple chucks attached to a rotatable turret within a CVD chamber.

Abstract: An apparatus is provided for obtaining very high quality films by chemical vapor deposition in situations where the deposition is mass transport limited. In accordance with the preferred embodiments, there is provided a vacuum housing which is actively cooled to a temperature below which deposition occurs, while at the same time the wafers are being heated to cause deposition at the wafer surfaces. Also provided are mixing chamber systems to ensure that reactant gases are well mixed and distributed evenly over each wafer surface. Mass transport control is further enhanced by providing an exhaust manifold which scavenges reactant gases from locations distributed throughout the system to achieve an even exhaust. Also provided is a method for depositing silicon-rich tungsten silicides using the above apparatus.

Abstract: A composite film is provided which has a first layer of WSi.sub.x, where x is greater than 2, over which is disposed a second layer of a tungsten complex consisting substantially of tungsten with a small amount of silicon therein, typically less than 5%. Both layers are deposited in situ in a cold wall chemical vapor deposition chamber at a substrate temperature of between 500.degree. and 550.degree. C.. Before initiating the deposition process for these first and second layers, the substrate onto which they are to be deposited is first plasma etched with NF.sub.3 as the reactant gas, then with H.sub.2 as the reactant gas, both steps being performed at approximately 100 to 200 volts self-bias. WSi.sub.