Abstract: System and method for charged particle beam. According an embodiment, the present invention provides a charged particle beam apparatus. The apparatus includes a charged particle source for generating a primary charged particle beam. The apparatus also includes at least one condenser lens for pre-focusing the primary charge particle beam. Furthermore, the apparatus includes a compound objective lens for forming the magnetic field and the electrostatic field to focus the primary charged particle beam onto a specimen in the charged particle beam path. The specimen includes a specimen surface. The compound objective lens includes a conical magnetic lens, an immersion magnetic lens, and an electrostatic lens, the conical magnetic lens including an upper pole piece, a shared pole piece being electrically insulated from the upper pole piece, and an excitation coil.

Abstract: A system and method for characterizing and charging a sample. The system includes a vacuum chamber, a first apparatus in the vacuum chamber and configured to characterize a sample, and a second apparatus in the vacuum chamber and configured to charge the sample. The second apparatus includes an electron gun configured to provide an electron beam to the sample and including an emission cathode biased to a first voltage relative to a reference voltage, a sample holder configured to support the sample, and a mesh located between the electron gun and the sample holder. Additionally, the second apparatus includes a first voltage supply configured to bias the mesh to a second voltage relative to the sample holder, and a second voltage supply configured to bias the sample holder to a third voltage relative to the reference voltage.

Abstract: An electron beam apparatus and method are presented for collecting side-view and plane-view SEM imagery. The electron beam apparatus includes an electron source, some intermediate lenses if needed, an objective lens and an in-lens sectional detector. The electron source will provide an electron beam. The intermediate lenses focus the electron beam further. The objective lens is a combination of an immersion magnetic lens and a retarding electrostatic lens focuses the electron beam onto the specimen surface. The in-lens detector will be divided into two or more sections to collect secondary electrons emanating from the specimen with different azimuth and polar angle so that side-view SEM imagery can be obtained.

Abstract: Method and apparatus for removing and neutralizing charges. The method includes loading a structure into a chamber. The structure includes a first surface and a plurality of charges away from the first surface. Additionally, the method includes supplying a first ionized gas to the first surface of the structure, and radiating the structure with a first ultraviolate light. The supplying a first ionized gas and the radiating the structure with a first ultraviolate light are performed simultaneously for a first period of time.

Abstract: A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations.

Abstract: A system and method for characterizing and charging a sample. The system includes a vacuum chamber, a first apparatus in the vacuum chamber and configured to characterize a sample, and a second apparatus in the vacuum chamber and configured to charge the sample. The second apparatus includes an electron gun configured to provide an electron beam to the sample and including an emission cathode biased to a first voltage relative to a reference voltage, a sample holder configured to support the sample, and a mesh located between the electron gun and the sample holder. Additionally, the second apparatus includes a first voltage supply configured to bias the mesh to a second voltage relative to the sample holder, and a second voltage supply configured to bias the sample holder to a third voltage relative to the reference voltage.

Abstract: A swinging objective retarding immersion lens system and method therefore which provide a low voltage electron beam with high beam current, relatively high spatial resolution, a relative large scan field, and high signal collection efficiency.

Abstract: Method and apparatus for removing and neutralizing charges. The method includes loading a structure into a chamber. The structure includes a first surface and a plurality of charges away from the first surface. Additionally, the method includes supplying a first ionized gas to the first surface of the structure, and radiating the structure with a first ultraviolate light. The supplying a first ionized gas and the radiating the structure with a first ultraviolate light are performed simultaneously for a first period of time.

Abstract: A method and system for determining process uniformity. The method includes selecting a plurality of sample regions. The plurality of sample regions includes a plurality of processed features, and each of the plurality of sample regions includes at least one of the plurality of processed features. Each of the plurality of processed features results from at least one fabrication process. Additionally, the method includes obtaining a plurality of electron microscope images associated with the plurality of sample regions respectively, processing information associated with the plurality of electron microscope images, and, determining a first plurality of grayscale values for the plurality of sample regions respectively. Moreover, the method includes processing information associated with the first plurality of grayscale values, and determining whether the at least one fabrication process is uniform.

Abstract: An apparatus and method for scanning the surface of a specimen is disclosed for defect inspection purposes. Scanning Electron Microscope (SEM) is used to scan the surface of a specimen. The scanning method employed by the SEM comprises the steps of: generating a particle beam from a particle beam emitter, and scanning the surface of the specimen by bending the particle beam at an angle with respect to the surface of the specimen, wherein the particle beam traverses an angle that is not parallel or perpendicular to the orientation of the specimen. The specimen being scanned is a semiconductor wafer or a photomask.

Abstract: An apparatus and method for scanning the surface of a specimen is disclosed for defect inspection purposes. Scanning Electron Microscope (SEM) is used to scan the surface of a specimen. The scanning method employed by the SEM comprises the steps of: generating a particle beam from a particle beam emitter, and scanning the surface of the specimen by deflecting the particle beam at an angle with respect to the surface of the specimen, wherein the particle beam traverses an angle that is not parallel or perpendicular to the orientation of the specimen. The specimen being scanned is a semiconductor wafer or a photo mask.

Abstract: A swinging objective retarding immersion lens system and method therefore which provide a low voltage electron beam with high beam current, relatively high spatial resolution, a relative large scan field, and high signal collection efficiency.

Abstract: A swinging objective retarding immersion lens system and method therefore which provide a low voltage electron beam with high beam current, relatively high spatial resolution, a relative large scan field, and high signal collection efficiency.