Abstract: A spring contact for a sliding contact is provided having a terminal region and at least one contact region including an elongated spring element and a precious metal. The spring contact includes a conductive spring support and at least one contact piece. The spring support has essentially symmetrical rigidity in some regions in a plane perpendicular to the elongated extension of the spring support, and is made of a conductive material essentially free of precious metal. The contact piece(s) is/are conductively connected to the spring support, and has at least one surface to form the sliding contact. A surface of the contact piece(s) is made of a precious metal or a precious metal alloy. A slip ring transmitter for a motor or dynamo is also provided having a spring contact of this type, wherein the surface of the contact piece(s) touch(es) against the slip ring(s) in a conductive manner.

Abstract: A doped 4N copper wire for bonding in microelectronics contains one or more corrosion resistance dopant materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance dopant materials is between about 10 wt. ppm and about 80 wt. ppm.

Abstract: An alloyed 2N copper wire for bonding in microelectronics contains 2N copper and one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %.

Abstract: A secondary alloyed 1N copper wire for bonding in microelectronics contains one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.09 wt % and about 9.9 wt %.

Abstract: A 3N copper wire with trace additions for bonding in microelectronics contains 3N copper and one or more corrosion resistance addition materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance addition materials is between about 90 wt. ppm and about 980 wt. ppm.

Abstract: A connecting wire having an electrically conductive core, preferably provided by a wire or ribbon, with a coating provided on the surface of the core. The coating is composed of a nitrogen-containing tantalum alloy or tungsten alloy, and also optionally contains silicon as an additional alloy component. A manufacturing method for producing such a connecting wire involves passing a wire or ribbon core past a coating source to apply the coating.

Abstract: A bonding wire for semiconductor devices and a method of manufacturing the wire are provided. The bonding wire contains at least one element selected from zinc, tin, and nickel in an amount of 5 ppm to 10 wt %, the remainder containing silver and inevitable impurities. The method involves pouring a silver alloy according to the invention into a mold and melting the silver alloy, continuously casting the melted silver alloy, and drawing the continuously casted silver alloy.

Abstract: The present invention relates to a medical device or implant made at least in part of a high strength, low modulus metal alloy comprising Niobium, Tantalum, and at least one element selected from the group consisting of Zirconium, Tungsten, and Molybdenum. The medical devices according to the present invention provide superior characteristics with regard to bio-compatibility, radio-opacity and MRI compatibility.

Abstract: A paste may be used to connect at least one electronic component to at least one substrate through contact regions, wherein at least one of the contact regions contains a non-noble metal. The paste contains (a) metal particles, (b) at least one activator that bears at least two carboxylic acid units in the molecule, and (c) a dispersion medium. A method for connecting at least one electronic component to at least one substrate through the contact regions includes steps of providing a substrate having a first contact region and an electronic component having a second contact region; providing the above paste; generating a structure, wherein the first contact region of the substrate contacts the second contact region of the electronic component through the paste; and sintering the structure while producing a module including at least the substrate and the electronic component connected to each other through the sintered paste.

Abstract: A metal fiber based on one or several elements from the group of platinum, palladium, rhodium, ruthenium, and iridium with 0 to 30% by weight of one or several additional alloy elements from the group of nickel, cobalt, gold, rhenium, molybdenum, and tungsten, contains 1 to 500 ppm by weight of boron or phosphorus. A non-woven material or netting, in particular for the production of nitrogen oxide or for the production of hydrocyanic acid, is made of such fibers. For the production of fibers based on noble metals having up to 30% by weight of additional alloy metals by drawing the fibers from a melt, the melting point of the metal is reduced by at least 400° C., before drawing of the fibers, by additionally alloying with boron or phosphorus, and the boron or the phosphorus is removed again from the fibers.

Abstract: A method is provided for manufacturing a partially coated carrier structure including a carrier tape coated by a coating. A protective film is applied to at least a portion of the coating, the coating is partially removed from the carrier tape, and the protective film is removed from the coating. A device for manufacturing a partially coated carrier structure by a method of this type includes a first conveying facility for conveying a carrier tape coated by a coating, an application facility for application of a protective film to at least a portion of the coating, and at least one tool that can be used to partially remove the coating from the carrier tape.

Abstract: A metal fiber based on one or several elements from the group of platinum, palladium, rhodium, ruthenium, and iridium with 0 to 30% by weight of one or several additional alloy elements from the group of nickel, cobalt, gold, rhenium, molybdenum, and tungsten, contains 1 to 500 ppm by weight of boron or phosphorus. A non-woven material or netting, in particular for the production of nitrogen oxide or for the production of hydrocyanic acid, is made of such fibers. For the production of fibers based on noble metals having up to 30% by weight of additional alloy metals by drawing the fibers from a melt, the melting point of the metal is reduced by at least 400 ° C., before drawing of the fibers, by additionally alloying with boron or phosphorus, and the boron or the phosphorus is removed again from the fibers.

Abstract: A metal fiber based on one or several elements from the group of platinum, palladium, rhodium, ruthenium, and iridium with 0 to 30% by weight of one or several additional alloy elements from the group of nickel, cobalt, gold, rhenium, molybdenum, and tungsten, contains 1 to 500 ppm by weight of boron or phosphorus. A non-woven material or netting, in particular for the production of nitrogen oxide or for the production of hydrocyanic acid, is made of such fibers. For the production of fibers based on noble metals having up to 30% by weight of additional alloy metals by drawing the fibers from a melt, the melting point of the metal is reduced by at least 400° C., before drawing of the fibers, by additionally alloying with boron or phosphorus, and the boron or the phosphorus is removed again from the fibers.

Abstract: A process for providing a niobium wire and its use for connection to niobium or niobium oxide capacitors. The wire is enriched with oxygen and preferably has oxygen concentrations of about 3,000 to 30,000 ?g/g.

Abstract: A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

Abstract: A solid body of a metal alloy comprising less than 99% by weight of noble metal and more than 1% by weight of dispersion-strengthening metals is converted for production of a dispersion-strengthened platinum material by at least 90% oxidation of the dispersion-strengthening metals into a dispersion-strengthened platinum material. The dispersion-strengthened platinum material contains a noble metal component of platinum or a platinum alloy amounting to between 95 and 99% by weight and a dispersion-strengthening agent. The noble metal component includes at least 55% by weight Pt, 0 to 30% by weight Rh, 0 to 30% by weight Au, and 0 to 40% by weight Pd. The remaining proportion by mass of more than 1% by weight is a dispersion-strengthening agent, which contains at least one metal oxidized at least 90% by weight with oxygen, the metal being selected from the group of Ce, Zr, Sc, and Y.

Abstract: A sintering method is provided which allows components to be joined to each other in a stable way, wherein the processing temperature is less than 200° C. and stable contact points are produced, which have low porosity and also high electrical and thermal conductivity. The method for joining components includes (a) providing a sandwich arrangement having at least (a1) one component 1, (a2) one component 2, and (a3) a metal paste located between component 1 and component 2, and (b) sintering the sandwich arrangement. The metal paste contains (A) 75-90 weight percent of at least one metal present in the form of particles having a coating containing at least one organic compound, (B) 0-12 weight percent of at least one metal precursor, (C) 6-20 weight percent of at least one solvent, and (D) 0.1-15 weight percent of at least one sintering agent selected from the group comprising (i) organic peroxides, (ii) inorganic peroxides, and (iii) inorganic acids.

Abstract: A sintering method allows components to be joined to each other in a stable way at a processing temperature of less than 200° C., producing stable contact points having low porosity and high electrical and thermal conductivity. The method includes (a) providing a sandwich arrangement having at least a first component, a second component, and a metal paste located between the first and second components, and (b) sintering the sandwich arrangement. The metal paste includes (A) 75-90 wt. % of at least one metal present in the form of particles having an organic compound-containing coating, (B) 0-12 wt % of at least one metal precursor, (C) 6-20 wt % of at least one solvent, and (D) 0.1-15 wt % of at least one sintering agent selected from (i) salts of C1-C4 organic acids, (ii) esters of C1-C4 organic acids, and (iii) carbonyl complexes.

Abstract: A TFT structure is provided in which an oxidic semiconductor is used in combination with an electrode material based on a Cu alloy.

Abstract: An optoelectronic component including a connection carrier including an electrically insulating film at a top side of the connection carrier, an optoelectronic semiconductor chip at the top side of the connection carrier, a cutout in the electrically insulating film which encloses the optoelectronic semiconductor chip, and a potting body surrounding the optoelectronic semiconductor chip, wherein a bottom area of the cutout is formed at least regionally by the electrically insulating film, the potting body extends at least regionally as far as an outer edge of the cutout facing the optoelectronic semiconductor chip, and the cutout is at least regionally free of the potting body.