Abstract: In the present invention, a method for manufacturing a liquid crystal display is provided. The method includes steps of providing a substrate, forming a first metal layer on the substrate, etching the first metal layer to form a plurality of gate lines on the substrate, forming a common electrode on the substrate, forming a second metal layer on the substrate, etching the second metal layer to form a first electrode, a second electrode, a common line and a plurality of data lines on the substrate, and forming a pixel electrode overlapping the common electrode, wherein the gate lines intersect the data lines to form at least one enclosed area, the common electrode and the pixel electrode are positioned in the enclosed area, the first electrode is connected to the pixel electrode and the second electrode is connected to the data lines.

Abstract: A method of fabricating a liquid crystal display panel is provided, which comprises the steps of providing a substrate; forming a mask layer over the substrate, wherein the mask layer has a reverse-tapered opening exposing a predetermined conductive line area; depositing a metal layer on the substrate within the predetermined conductive line area to form a conductive line with a tapered sidewall by performing an anisotropic deposition process; and removing the mask.

Abstract: A direct type backlight unit includes a metal housing having a base, at least one metal supporting pin and a buffer element. The metal supporting pin is formed integrally on the base and protrudes upwardly therefrom for supporting an optical film disposed upon the backlight unit, and the buffer element is disposed between the metal supporting pin and the optical film so as to prevent the metal supporting pin from damaging the optical film.

Abstract: A reflective liquid crystal display panel for dual display. The panel has a plurality of pixels and each pixel having first and second display regions. Each pixel includes a first substrate and a second substrate opposite thereto, wherein the first substrate includes a pixel driving device. A first reflective layer is formed overlying the first substrate in the first display region. A second reflective layer is formed overlying an interior of the second substrate in the second display region. A liquid crystal layer is interposed between the first substrate and the second substrate.

Abstract: A thin film transistor (TFT) array substrate has a plurality of pixel units. A plurality of signal lines and a plurality of scanning lines are formed on the substrate. Each of the plurality of paired and adjacent signal lines and each of the plurality of scanning lines are arranged in a matrix form to define each pixel unit. Each pixel unit includes at least two pixels, which are abreast of the paired and adjacent signal lines. This structure thereby provides a TFT array substrate with high aperture ratio pixel structure.

Abstract: A cascading differential signal circuit. The processor outputs a differential signal. The data-bus transmits the differential signal. Each driving IC comprises a data receiving circuit, a terminal resistor, an output terminal and an analog-digital converter. The data receiving circuit is coupled to the data-bus for receiving the differential signals and encoding a digital signal. The terminal resistor is coupled to the data receiving circuit for acquiring an impedance match with the data-bus to transmit the differential signals. The output terminal is coupled to the terminal resistor for outputting the differential signals. The analog-digital converter is coupled to the data receiving circuit for converting the digital signal to an analog signal.

Abstract: A structure and a method for measuring the bonding resistance are provided. The structure for measuring a bonding resistance between a first object and a second object is provided, wherein the first object has a plurality of first pins and a reference pin, and the second object has a plurality of second pins corresponding to the plurality of first pins and the reference pin. The structure further includes a first circuit formed by electrically connecting the reference pin to the first pin adjacent to the reference pin in a first direction, and a second circuit formed by electrically connecting a second pin corresponding to the reference pin to the adjacent second pin in a second direction. By connecting the first and the second circuits in series, the value of the bonding resistance is easily measured.

Abstract: Backlight modules are provided. The backlight module includes a printed circuit board, a plurality of red light emitting diodes, a plurality of blue light emitting diodes, a plurality of green light emitting diodes and a plurality of white light emitting diodes. The plurality of red, blue, green and white light emitting diodes are disposed on the printed circuit board, defining a light emitting area. The plurality of white light emitting diodes is disposed at the periphery of the light emitting area. Wherein both the blue light emitting diodes include a blue light chip and the red light emitting diodes include a red light chip respectively, the green light emitting diodes include a larger green light chip or two equal sized green light chips to the blue and red light chips.

Abstract: A pixel electrode structure for a liquid crystal display with a high aperture ratio increases the aperture ratio and eliminates Mura phenomenon. Any two adjacent pixel electrodes are disconnected to each other. Each pixel electrode comprises a first-lengthwise periphery that overlaps a first-adjacent data line to form a first overlapping portion, and a second-lengthwise periphery that overlaps a second-adjacent data line to form a second overlapping portion. The first-lengthwise periphery and the second-lengthwise periphery have an identical triangle-wave profile and are symmetrical to each other. The triangle-wave profile is formed by connecting a plurality of right-angled and equilateral triangles.

Abstract: A structure and a method for measuring the bonding resistance are provided. The structure for measuring a bonding resistance between a first object and a second object is provided, wherein the first object has a plurality of first pins and a reference pin, and the second object has a plurality of second pins corresponding to the plurality of first pins and the reference pin. The structure further includes a first circuit formed by electrically connecting the reference pin to the first pin adjacent to the reference pin in a first direction, and a second circuit formed by electrically connecting a second pin corresponding to the reference pin to the adjacent second pin in a second direction. By connecting the first and the second circuits in series, the value of the bonding resistance is easily measured.

Abstract: A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.

Abstract: A process for repairing defects applied in producing a liquid crystal display, wherein the liquid crystal display includes a pixel array formed by a plurality of scanning lines crossing with a plurality of data lines. The process includes steps of providing an essential repair line located on one side of the pixel array, welding a first intersection point of a defecting data line and the essential repair line and a second intersection point of a normal data line adjacent to the defecting data line and the essential repair line by a first laser to achieve electrical connection, and cutting a first breaking point and a second breaking point of the essential repair line by a second laser to achieve a broken circuit, wherein the first and second intersection points are located two sides of a line segment constructed by the first and second intersection points respectively.

Abstract: A process for repairing defects applied in producing a liquid crystal display, wherein the liquid crystal display includes a pixel array formed by a plurality of scanning lines crossing with a plurality of data lines. The process includes steps of providing an essential repair line located on one side of the pixel array, welding a first intersection point of a defecting data line and the essential repair line and a second intersection point of a normal data line adjacent to the defecting data line and the essential repair line by a first laser to achieve electrical connection, and cutting a first breaking point and a second breaking point of the essential repair line by a second laser to achieve a broken circuit, wherein the first and second intersection points are located two sides of a line segment constructed by the first and second intersection points respectively.

Abstract: A structure and a method for measuring the bonding resistance are provided. The structure for measuring a bonding resistance between a first object and a second object is provided, wherein the first object has a plurality of first pins and a reference pin, and the second object has a plurality of second pins corresponding to the plurality of first pins and the reference pin. The structure further includes a first circuit formed by electrically connecting the reference pin to the first pin adjacent to the reference pin in a first direction, and a second circuit formed by electrically connecting a second pin corresponding to the reference pin to the adjacent second pin in a second direction. By connecting the first and the second circuits in series, the value of the bonding resistance is easily measured.

Abstract: The present invention discloses a liquid crystal display with a narrow frame area. The liquid crystal display comprises a first substrate, plural scan line metal layers and plural data line metal layers formed on the first substrate, a second substrate attached to the first substrate by applying a seal at a periphery of one of the first substrate and the second substrate, and an opaque layer formed on the second substrate at the inside of the seal. In which, the scan line metal layers and the data line metal layers extend to the outside of the seal, and overlap with each other to form an integrated black matrix on the first substrate, which overlaps with the opaque layer on the second substrate so as to prevent a light leakage in an overlapped area thereof and narrow down the frame area.

Abstract: A liquid crystal display device includes a housing, a backlight module, a liquid crystal panel and a frame. The frame is coupled to the housing thereby assembling the liquid crystal panel and the backlight module into the liquid crystal display device. There is a fastening structure for coupling the frame to the housing. The fastening structure includes an engaging portion provided on the housing and two protrusion portions defined by a L-shaped aperture provided on the frame, wherein the engaging portion is provided at a position corresponding to the L-shaped aperture. The two protrusion portions of the frame are respectively inserted into recesses of the engaging portion of the housing and abut against the engaging portion.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Abstract: A manufacturing method for an in-plane switching mode liquid crystal display (LCD) unit is provided. The method includes steps of: providing a substrate, forming a first conductive layer on the substrate, patterning the first conductive layer to form a gate line, a comb-shaped first electrode, a wiring pad, and a comb-shaped second electrode by a first photo etching process, forming a first insulation layer and a first semi-conductive layer, patterning the first insulation layer and the first semi-conductive layer to form a channel, an insulation structure, a dielectric layer, and plural crossed-conductive line insulation structures by a second photo etching process, forming a second semi-conductive layer and a second conductive layer on the substrate, patterning the second semi-conductive layer and the second conductive layer to form a source/drain electrode, a data line, a connecting electrode, and a first electrode by a third photo etching process, and forming a passivation layer.

Abstract: Methods for manufacturing the glass substrate and for manufacturing the thin film transistor with lower glass sag are provided. The glass sag can be reduced by depositing a dielectric layer on the upper surface or the lower surface of the glass substrate and adjusting the stress applied thereon. This technology can be integrated not only into the manufacturing process for glass substrates but into that for thin film transistors.