Patents Assigned to Hermes-Epitek Corp.
  • Publication number: 20120231569
    Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.
    Type: Application
    Filed: May 17, 2012
    Publication date: September 13, 2012
    Applicant: HERMES-EPITEK CORP.
    Inventors: BENSON CHAO, CHUNG-HUA FU, SHIH-CHIEH JANG
  • Publication number: 20110186810
    Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.
    Type: Application
    Filed: February 1, 2010
    Publication date: August 4, 2011
    Applicant: HERMES-EPITEK CORP.
    Inventors: BENSON CHAO, CHUNG-HUA FU, SHIH-CHIEH JANG
  • Patent number: 7846807
    Abstract: Ion Implantation is used to form the memristor material and electrode structure with memristance. First, numerous electron-rich element atoms are implanted into a layer made of transition metal or non-metal. Then, a treating process (such as annealing) is proceeded to expel some electron-rich element atoms away the layer. After that, some electron-rich element vacancy rich regions are formed inside the layer, and then a memristor material is formed. Significantly, the usage of ion implantation can precisely control and flexibly adjust the distribution of the implanted atoms, and then both the amount and distribution of these depleted regions can be effectively adjusted. Hence, the quality of the memristor material is improved.
    Type: Grant
    Filed: June 17, 2009
    Date of Patent: December 7, 2010
    Assignee: Hermes-Epitek Corp.
    Inventors: Daniel Tang, Hong Xiao