Abstract: A working object grinding method capable of grinding a working object reliably is provided. A working object 1 is irradiated with a laser beam while locating a converging point therewithin, so as to form a reformed region 7 in the working object 1 along a reformed-region forming line set at a predetermined distance inside from an outer edge of the working object 1 along the outer edge, and a rear face 21 of the working object 1 is ground. As a result, the reformed region 7 or fissures C1 extending therefrom can inhibit fissures generated in an outer edge portion 25 upon grinding the working object 1 from advancing to the inside, whereby the working object 1 can be prevented from fracturing.

Abstract: A spectroscopic measurement apparatus comprises an integrating sphere in which a sample is located, an irradiation light supplying section supplying excitation light via an entrance aperture to the interior of the integrating sphere, a sample container holding the sample in the interior of the integrating sphere, a spectroscopic analyzer dispersing the light to be measured from an exit aperture and obtaining a wavelength spectrum, and a data analyzer performing data analysis of the wavelength spectrum. The analyzer includes a correction data obtaining section which obtains correction data of the wavelength spectrum considering light absorption by the sample container, and a sample information analyzing section which corrects and analyzes the wavelength spectrum to obtain sample information.

Abstract: In an aberration-correcting method according to an embodiment of the present invention, in an aberration-correcting method for a laser irradiation device 1 which focuses a laser beam on the inside of a transparent medium 60, aberration of a laser beam is corrected so that a focal point of the laser beam is positioned within a range of aberration occurring inside the medium. This aberration range is not less than n×d and not more than n×d+?s from an incidence plane of the medium 60, provided that the refractive index of the medium 60 is defined as n, a depth from an incidence plane of the medium 60 to the focus of the lens 50 is defined as d, and aberration caused by the medium 60 is defined as ?s.

Abstract: The display area selection circuit selects a desired display area. The signal generating circuit sets a period of each shift signal generated while the selection position of the pixel diode is between the shift start position and the display start position shorter than a period of each shift signal generated while the selection position of the pixel diode is between the display start position and the display end position.

Abstract: A signal charge collecting region is disposed inside a charge generating region so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. An unnecessary charge collecting region is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A transfer electrode is disposed between the signal charge collecting region and the charge generating region, and causes the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal. An unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the unnecessary charge collecting region in response to an input signal.

Abstract: After a glass layer 3 is disposed between a glass member 4 and a thermal conductor 7 along a region to be fused, a laser beam L1 is emitted while the thermal conductor 7 is used as a heat sink, so as to melt the glass layer 3, thereby burning and fixing the glass layer 3 onto the glass member 4. While the glass layer 3 drastically increases its laser absorptance at the time of burning, the thermal conductor 7 serves as the heatsink and draws heat from the glass layer 3, thereby inhibiting the glass layer 3 from falling into an excessive heat input state. Thereafter, another glass member is overlaid on the glass member 4 having the glass layer 3 burned thereonto, such that the glass layer 3 is interposed therebetween. Then, the region to be fused is irradiated therealong with a laser beam, so as to fuse the glass members together.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: A solid-state imaging device according to one embodiment is a multi-port solid-state imaging device, and includes an imaging region and a plurality of units. The imaging region includes a plurality of pixel columns. The units generate signals based on charges from the imaging region. Each of the units has an output register, a plurality of multiplication registers, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns out of the plurality of pixel columns. The multiplication registers are provided in parallel, and receive the charge from the output register to generate multiplied charges individually. The amplifier generates a signal based on the multiplied charges from the multiplication registers.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: This light source 1 is provided with a luminescent cylinder 3A housing a luminescent part 2 to generate light; a light guide cylinder 3B connected to the luminescent cylinder 3A on a one end side, and configured to guide the light generated by the luminescent part 2, to an exit window 4 provided on the other end side; and a cylindrical reflective cylinder 9 inserted and fixed between the exit window 4 of the light guide cylinder 3B and a portion connecting the luminescent cylinder 3A and the exit window 4, and having an inner wall surface as a reflective surface 9a to reflect the light.

Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer having a cascade structure formed by multistage-laminating unit laminate structures each including an emission layer and an injection layer. Further, the unit laminate structure 16 includes a first emission upper level, a second emission upper level, and a plurality of emission lower levels, one of the first and second upper levels is a level arising from a ground level in the first well layer, and the other is a level arising from an excitation level in the well layer except for the first well layer. Further, the energy interval between the first upper level and the second upper level is set smaller than the energy of an LO phonon, and the energy interval between the second upper level and a higher energy level is set larger than the energy of an LO phonon.

Abstract: In the laser processing method, the cross-sectional form of laser light L at a converging point P is such that the maximum length in a direction perpendicular to a line to cut 5 is shorter than the maximum length in a direction parallel to the line to cut 5. Therefore, when seen from the incident direction of the laser light L, a modified region 7 formed within a silicon wafer 11 has such a shape that the maximum length in the direction perpendicular to the line to cut 5 is shorter than the maximum length in the direction parallel to the line to cut 5. Forming the modified region 7 having such a shape within the object 1 can restrain twist hackles from occurring on cut surfaces when cutting the object 1 from the modified region 7 acting as a cutting start point, thereby making it possible to improve the flatness of the cut surfaces.

Abstract: In the integrated PET/MRI scanner provided with an RF coil for MRI and a plurality of PET detectors in the measuring port of the MRI scanner, the PET detectors are disposed with spaces therebetween and at least the transmitting coil elements of the RF coil for MRI are disposed between adjacent PET detectors. Here, the PET detectors are disposed in the circumferential direction of the measuring port with spaces therebetween and the transmitting coil elements are disposed in the axial direction of the measuring port. Alternatively, at least some of the PET detectors are disposed in the axial direction of the measuring port with spaces therebetween and the transmitting coil elements are disposed between adjacent PET detectors. The PET detectors can be DOI-type detectors capable of detecting position in the depth direction.

Abstract: A structural color body is film-like and comprises a front surface layer disposed on a front surface side and a back surface layer disposed on a back surface side, the front surface layer and the back surface layer contain block copolymers and have micro-phase separated structures including lamellar micro domains, each of the micro domains has a wave-like shape having amplitudes in the thickness direction of the structural color body, a maximum value of distances predetermined in the micro domains of the front surface layer is larger than the wavelength in the visible light range, and distances predetermined in the micro domains of the back surface layer are equal to or less than the wavelength in the visible light range.

Abstract: An MCP has a rectangular plate shape and has a porous part, to which a plurality of pores (channels) penetrating in the thickness direction are disposed, and a poreless part including a solid glass or the like to which the channels are not provided on the both sides of the porous part. Then, on both surfaces of the MCP, an input side electrode and an output side electrode are respectively formed so as to cover the poreless parts on the both surfaces while sandwiching the porous part.

Abstract: A method of manufacturing microchannel plate according to an embodiment of the present invention includes: a first step of fabricating a multifiber having a polygonal cross-section by bundling a plurality of fibers; a second step of fabricating a microchannel plate base material by use of a plurality of the multifibers; and a third step of fabricating a microchannel plate out of the microchannel plate base material. The plurality of fibers include: a first fiber whose predetermined-thickness outer circumferential part surrounding a center part including a core is formed of a predetermined-component glass material; and a second fiber whose both center part including a core and outer circumferential part surrounding the same are formed of the predetermined-component glass material. The second fiber is arranged at, at least, one corner of a polygonal cross-section of the multifiber.

Abstract: A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels 11 having respective photodiodes, the pixels being two-dimensionally arrayed in M rows and N columns; N readout lines disposed for the respective columns and connected with the photodiodes PD included in the pixels of a respective columns via readout switches; a signal output section for outputting a voltage value according to an amount of charge input through each of the readout lines; and a vertical shift register for controlling an opening and closing operation of the readout switch for each of the rows. A contour between one side along a row direction of the light receiving section and a pair of sides along a column direction has a stepped shape. A dummy photodiode region is formed along the stepped contour of the light receiving section.

Abstract: An ion detector 1A for detecting positive ions is provided with a chamber 2 having an ion entrance 3 which allows positive ions to enter, a conversion dynode 9 which is disposed in the chamber 2 and to which a negative potential is applied, and an avalanche photodiode 30 that is disposed in the chamber 2 and has an electron incident surface 30a which is opposed to the conversion dynode 9 and also into which secondary electrons emitted from the conversion dynode 9 are made incident. The electron incident surface 30a is located closer to the conversion dynode 9 than a positioning part 14 which supports the avalanche photodiode 30 in the grounded chamber 2.

Abstract: The drug evaluation device obtains, by an attenuated reflection method using a terahertz wave, an evaluation absorption spectrum for a frequency with respect to a liquid to be evaluated. When crystalline particles are suspended in a liquid, an absorption peak having a peak area corresponding to the amount of suspension appears in its absorption spectrum. Therefore, whether or not and by what ratio crystalline particles are suspended in the liquid can be determined according to whether or not the absorption peak exists and the peak area. When amorphous particles are suspended in the liquid, the baseline of its absorption spectrum lowers according to the ratio of amorphous particles suspended in the liquid. Therefore, whether or not and by what ratio amorphous particles are suspended in the liquid can be determined according to the lowering amount of the baseline.