Abstract: A technique of operating a data processing system, includes logging addresses for cache lines modified by a producer core in a data array of a producer cache to create a high-availability (HA) log for the producer core. The technique also includes moving the HA log directly from the producer cache to a consumer cache of a consumer core and moving HA data associated with the addresses of the HA log directly from the producer cache to the consumer cache. The HA log corresponds to a cache line that includes multiple of the addresses. Finally, the technique includes processing, by the consumer core, the HA log and the HA data for the data processing system.

Abstract: Methods and arrangements for parallelizing turbo encoding computations. At least one processor is provided. Turbo encoding computations are split into first and second parts. Using at least one processor, the computations of the first part are performed. Thereafter, using the at least one processor, the computations of the second part are performed, the second part correcting output provided by the computations of the first part. One of the first and second parts comprises computations performed in parallel and the other of the first and second parts comprises computations performed not in parallel. Other variants and embodiments are broadly contemplated herein.

Abstract: An exemplary structure for testing an integrated circuit includes a semiconductor substrate and first and second via chains disposed over the substrate. The via chains include a substantially same sequence of segments interconnected at N via regions by a respective first and second via arrangement. The first via arrangement includes MN first vias at each respective via region and the second via arrangement includes MN+KN second vias at each respective via region. The first via arrangement is different than the second via arrangement and KN?1 for at least one via region. The structure includes a voltage sensing apparatus in electrical connection with each via chain and configured to drive a first constant current through the first via chain and to drive a second constant current through the second via chain to measure a differential voltage between the via chains.

Abstract: A primary storage controller receives an input/output (I/O) command from a host, wherein a host timestamp is associated with the I/O command. During a mirroring of storage volumes to a secondary storage controller, the primary storage controller communicates the host timestamp associated with the I/O command to the secondary storage controller, wherein mirrored copies of the storage volumes are timestamped based on at least the host timestamp and an elapsed time since a last host I/O command. A recovery is made from a failure of one or more of the storage volumes in the primary storage controller, by using the timestamped mirrored copies of the storage volumes.

Abstract: A structure includes a tensilely strained NFET region including a strained silicon layer of a silicon on insulator wafer. A relaxed NFET region includes one of an ion implanted silicon and an ion implanted silicon dioxide interface layer of a tensilely strained silicon layer of the silicon on insulator wafer. A compressively strained PFET region includes a SiGe layer which was converted from a tensilely strained silicon layer of the silicon on insulator wafer. A relaxed PFET region includes one of an ion implanted silicon and an ion implanted silicon dioxide interface layer of a tensilely strained silicon layer of the silicon on insulator wafer.

Abstract: When forming sophisticated semiconductor-based gate electrode structures of transistors, the pre-doping of one type of gate electrode structure may be accomplished after the actual patterning of the electrode material by using an appropriate mask or fill material for covering the active regions and using a lithography mask. In this manner, a high degree of flexibility is provided with respect to selecting an appropriate patterning regime, while at the same time a uniform and superior cross-sectional shape for any type of gate electrode structure is obtained.

Abstract: A first data access request to a first row of a first memory array of the DRAM is received while a refresh operation in the first memory array is executing. The refresh operation is paused. The first data access request is executed, and simultaneously, the bits of the first row of the first memory array, including any updates indicated in the first data access request, are latched to a transfer register. The bits latched to the transfer register are written to a corresponding first row in a second memory array of the DRAM. A bank select logic is updated to indicate that subsequent data access requests to the first row in the first memory array will be executed from the second memory array. The refresh operation is then resumed.

Abstract: Disclosed are single-ended sensing circuits. Each of the sensing circuits comprises at least a sense amplifier connected to a sense node, an isolation field effect transistor (FET) connected in series between the sense node and a signal line node, and a pre-charged device connected to the sense node. In order to achieve a relatively fast pre-charge of both the sense and signal line nodes and to also achieve a relatively fast and accurate sense of the sense node, the single-ended circuits further incorporate a variable reference voltage generator connected to the gate of the isolation FET for selectively applying different reference voltages to the gate during pre-charging and sensing operations, respectively, and/or a second pre-charge device connected to the signal line node for facilitating pre-charging of that signal line node.

Abstract: Protecting non-planar output transistors from electrostatic discharge (ESD) events includes providing a non-planar semiconductor structure, the structure including a semiconductor substrate with a well of n-type or p-type. The provided non-planar structure further includes raised semiconductor structure(s) coupled to the substrate, non-planar transistor(s) of a type opposite the well, each transistor being situated on one of the raised structure(s), the non-planar transistor(s) each including a source, a drain and a gate, the non-planar structure further including parasitic bipolar junction transistor(s) (BJT(s)) on the raised structure(s), each BJT including a collector and an emitter situated on the raised structure and a base being the well, and a well contact for the base of the BJT.

Abstract: A semiconductor structure including a semiconductor wafer. The semiconductor wafer includes a gate structure, a first trench in the semiconductor wafer adjacent to a first side of the gate structure and a second trench adjacent to a second side of the gate structure, the first and second trenches filled with a doped epitaxial silicon to form a source in the filled first trench and a drain in the filled second trench such that each of the source and drain are recessed and have an inverted facet. In a preferred exemplary embodiment, the epitaxial silicon is doped with boron.

Abstract: There is set forth herein a field effect transistor (FET) configured as an ESD protection device. In one embodiment, the FET can be configured to operate in a snapback operating mode. The FET can include a semiconductor substrate, a gate formed on the substrate and a dummy gate formed on the substrate spaced apart from the gate.

Abstract: A metallization scheme employing a first refractory metal barrier layer, a Group IIIA element layer, a second refractory metal barrier layer, and an oxidation-resistant metallic layer is employed to form a source region and a drain region that provide electrical contacts to a compound semiconductor material layer. The first and second refractory metal barrier layer are free of nitrogen, and thus, do not introduce additional nitrogen into the compound semiconductor layer, while allowing diffusion of the Group IIIA element to form locally doped regions underneath the source region and the drain region. Ohmic contacts may be formed at a temperature as low as about 500° C. This enables fabrication of FET whose source and drain are self-aligned to the gate.

Abstract: The present disclosure generally provides for an integrated circuit (IC) structure with a bulk silicon finFET and methods of forming the same. An IC structure according to the present disclosure can include: a bulk substrate; a finFET located on a first region of the bulk substrate; and a layered dummy structure located on a second region of the bulk substrate, wherein the layered dummy structure includes a first crystalline semiconductive layer, a second crystalline semiconductive layer positioned on the first crystalline semiconductive layer, wherein the first crystalline semiconductive layer comprises a material distinct from the second crystalline semiconductive layer, and a third crystalline semiconductive layer positioned on the second crystalline semiconductive layer, wherein the third crystalline semiconductive layer comprises the material distinct from the second crystalline semiconductive layer.

Abstract: Methods are presented for facilitating fabricating stacked nanowire, field-effect transistors. The methods include: forming a cut mask spacer on a gate structure disposed above multiple layers above a substrate structure, the gate structure including a sidewall spacer along its sidewalls, and the cut mask spacer overlying the sidewall spacer; defining a stack structure by cutting through the multiple layers using the cut mask spacer and gate structure as a mask, and selectively etching at least one layer of the multiple layers to undercut, in part, the mask, where at least one other layer of the multiple layers remains un-etched by the selectively etching; and providing an alignment mask spacer over the gate structure and over end surfaces of the multiple layers below the gate structure, the alignment mask spacer facilitating etching the other layer(s) of the multiple layers to selectively expose, in part, end surfaces of the other layer(s).

Abstract: Methods of forming a Co cap on a Cu interconnect in or through an ULK ILD with improved selectivity while protecting an ULK ILD surface are provided. Embodiments include providing a Cu filled via in an ULK ILD; depositing a Co precursor and H2 over the Cu-filled via and the ULK ILD, the Co precursor and H2 forming a Co cap over the Cu-filled via; depositing an UV cured methyl over the Co cap and the ULK ILD; performing an NH3 plasma treatment after depositing the UV cured methyl; and repeating the steps of depositing a Co precursor through performing an NH3 plasma treatment to remove impurities from the Co cap.

Abstract: A method for reducing areas of high field density in an integrated circuit is disclosed. In one embodiment, the method includes forming a first curvilinear wiring structure in a first interconnect layer of an integrated circuit. A second curvilinear wiring structure may be formed in a second interconnect layer of the integrated circuit, such that the first and second curvilinear wiring structures are substantially vertically aligned. The first curvilinear wiring structure may then be electrically connected to the second curvilinear wiring structure. A corresponding apparatus and design structure are also described.

Abstract: A pixel circuit for an active matrix organic light-emitting diode display system includes a first input node, a second input node, first power supply node, a second power supply node, a triode switch circuit, a storage capacitor, an organic light emitting diode, and a resistive element. The triode switch circuit is connected to the first and second input nodes. The storage capacitor is connected between an output of the triode switch circuit and the second power supply node. The organic light-emitting diode is connected between the output of the triode switch circuit and the second power supply node. The first resistive element is connected between the output of the triode switch circuit and the first power supply node.

Abstract: A semiconductor device includes a substrate and a gate stack disposed on the substrate. An upper layer of the gate stack is a metal gate conductor and a lower layer of the gate stack is a gate dielectric. A gate contact is in direct contact with the metal gate conductor.

Abstract: A substrate including a handle substrate, a lower insulator layer, a buried semiconductor layer, an upper insulator layer, and a top semiconductor layer is provided. Semiconductor fins can be formed by patterning a portion of the buried semiconductor layer after removal of the upper insulator layer and the top semiconductor layer in a fin region, while a planar device region is protected by an etch mask. A disposable fill material portion is formed in the fin region, and a shallow trench isolation structure can be formed in the planar device region. The disposable fill material portion is removed, and gate stacks for a planar field effect transistor and a fin field effect transistor can be simultaneously formed. Alternately, disposable gate structures and a planarization dielectric layer can be formed, and replacement gate stacks can be subsequently formed.

Abstract: A method of determining a dose-to-clear of a photoresist on a wafer includes providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed, transforming the image of the wafer into frequency spectrum data, calculating an average frequency spectrum component of the frequency spectrum data, calculating a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum, and determining a dose-to-clear of the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.