Patents Assigned to GLO AB
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Patent number: 10276764Abstract: A micro-lensed, light emitting device including, a backplane, light emitting diodes (LEDs) disposed on the backplane, an encapsulation layer encapsulating the LEDs, and micro-lenses disposed on the encapsulation layer and configured to reduce an emission angle of light emitted from the LEDs.Type: GrantFiled: November 27, 2017Date of Patent: April 30, 2019Assignee: GLO ABInventors: Michael Jansen, Sheng-Min Wang, Hui-Yu Huang
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Patent number: 10241253Abstract: A light bar includes a plurality of light emitting diode (LED) clusters which extend along a lengthwise direction of the light bar from a first end of the light bar to an opposite second end of the light bar. Each LED cluster includes at least three different types of LEDs. A first LED at the first end of the light bar and a last LED at the second end of the light bar emit the same color light.Type: GrantFiled: May 11, 2017Date of Patent: March 26, 2019Assignee: GLO ABInventors: Michael Jansen, Sheng-Min Wang
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Patent number: 10236447Abstract: A method of repairing a light emitting device assembly includes providing a light emitting device assembly including a backplane and light emitting devices, where a predominant subset of pixels in the light emitting device assembly includes an empty site for accommodating a repair light emitting device, generating a test map that identifies non-functional light emitting devices in the light emitting device assembly, providing an assembly of a repair head and repair light emitting devices, wherein the repair light emitting devices are located only on locations that are mirror images of empty sites within defective pixels that include non-functional light emitting devices, and transferring the repair light emitting devices from the repair head to the backplane in the empty site in the defective pixels.Type: GrantFiled: May 17, 2017Date of Patent: March 19, 2019Assignee: GLO ABInventors: Fariba Danesh, Frank Patterson, Timothy Gallagher, Sharon N. Farrens
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Patent number: 10229899Abstract: A laser liftoff process is provided. A device layer can be provided on a transfer substrate. Channels can be formed through the device layer such that devices comprising remaining portions of the device layer are laterally isolated from one another by the channels. The transfer substrate can be bonded to a target substrate through an adhesion layer. Surface portions of the devices can be removed from an interface region between the transfer substrate and the devices by irradiating a laser beam through the transfer substrate onto the devices. The laser irradiation decomposes the III-V compound semiconductor material. The channels provide escape paths for the gaseous products (such as nitrogen gas) that are generated by the laser irradiation. The transfer substrate is separated from a bonded assembly including the target substrate and remaining portions of the devices. The devices can include a III-V compound semiconductor material.Type: GrantFiled: March 1, 2018Date of Patent: March 12, 2019Assignee: GLO ABInventor: Daniel Bryce Thompson
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Patent number: 10217911Abstract: A set of light emitting devices can be formed on a substrate A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second hand gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.Type: GrantFiled: November 16, 2017Date of Patent: February 26, 2019Assignee: GLO ABInventors: Martin Schubert, Daniel Bryce Thompson, Michael Grundmann, Nathan Gardner
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Patent number: 10217917Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: GrantFiled: March 10, 2017Date of Patent: February 26, 2019Assignee: GLO ABInventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Jesper Hanberg
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Patent number: 10205054Abstract: A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane portions of the shell.Type: GrantFiled: January 3, 2018Date of Patent: February 12, 2019Assignee: GLO ABInventors: Linda Romano, Ping Wang
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Patent number: 10205075Abstract: A light emitting device and method of forming the same, the light emitting device including: a substrate, a buffer layer disposed on the substrate, a semiconductor mesa disposed on the buffer layer and including a first semiconductor layer, a light emitting active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the first semiconductor layer, a contact layer disposed on an upper surface of the mesa, a passivation layer covering sidewalls of the mesa and the contact layer, and a cap structure including a reflective layer covering an upper surface of the contact layer, and a solder layer including a recess in which the reflective layer is disposed.Type: GrantFiled: November 29, 2017Date of Patent: February 12, 2019Assignee: GLO ABInventors: Anusha Pokhriyal, Mariana Munteanu, Fariba Danesh
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Patent number: 10193038Abstract: Light emitting devices can be disposed on the front side of a transparent backplane. A laser beam can be irradiated through the transparent backplane and onto a component located on the front side of the transparent backplane. In one embodiment, the component may be a solder material portion that is reflowed to bond the light emitting devices to the transparent backplane. In another embodiment, the component may be a solder material bonded to a defective bonded light emitting device. In this case, the laser irradiation can reflow the solder material to dissociate the defective bonded light emitting device from the transparent backplane. In yet another embodiment, the component may be a device component that is electrically modified by the laser irradiation.Type: GrantFiled: March 20, 2017Date of Patent: January 29, 2019Assignee: GLO ABInventors: Sharon N. Farrens, Anusha Pokhriyal
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Patent number: 10185150Abstract: A light engine includes a housing containing a rectangular aperture, a polarizer disposed in the housing facing the aperture, a light emitting diode (LED) array disposed in the housing, and a light guide configured to guide light emitted from the LED array toward the aperture, such that light is emitted through the aperture.Type: GrantFiled: May 25, 2017Date of Patent: January 22, 2019Assignee: GLO ABInventors: Sheng-Min Wang, Hui-Yu Huang, Michael Jansen
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Patent number: 10177123Abstract: A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate.Type: GrantFiled: December 17, 2015Date of Patent: January 8, 2019Assignee: GLO ABInventors: Nathan Gardner, Fredrick A. Kish, Jr., Miljenko Modric, Anusha Pokhriyal, Daniel Bryce Thompson, Fariba Danesh, Sharon N. Farrens
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Patent number: 10101518Abstract: A light emitting device includes a support having an interstice and at least one LED located in the interstice and at least one of a waveguide or an optical launch having a transparent material encapsulating the at least one LED located in the interstice.Type: GrantFiled: September 22, 2014Date of Patent: October 16, 2018Assignee: GLO ABInventors: Ping Wang, Douglas Harvey, Tyler Kakuda, Ronald Kaneshiro
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Patent number: 10079331Abstract: Various embodiments include semiconductor devices, such as nanowire LEDs, that include a plurality of first conductivity type semiconductor nanowire cores located over a support, a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, and a layer of a high index of refraction material over at least a portion of a surface of at least one of the nanowire cores and the shells, wherein the high index of refraction material has an index of refraction that is between about 1.4 and about 4.5. Light extraction efficiency may be improved.Type: GrantFiled: March 12, 2014Date of Patent: September 18, 2018Assignee: GLO ABInventors: Scott Brad Herner, Xiaoming Ji
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Patent number: 10038115Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.Type: GrantFiled: June 27, 2017Date of Patent: July 31, 2018Assignee: GLO ABInventors: Carl Patrik Theodor Svensson, Nathan Gardner
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Patent number: 10026866Abstract: A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell. The active region quantum well shell has a non-uniform surface profile having at least 3 peaks. Each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley, and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.Type: GrantFiled: August 14, 2017Date of Patent: July 17, 2018Assignee: GLO ABInventors: Linda Romano, Sungsoo Yi, Patrik Svensson, Nathan Gardner
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Patent number: 9978808Abstract: A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.Type: GrantFiled: May 3, 2017Date of Patent: May 22, 2018Assignee: GLO ABInventors: Richard P. Schneider, Jr., Benjamin Leung
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Patent number: 9972750Abstract: Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200° C. or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.Type: GrantFiled: December 10, 2014Date of Patent: May 15, 2018Assignee: GLO ABInventors: Scott Brad Herner, Daniel Bryce Thompson
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Patent number: 9947829Abstract: The present invention provides a substrate (1) with a bulk layer (3) and a buffer layer (4) having a thickness of less than 2 ?m arranged on the bulk layer (3) for growth of a multitude of nanowires (2) oriented in the same direction on a surface (5) of the buffer layer (4). A nanowire structure, a nanowire light emitting diode comprising the substrate (1) and a production method for fabricating the nanowire structure is also provided. The production method utilizes non-epitaxial methods for forming the buffer layer (4).Type: GrantFiled: June 27, 2011Date of Patent: April 17, 2018Assignee: GLO ABInventor: Jonas Ohlsson
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Patent number: 9941262Abstract: A laser liftoff process is provided. A device layer can be provided on a transfer substrate. Channels can be formed through the device layer such that devices comprising remaining portions of the device layer are laterally isolated from one another by the channels. The transfer substrate can be bonded to a target substrate through an adhesion layer. Surface portions of the devices can be removed from an interface region between the transfer substrate and the devices by irradiating a laser beam through the transfer substrate onto the devices. The laser irradiation decomposes the III-V compound semiconductor material. The channels provide escape paths for the gaseous products (such as nitrogen gas) that are generated by the laser irradiation. The transfer substrate is separated from a bonded assembly including the target substrate and remaining portions of the devices. The devices can include a III-V compound semiconductor material.Type: GrantFiled: October 31, 2016Date of Patent: April 10, 2018Assignee: GLO ABInventor: Daniel Bryce Thompson
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Patent number: 9917232Abstract: A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap.Type: GrantFiled: February 27, 2017Date of Patent: March 13, 2018Assignee: GLO ABInventors: Martin Schubert, Daniel Bryce Thompson, Michael Grundmann, Nathan Gardner