Abstract: The solid-state imaging device 1 includes an imaging photodetecting section 10, a trigger photodetecting section 20, a row selection section 30, a column selection section 40, a holding section 50, a pixel data output section 60, a trigger data output section 70, and a control section 80. In a shutter method of the solid-state imaging device 1, the start of a charge accumulation period is common to all rows of the imaging photodetecting section 10, while the end of the charge accumulation period varies row by row of the imaging photodetecting section 10, and there is a signal readout period subsequent to the charge accumulation period in each row of the imaging photodetecting section 10. Accordingly, a solid-state imaging device that can perform high-accuracy imaging even when the incident period of light to be imaged is considerably short is realized.

Abstract: Provided is a radiation detector 1 capable of improving reliability while using a plurality of light receiving elements to provide a large screen size. A radiation detector 1 includes: a flexible supporting substrate 5 that includes a radiation incident surface 5a and a radiation emission surface 5b; a scintillator layer 6 made from a plurality of columnar crystals H formed on the emission surface 5b through crystal growth and generating light due to the incident radiation; a moisture-proof protective layer 7 covering the scintillator layer 6 and filled between the plurality of columnar crystals H; and light receiving elements 8A to 8D arranged to oppose the scintillator layer 6 and detecting the light generated in the scintillator layer 6.

Abstract: A processing information supply apparatus 10 is prepared for a laser processing apparatus for forming a modified region, which becomes a starting point of cutting, along a line to cut within an object to be processed by irradiating the object with laser light while locating a light-converging point within the object. The processing information supply apparatus 10 includes an object information input unit 12 for inputting processing object information on the object to be processed, a processing condition database 19 in which data on processing conditions corresponding to the processing object information is accumulated, a processing condition setting unit 16 for referring to the processing condition data in the database 19 and setting the processing condition for the object based on the processing object information, and a condition information output unit 13 for outputting processing condition information for the set processing condition.

Abstract: A laser light shaping and wavefront controlling optical system 1 in accordance with an embodiment of the present invention comprises an intensity conversion lens 24 for converting and shaping an intensity distribution of laser light incident thereon into a desirable intensity distribution; an optical modulation device 34 for modulating the laser light emitted from the intensity conversion lens 24 so as to control a wavefront thereof; a condenser optical system 36 for converging the laser light issued from the optical modulation device 34; and an image-forming optical system 30, arranged between the optical modulation device 34 and the condenser optical system 36, having an entrance-side imaging plane between a plane 24x where the laser light emitted from the intensity conversion lens 24 attains the desirable intensity distribution and a modulation plane 34a of the optical modulation device 34 and an exit-side imaging plane on a pupil plane 36a of the condenser optical system 36.

Abstract: A solid-state imaging device 2A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns and N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the plane 12 and for outputting electrical signals according to the magnitudes of charges taken out of the respective columns, respectively, a C-MOS-type semiconductor element 50 for digital-converting and sequentially outputting as serial signals electrical signals output from the circuits 20 for each of the columns, a heat transfer member 80 having a main surface 81a and a back surface 81b, and a cooling block 84 provided on the surface 81b, and the semiconductor element 50 and the surface 81a of the heat transfer member 80 are bonded to each other.

Abstract: An object to be processed is restrained from warping at the time of laser processing. A modified region M2 is formed within a wafer 11, and fractures a2, b2 extending in directions parallel to the thickness direction of the wafer 11 and tilted with respect to a plane including lines 5 are generated from the modified region M2. A modified region M3 is formed within the wafer 11, and a fracture a3 extending in a direction parallel to the thickness direction of the wafer 11 and tilted with respect to the plane including the lines 5 is generated from the modified region M3 so as to connect with the fracture b2. That is, the fractures a2, a3, b2 are generated so as to be connected together.

Abstract: An image generation device 1 comprises a laser light source 3, a laser output control unit 11, a laser scanner 5 for scanning an irradiation position of the laser light, a modulation pattern control unit 15 for controlling the laser output control unit 11 and laser scanner 5 so as to irradiate the object A with illumination light having a plurality of spatial modulation patterns, an imaging device 7 for capturing observation light brought from the object A in response to irradiation with the illumination light having the plurality of spatial modulation patterns so as to acquire a plurality of pattern images, and an image data operation unit 19 for generating a high-resolution image of the object A by using the plurality of pattern images acquired by the imaging device 7.

Abstract: Light irradiates one light incident position on the surface of a scattering-absorption body. The light that propagates through the interior of the scattering-absorption body is detected at one light detecting position on the surface of the scattering-absorption body. On the basis of a light detection signal, a temporal profile of the light intensity of the detected light is acquired, and on the basis of the temporal profile, an mean optical path length of the light in the interior of the scattering-absorption body and information relating to the amount of substance to be measured in a region to be measured are calculated. The information relating to the amount of substance to be measured is corrected on the basis of the mean optical path length, such that the longer the mean optical path length, the greater the amount of substance to be measured is.

Abstract: Provided is an observation device which can obtain a phase image of a moving object rapidly with high sensitivity even when using a photodetector having a slow read-out speed per pixel. The observation device 1 comprises a light source 10, a first modulator 20, a second modulator 30, a lens 40, a beam splitter 41, a photodetector 46, and an arithmetic unit 50. The lens 40 receives scattered light generated by a moving object 2 and forms a Fourier transform image of the object 2. The photodetector 46 outputs data representing a sum in a v direction of data temporally changing at a frequency corresponding to a Doppler shift frequency of the light having reached each position on a light-receiving surface through the lens 40 at each position in a u direction at each time. The arithmetic unit 50 obtains an image of the object 2 according to the output of the photodetector 46.

Abstract: A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels 11 having respective photodiodes, the pixels being two-dimensionally arrayed in M rows and N columns; N readout lines disposed for the respective columns and connected with the photodiodes PD included in the pixels of a respective columns via readout switches; a signal output section for outputting a voltage value according to an amount of charge input through each of the readout lines; and a vertical shift register for controlling an opening and closing operation of the readout switch for each of the rows. A contour between one side along a row direction of the light receiving section and a pair of sides along a column direction has a stepped shape. A dummy photodiode region is formed along the stepped contour of the light receiving section.

Abstract: The present invention relates to a photocathode having a structure to dramatically improve the effective quantum efficiency in comparison with that of a conventional art, an photomultiplier and an electron tube. The photocathode comprises a supporting substrate transmitting or blocking an incident light, a photoelectron emitting layer containing an alkali metal provided on the supporting substrate, and an underlayer provided between the supporting substrate and the photoelectron emitting layer. Particularly, the underlayer contains a beryllium oxide, and is adjusted in its thickness such that a thickness ratio of the underlayer to the photoelectron emitting layer falls within a specific range. This structure allows to obtain a photocathode having a dramatically improved quantum efficiency.

Abstract: The present invention relates to a microscopic image capturing apparatus having a structure that, in scanning an imageable area of an imaging unit in a predetermined direction in an imaging object area, in which a sample is present, can reliably set a focal point of the imaging unit on each imaging position set inside the imaging object area regardless of the type of focusing actuator. The microscopic image capturing apparatus has a sample setting stage having a sample setting surface that is inclined with respect to a scan plane orthogonal to an optical axis of an objective lens. By moving the sample setting stage along the scan plane such that the distance in the optical axis direction between the imaging unit and the sample setting surface varies monotonously, the focal point position of the imaging unit is adjusted in only one direction along the optical axis of the objective lens.

Abstract: A modified region 7 to become a starting point region for cutting is formed in a GaAs substrate 12 along a line to cut 5 upon radiation with laser light L which is pulsed laser light. As a consequence, the modified region 7 formed in the GaAs substrate 12 along the line to cut 5 is likely to generate fractures in the thickness direction of an object to be processed 1. Therefore, the modified region 7 having an extremely high function as a starting point region for cutting can be formed in the planar object to be processed 1 comprising the GaAs substrate 12.

Abstract: A suction unit 10 includes a main body portion having a first surface 13 on which a semiconductor wafer W is arranged and a second surface 14 opposite to the first surface 13, and in which a through-hole 15 that penetrates through the first surface 13 and the second surface 14 is formed and a light transmitting portion having a light incident surface 16 and a light emitting surface 17, and which is fitted to the through-hole 15. Further, in the first surface 13, a first suction groove 13a for vacuum sucking the semiconductor wafer W to fix the semiconductor device D to the light incident surface 16 is formed, and in the second surface 14, a second suction groove 14a for vacuum sucking the solid immersion lens S to fix the solid immersion lens S to the light emitting surface 17 is formed.

Abstract: A membrane potential change detection device 1 is provided with a reflection interference measurement light source 106, a holder 103 which holds a transparent member 102a on which cells 101 are mounted, a reflection interference detection camera 110 which images light emitted from the reflection interference measurement light source 106 and reflected from the cells 101 through the transparent member 102a, to generate a reflection interference image, and an analysis unit 202 which calculates a parameter dI about adhesion between the cells 101 and the transparent member 102a from the reflection interference image and detects a change of membrane potential of the cells 101 on the basis of a change of the parameter dI.

Abstract: A scintillator panel 1 and a radiation image sensor 10 which can achieve higher resolution and higher luminance are provided. The scintillator panel 1 comprises a radiation transmitting substrate 3, adapted to transmit a radiation therethrough, having entrance and exit surfaces 3a, 3b for the radiation; a scintillator 4, adapted to generate light in response to the radiation incident thereon, comprising a plurality of columnar bodies grown as crystals on the exit surface 3b; an FOP 6, arranged on an opposite side of the scintillator 4 from the exit surface 3b, for propagating the light generated by the scintillator 4; and a double-sided tape 5, disposed between the scintillator 4 and the FOP 6, for adhesively bonding the scintillator 4 and the FOP 6 together and transmitting therethrough the light generated by the scintillator 4.

Abstract: Integrated circuit layers to be stacked on top of each other are formed with a plurality of inspection rectifier device units, respectively. The inspection rectifier device units including rectifier devices are connected between a plurality of connection terminals and a positive power supply lead and a grounding lead and emit light in response to a current. After electrically connecting the plurality of connection terminals to each other, a bias voltage is applied between the positive power supply lead and the grounding lead, and the connection state between the connection terminals is inspected according to a light emission of the inspection rectifier device unit. This makes it possible to inspect, in a short time every time a layer is stacked, whether or not an interlayer connection failure exists in a semiconductor integrated circuit device constructed by stacking a plurality of integrated circuit layers in their thickness direction.

Abstract: An X-ray detector 1 includes: an X-ray conversion layer 17 which is made of amorphous selenium and absorbs incident radiation and generates charges; a common electrode 23 provided on a surface on the side on which radiation is made incident of the X-ray conversion layer 17; and a signal readout substrate 2 on which a plurality of pixel electrodes 7 for collecting charges generated by the X-ray conversion layer 17 are arrayed, and further includes: an electric field relaxation layer 13 provided between the X-ray conversion layer 17 and the signal readout substrate 2 and containing arsenic and lithium fluoride; a crystallization suppressing layer 11 provided between the electric field relaxation layer 13 and the signal readout substrate 2 and containing arsenic; and a first thermal property enhancement layer 15 provided between the electric field relaxation layer 13 and the X-ray conversion layer 17 and containing arsenic.

Abstract: A total reflection terahertz wave measuring apparatus 1 includes a light source 11, a branching part 12, a chopper 13, an optical path length difference adjusting part 14, a polarizer 15, a beam splitter 17, a terahertz wave generating element 20, a filter 25, an internal total reflection prism 31, a terahertz wave detecting element 40, a ¼ wavelength plate 51, a polarization split element 52, a photodetector 53a, a photodetector 53b, a differential amplifier 54, and a lock-in amplifier 55. The internal total reflection prism 31 is a so-called aplanatic prism, and has an entrance surface 31a, an exit surface 31b, and a reflection surface 31c. The terahertz wave generating element 20 and the filter 25 are provided to be integrated with the entrance surface 31a of the internal total reflection prism 31, and the terahertz wave detecting element 40 is provided to be integrated with the exit surface 31b of the internal total reflection prism 31.

Abstract: A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3, a plurality of first transferring portions 5, a plurality of charge accumulating portions 7, a plurality of second transferring portions 9, and a shift register 11. Each photoelectric converting portion 3 has a photosensitive region 13 which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 15 which forms a potential gradient increasing along a first direction directed from one short side to the other short side forming the planar shape of the photosensitive region 13. Bach first transferring portion 5 is arranged on the side of the other short side forming the planar shape of the corresponding photosensitive region 13 and transfers a charge acquired from the corresponding photosensitive region 13, in the first direction.